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304 2018 Method of gas-phase deposition by epitaxy D Dutartre, V Paredes-Saez
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273 2018 Vibratory beam electromechanical resonator T Skotnicki, D Dutartre, P Ribot
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180 2009 Excitonic photoluminescence from Si-capped strained D Dutartre, G Bremond, A Souifi, T Benyattou
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131 1991 Dielectric pockets-a new concept of the junctions for deca-nanometric CMOS devices M Jurczak, T Skotnicki, R Gwoziecki, M Paoli, B Tormen, P Ribot, ...
IEEE Transactions on Electron Devices 48 (8), 1770-1775, 2001
119 2001 50 nm-gate all around (GAA)-silicon on nothing (SON)-devices: A simple way to co-integration of GAA transistors within bulk MOSFET process S Monfray, T Skotnicki, Y Morand, S Descombes, P Coronel, P Mazoyer, ...
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
110 2002 230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications P Chevalier, C Fellous, L Rubaldo, F Pourchon, S Pruvost, R Beerkens, ...
IEEE journal of solid-state circuits 40 (10), 2025-2034, 2005
81 2005 A 150GHz f/sub T//f/sub max/0.13/spl mu/m SiGe: C BiCMOS technology Laurens, Martinet, Kermarrec, Campidelli, Deleglise, Dutarte, Troillard, ...
2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE …, 2003
80 2003 First 80 nm SON (silicon-on-nothing) MOSFETs with perfect morphology and high electrical performance S Monfray, T Skotnicki, Y Morand, S Descombes, M Paoli, P Ribot, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
79 2001 Highly performant double gate MOSFET realized with SON process S Harrison, P Coronel, F Leverd, R Cerutti, R Palla, D Delille, S Borel, ...
IEEE International Electron Devices Meeting 2003, 18.6. 1-18.6. 4, 2003
68 2003 16 nm planar NMOSFET manufacturable within state-of-the-art CMOS process thanks to specific design and optimisation F Boeuf, T Skotnicki, S Monfray, C Julien, D Dutartre, J Martins, P Mazoyer, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
68 2001 Process for fabricating a substrate of the silicon-on-insulator or silicon-on-nothing type and resulting device T Skotnicki, M Haond, D Dutartre
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67 2003 Emerging silicon-on-nothing (SON) devices technology S Monfray, T Skotnicki, C Fenouillet-Beranger, N Carriere, ...
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59 2004 Low temperature silicon and Si1− xGex epitaxy by rapid themal chemical vapour deposition using hydrides D Dutartre, P Warren, I Berbezier, P Perret
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58 1992 A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters S Jouan, R Planche, H Baudry, P Ribot, JA Chroboczek, D Dutartre, ...
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57 1999 0.13 μm SiGe BiCMOS technology for mm-wave applications G Avenier, P Chevalier, G Troillard, B Vandelle, F Brossard, L Depoyan, ...
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 89-92, 2008
55 2008 High performance 0.25/spl mu/m SiGe and SiGe: C HBTs using non selective epitaxy H Baudry, B Martinet, C Fellous, O Kermarrec, Y Campidelli, M Laurens, ...
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55 2001 SiGe HBTs featuring fT ≫400GHz at room temperature B Geynet, P Chevalier, B Vandelle, F Brossard, N Zerounian, M Buczko, ...
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 121-124, 2008
54 2008 