Truy cập công khai

Test of the fluctuation theorem for single-electron transport

B Küng, C Rössler, M Beck, M Marthaler, DS Golubev, Y Utsumi, T Ihn, ...

Journal of Applied Physics 113 (13), 2013

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Có tại một số nơi: 38

Magneto-transport controlled by Landau polariton states

GL Paravicini-Bagliani, F Appugliese, E Richter, F Valmorra, J Keller, ...

Nature Physics 15 (2), 186-190, 2019

Các cơ quan ủy nhiệm: Swiss National Science Foundation, European Commission

[PDF] aps.org

Irreversibility on the level of single-electron tunneling

B Küng, C Rössler, M Beck, M Marthaler, DS Golubev, Y Utsumi, T Ihn, ...

Physical Review X 2 (1), 011001, 2012

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Transport properties of clean quantum point contacts

C Rössler, S Baer, E De Wiljes, PL Ardelt, T Ihn, K Ensslin, C Reichl, ...

New Journal of Physics 13 (11), 113006, 2011

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Experimental probe of topological orders and edge excitations in the second Landau level

S Baer, C Rössler, T Ihn, K Ensslin, C Reichl, W Wegscheider

Physical Review B 90 (7), 075403, 2014

Các cơ quan ủy nhiệm: Swiss National Science Foundation

[PDF] aps.org

Imaging the conductance of integer and fractional quantum Hall edge states

N Pascher, C Rössler, T Ihn, K Ensslin, C Reichl, W Wegscheider

Physical Review X 4 (1), 011014, 2014

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Measurement back-action in stacked graphene quantum dots

D Bischoff, M Eich, O Zilberberg, C Rossler, T Ihn, K Ensslin

Nano letters 15 (9), 6003-6008, 2015

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Measuring the Degeneracy of Discrete Energy Levels Using a Quantum Dot

A Hofmann, VF Maisi, C Gold, T Krähenmann, C Rössler, J Basset, ...

Physical review letters 117 (20), 206803, 2016

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Interference of electrons in backscattering through a quantum point contact

AA Kozikov, C Rössler, T Ihn, K Ensslin, C Reichl, W Wegscheider

New Journal of Physics 15 (1), 013056, 2013

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Transport spectroscopy of a spin-coherent dot-cavity system

C Rössler, D Oehri, O Zilberberg, G Blatter, M Karalic, J Pijnenburg, ...

Physical review letters 115 (16), 166603, 2015

Các cơ quan ủy nhiệm: Swiss National Science Foundation

[HTML] wiley.com

2D linear trap array for quantum information processing

PC Holz, S Auchter, G Stocker, M Valentini, K Lakhmanskiy, C Rössler, ...

Advanced Quantum Technologies 3 (11), 2000031, 2020

Các cơ quan ủy nhiệm: Austrian Science Fund, European Commission

[PDF] iop.org

Increasing the ν= 5/2 gap energy: an analysis of MBE growth parameters

C Reichl, J Chen, S Baer, C Rössler, T Ihn, K Ensslin, W Dietsche, ...

New Journal of Physics 16 (2), 023014, 2014

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Interplay of fractional quantum Hall states and localization in quantum point contacts

S Baer, C Rössler, EC de Wiljes, PL Ardelt, T Ihn, K Ensslin, C Reichl, ...

Physical Review B 89 (8), 085424, 2014

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Equilibrium free energy measurement of a confined electron driven out of equilibrium

A Hofmann, VF Maisi, C Rössler, J Basset, T Krähenmann, P Märki, T Ihn, ...

Physical Review B 93 (3), 035425, 2016

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Imaging the lateral shift of a quantum point contact using scanning gate microscopy

S Schnez, C Rössler, T Ihn, K Ensslin, C Reichl, W Wegscheider

Physical Review B—Condensed Matter and Materials Physics 84 (19), 195322, 2011

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Dynamic photoconductive gain effect in shallow-etched AlGaAs/GaAs quantum wires

KD Hof, C Rossler, S Manus, JP Kotthaus, AW Holleitner, D Schuh, ...

Physical Review B—Condensed Matter and Materials Physics 78 (11), 115325, 2008

Các cơ quan ủy nhiệm: German Research Foundation

Imaging magnetoelectric subbands in ballistic constrictions

AA Kozikov, D Weinmann, C Rössler, T Ihn, K Ensslin, C Reichl, ...

New Journal of Physics 15 (8), 083005, 2013

Các cơ quan ủy nhiệm: Swiss National Science Foundation

Optically induced transport properties of freely suspended semiconductor submicron channels

C Rossler, KD Hof, S Manus, S Ludwig, JP Kotthaus, J Simon, ...

Applied Physics Letters 93 (7), 2008

Các cơ quan ủy nhiệm: German Research Foundation

Industrially microfabricated ion trap with 1 eV trap depth

S Auchter, C Axline, C Decaroli, M Valentini, L Purwin, R Oswald, R Matt, ...

Quantum Science and Technology 7 (3), 035015, 2022

Các cơ quan ủy nhiệm: European Commission

[PDF] uni-muenchen.de