Theo dõi
Matthew T. Hardy
Matthew T. Hardy
Electronics Science and Technology Division, Naval Research Laboratory
Email được xác minh tại nrl.navy.mil
Tiêu đề
Trích dẫn bởi
Trích dẫn bởi
Năm
High-resolution electrohydrodynamic jet printing
JU Park, M Hardy, SJ Kang, K Barton, K Adair, DK Mukhopadhyay, ...
Nature materials 6 (10), 782-789, 2007
17332007
Superluminescent diodes by crystallographic etching
MT Hardy, YD Lin, H Ohta, SP DenBaars, JS Speck, S Nakamura, ...
US Patent App. 12/913,638, 2011
2582011
Group III-nitride lasers: a materials perspective
MT Hardy, DF Feezell, SP DenBaars, S Nakamura
Materials Today 14 (9), 408-415, 2011
1972011
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer
Applied Physics Letters 110 (16), 2017
1572017
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm
A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...
1192010
Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate
YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ...
Applied physics express 2 (8), 082102, 2009
812009
444.9 nm semipolar (112¯ 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
P Shan Hsu, MT Hardy, F Wu, I Koslow, EC Young, AE Romanov, K Fujito, ...
Applied Physics Letters 100 (2), 2012
782012
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy
MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ...
Applied Physics Express 13 (6), 065509, 2020
682020
Performance and polarization effects in (112 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
IL Koslow, MT Hardy, P Shan Hsu, PY Dang, F Wu, A Romanov, YR Wu, ...
Applied Physics Letters 101 (12), 2012
652012
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
MT Hardy, CO Holder, DF Feezell, S Nakamura, JS Speck, DA Cohen, ...
Applied Physics Letters 103 (8), 2013
632013
Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates
DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ...
IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016
622016
Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding
KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ...
Applied Physics Express 2 (7), 071003, 2009
602009
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates
DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ...
Applied Physics Express 8 (8), 085501, 2015
562015
Stress relaxation and critical thickness for misfit dislocation formation in (10-10) and (30-3-1) InGaN/GaN heteroepitaxy
PS Hsu, MT Hardy, EC Young, AE Romanov, SP DenBaars, S Nakamura, ...
APPLIED PHYSICS LETTERS 100, 171917, 2012
562012
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy
N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ...
Journal of Vacuum Science & Technology A 38 (6), 2020
542020
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202 1) GaN substrates
A Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, ...
Applied Physics Letters 103 (15), 2013
532013
Epitaxial ScAlN etch-stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN
MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm, DS Katzer
IEEE Transactions on Semiconductor Manufacturing 30 (4), 475-479, 2017
522017
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021) InGaN/GaN quantum wells
CY Huang, MT Hardy, K Fujito, DF Feezell, JS Speck, SP DenBaars, ...
Applied Physics Letters 99 (24), 2011
522011
Trace analysis of non-basal plane misfit stress relaxation in (20-21) and (30-3-1) semipolar InGaN/GaN heterostructures
MT Hardy, PS Hsu, F Wu, IL Koslow, EC Young, S Nakamura, ...
Applied Physics Letters 100 (20), 202103-202103-4, 2012
512012
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates
DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ...
Journal of Crystal Growth 456, 121-132, 2016
482016
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