Theo dõi
Remis Gaska
Remis Gaska
UVTON, Inc.
Email được xác minh tại uvton.com - Trang chủ
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
Introduction to solid-state lighting
A Žukauskas, M Shur, R Gaska
(No Title), 2002
9962002
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%
M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ...
Applied Physics Express 5 (8), 082101, 2012
5392012
Nonresonant detection of terahertz radiation in field effect transistors
LCB W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, MS Shur ...
Journal of Applied Physics 91 (11), 9346-9353, 2002
5062002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor
MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur
IEEE Electron Device Letters 21 (2), 63-65, 2000
4902000
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
MA Khan, X Hu, A Tarakji, G Simin, J Yang, R Gaska, MS Shur
Applied Physics Letters 77 (9), 1339-1341, 2000
4312000
Self-heating in high-power AlGaN-GaN HFETs
R Gaska, A Osinsky, JW Yang, MS Shur
IEEE Electron Device Letters 19 (3), 89-91, 1998
3941998
Deep-ultraviolet light-emitting diodes
MS Shur, R Gaska
IEEE Transactions on electron devices 57 (1), 12-25, 2009
3882009
–metal–insulator–semiconductor heterostructure field–effect transistors
X Hu, A Koudymov, G Simin, J Yang, MA Khan, A Tarakji, MS Shur, ...
Applied Physics Letters 79 (17), 2832-2834, 2001
3312001
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
R Gaska, JW Yang, A Osinsky, Q Chen, MA Khan, AO Orlov, GL Snider, ...
Applied Physics Letters 72 (6), 707-709, 1998
3281998
Low noise p-π-n GaN ultraviolet photodetectors
A Osinsky, S Gangopadhyay, R Gaska, B Williams, MA Khan, ...
Applied Physics Letters 71 (16), 2334-2336, 1997
3211997
High-temperature performance of AlGaN/GaN HFETs on SiC substrates
R Gaska, Q Chen, J Yang, A Osinsky, MA Khan, MS Shur
IEEE Electron Device Letters 18 (10), 492-494, 1997
2891997
White light emitting device and method
A Zukauskas, R Gaska, M Shur
US Patent 7,095,056, 2006
2882006
Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate
X Hu, G Simin, J Yang, M Asif Khan, R Gaska, MS Shur
Electronics Letters 36 (8), 753-754, 2000
2692000
Electron mobility in modulation-doped AlGaN–GaN heterostructures
R Gaska, MS Shur, AD Bykhovski, AO Orlov, GL Snider
Applied physics letters 74 (2), 287-289, 1999
2461999
High power AlGaN ultraviolet light emitters
M Shatalov, W Sun, R Jain, A Lunev, X Hu, A Dobrinsky, Y Bilenko, ...
Semiconductor Science and Technology 29 (8), 084007, 2014
2192014
High-efficiency 269 nm emission deep ultraviolet light-emitting diodes
V Adivarahan, S Wu, JP Zhang, A Chitnis, M Shatalov, V Mandavilli, ...
Applied Physics Letters 84 (23), 4762-4764, 2004
2142004
Optimization of white polychromatic semiconductor lamps
A Žukauskas, R Vaicekauskas, F Ivanauskas, R Gaska, MS Shur
Applied Physics Letters 80 (2), 234-236, 2002
2092002
Visible-blind GaN Schottky barrier detectors grown on Si (111)
A Osinsky, S Gangopadhyay, JW Yang, R Gaska, D Kuksenkov, H Temkin, ...
Applied physics letters 72 (5), 551-553, 1998
2071998
Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells
E Kuokstis, JW Yang, G Simin, MA Khan, R Gaska, MS Shur
Applied Physics Letters 80 (6), 977-979, 2002
2002002
Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures
AV Muravjov, DB Veksler, VV Popov, OV Polischuk, N Pala, X Hu, ...
Applied Physics Letters 96 (4), 2010
1872010
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