A full Ka-band power amplifier with 32.9% PAE and 15.3-dBm power in 65-nm CMOS H Jia, CC Prawoto, B Chi, Z Wang, CP Yue
IEEE Transactions on Circuits and Systems I: Regular Papers 65 (9), 2657-2668, 2018
165 2018 A 32.9% PAE, 15.3 dBm, 21.6–41.6 GHz power amplifier in 65nm CMOS using coupled resonators H Jia, CC Prawoto, B Chi, Z Wang, CP Yue
2016 IEEE Asian Solid-State Circuits Conference (A-SSCC), 345-348, 2016
26 2016 Control of hexagonal boron nitride dielectric thickness by single layer etching Z Ma, C Prawoto, Z Ahmed, Y Xiao, L Zhang, C Zhou, M Chan
Journal of Materials Chemistry C 7 (21), 6273-6278, 2019
23 2019 Ultralow- Y Xiao, Z Ma, C Prawoto, C Zhou, M Chan
IEEE Transactions on Electron Devices 67 (5), 2071-2075, 2020
10 2020 Interconnect technology with h-BN-capped air-gaps C Prawoto, Z Ma, Y Xiao, S Raju, C Zhou, M Chan
IEEE Electron Device Letters 40 (11), 1876-1879, 2019
8 2019 Air-gap technology with a large void-fraction for global interconnect delay reduction C Prawoto, Z Ma, Y Xiao, S Raju, M Chan
IEEE Transactions on Electron Devices 68 (10), 5078-5084, 2021
7 2021 Modeling of on-chip wireless power transmission system S Raju, CC Prawoto, M Chan, CP Yue
2015 IEEE International Wireless Symposium (IWS 2015), 1-4, 2015
6 2015 Prototyping of terahertz metasurface by one-step lithographically defined templating S Zhou, S Mu, S Raju, C Prawoto, X Ruan, K Ng, M Chan
IEEE Photonics Technology Letters 30 (10), 971-974, 2018
5 2018 Compact modeling of phase change memory with parameter extractions F Ding, X Li, Y Chen, Z Song, R Wang, CC Prawoto, M Chan, L Zhang, ...
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022
3 2022 High Frequency Monolithic Inductor with Air-Gaps C Prawoto, Z Ma, Y Xiao, S Raju, C Zhou, M Chan
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
2 2020 Current conduction mechanisms in h-BN as a dielectric material Z Ma, CC Prawoto, S Li, Z Ahmed, L Zhang, M Chan
2018 IEEE International Conference on Electron Devices and Solid State …, 2018
2 2018 Impact of CNT diameter distribution on CNT filled via scaling C Prawoto, S Li, M Chan
2018 IEEE International Conference on Electron Devices and Solid State …, 2018
2 2018 Influence of fin-width lateral variations of a FinFET CC Prawoto, M Cheralathan, M Chan
Proceedings of Technical Program-2014 International Symposium on VLSI …, 2014
2 2014 Low-loss RF passive elements by top-metal air-gap technology C Prawoto, Z Ma, Y Xiao, S Raju, C Zhou, M Chan
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022
1 2022 Integration of Carbon Nanotube as Via Contact to MoS2 Z Ma, Y Xiao, CC Prawoto, Z Ahmed, C Zhou, MS Chan
1 2019 Synthesis of Carbon Nanotube in Sub-100nm Vias on Ni Silicide Y Xiao, S Li, C Prawoto, M Chan
2018 IEEE International Conference on Electron Devices and Solid State …, 2018
1 2018 A design methodology of efficient on-chip wireless power transmission S Raju, CC Prawoto, M Chan, CP Yue
2017 International Symposium on VLSI Technology, Systems and Application …, 2017
1 2017 Hollow Airgap Technology for CMOS Maximum Interconnect Capacitance Reduction C Prawoto, Z Ma, Y Xiao, S Raju, M Chan
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit …, 2022
2022 IC structure with air gaps and protective layer and method for manufacturing the same R Salahuddin, MSJ Chan, CC Prawoto
US Patent 11,094,581, 2021
2021 A Generic Air-Gap Technology for Ultralow-k CMOS Interconnect CC Prawoto
PQDT-Global, 2021
2021 
Mansun ChanChair Professor, HKUSTEmail được xác minh tại ust.hk
