Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization F Giannazzo, G Fisichella, G Greco, S Di Franco, I Deretzis, A La Magna, ...
ACS Applied Materials & Interfaces 9 (27), 23164-23174, 2017
99 2017 Nanoscale inhomogeneity of the Schottky barrier and resistivity in F Giannazzo, G Fisichella, A Piazza, S Agnello, F Roccaforte
Physical Review B 92 (8), 081307, 2015
90 2015 Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale G Fisichella, G Greco, F Roccaforte, F Giannazzo
Nanoscale 6 (15), 8671-8680, 2014
85 2014 Microscopic mechanisms of graphene electrolytic delamination from metal substrates G Fisichella, S Di Franco, F Roccaforte, S Ravesi, F Giannazzo
Applied Physics Letters 104 (23), 2014
65 2014 Graphene p-type doping and stability by thermal treatments in molecular oxygen controlled atmosphere A Piazza, F Giannazzo, G Buscarino, G Fisichella, AL Magna, ...
The Journal of Physical Chemistry C 119 (39), 22718-22723, 2015
54 2015 Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, ...
Beilstein journal of nanotechnology 8 (1), 254-263, 2017
53 2017 Graphene integration with nitride semiconductors for high power and high frequency electronics F Giannazzo, G Fisichella, G Greco, A La Magna, F Roccaforte, B Pecz, ...
physica status solidi (a) 214 (4), 1600460, 2017
51 2017 Micro-and nanoscale electrical characterization of large-area graphene transferred to functional substrates G Fisichella, S Di Franco, P Fiorenza, RL Nigro, F Roccaforte, C Tudisco, ...
Beilstein journal of nanotechnology 4 (1), 234-242, 2013
50 2013 Interface Electrical Properties of Al2 O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer G Fisichella, E Schiliro, S Di Franco, P Fiorenza, R Lo Nigro, F Roccaforte, ...
ACS applied materials & interfaces 9 (8), 7761-7771, 2017
48 2017 Effect of air on oxygen p‐doped graphene on SiO2 A Piazza, F Giannazzo, G Buscarino, G Fisichella, A La Magna, ...
physica status solidi (a) 213 (9), 2341-2344, 2016
35 2016 From Schottky to Ohmic graphene contacts to AlGaN/GaN heterostructures: Role of the AlGaN layer microstructure G Fisichella, G Greco, F Roccaforte, F Giannazzo
Applied Physics Letters 105 (6), 2014
33 2014 Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors F Giannazzo, G Fisichella, A Piazza, S Di Franco, G Greco, S Agnello, ...
physica status solidi (RRL)–Rapid Research Letters 10 (11), 797-801, 2016
29 2016 High permittivity cerium oxide thin films on AlGaN/GaN heterostructures P Fiorenza, G Greco, G Fisichella, F Roccaforte, G Malandrino, R Lo Nigro
Applied Physics Letters 103 (11), 2013
24 2013 Advances in the fabrication of graphene transistors on flexible substrates G Fisichella, SL Verso, S Di Marco, V Vinciguerra, E Schilirò, S Di Franco, ...
Beilstein Journal of Nanotechnology 8 (1), 467-474, 2017
23 2017 Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy F Giannazzo, I Deretzis, G Nicotra, G Fisichella, C Spinella, F Roccaforte, ...
Applied surface science 291, 53-57, 2014
22 2014 A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method RA Puglisi, S Caccamo, L D'Urso, G Fisichella, F Giannazzo, M Italia, ...
physica status solidi (a) 212 (8), 1685-1694, 2015
20 2015 High resolution study of structural and electronic properties of epitaxial graphene grown on off-axis 4H–SiC (0001) F Giannazzo, I Deretzis, G Nicotra, G Fisichella, QM Ramasse, C Spinella, ...
Journal of crystal growth 393, 150-155, 2014
20 2014 Substrate and atmosphere influence on oxygen p-doped graphene A Piazza, F Giannazzo, G Buscarino, G Fisichella, A La Magna, ...
Carbon 107, 696-704, 2016
18 2016 Fabrication and characterization of graphene heterostructures with nitride semiconductors for high frequency vertical transistors F Giannazzo, G Fisichella, G Greco, E Schilirò, I Deretzis, R Lo Nigro, ...
physica status solidi (a) 215 (10), 1700653, 2018
17 2018 Current injection from metal to MoS2 probed at nanoscale by conductive atomic force microscopy F Giannazzo, G Fisichella, A Piazza, S Di Franco, IP Oliveri, S Agnello, ...
Materials Science in Semiconductor Processing 42, 174-178, 2016
16 2016 