Gallium nitride-based complementary logic integrated circuits Z Zheng, L Zhang, W Song, S Feng, H Xu, J Sun, S Yang, T Chen, J Wei, ...
Nature Electronics 4 (8), 595-603, 2021
220 2021 High Z Zheng, W Song, L Zhang, S Yang, J Wei, KJ Chen
IEEE Electron Device Letters 41 (1), 26-29, 2019
124 2019 p -GaN Gate HEMT With Surface Reinforcement for Enhanced Gate ReliabilityL Zhang, Z Zheng, S Yang, W Song, J He, KJ Chen
IEEE Electron Device Letters 42 (1), 22-25, 2020
87 2020 Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy S Yang, S Huang, J Wei, Z Zheng, Y Wang, J He, KJ Chen
IEEE Electron Device Letters 41 (5), 685-688, 2020
78 2020 650-V double-channel lateral Schottky barrier diode with dual-recess gated anode J Lei, J Wei, G Tang, Z Zhang, Q Qian, Z Zheng, M Hua, KJ Chen
IEEE Electron Device Letters 39 (2), 260-263, 2017
78 2017 OFF-State Drain-Voltage-Stress-Induced V TH Instability in Schottky-Type p-GaN Gate HEMTs J Chen, M Hua, J Wei, J He, C Wang, Z Zheng, KJ Chen
IEEE Journal of Emerging and Selected Topics in Power Electronics 9 (3 …, 2020
75 2020 E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs C Wang, M Hua, J Chen, S Yang, Z Zheng, J Wei, L Zhang, KJ Chen
IEEE Electron Device Letters 41 (4), 545-548, 2020
70 2020 Planar GaN Power Integration–The World is Flat KJ Chen, J Wei, G Tang, H Xu, Z Zheng, L Zhang, W Song
2020 IEEE International Electron Devices Meeting (IEDM), 27.1. 1-27.1. 4, 2020
64 2020 Short Circuit Capability and Short Circuit Induced J Sun, J Wei, Z Zheng, Y Wang, KJ Chen
IEEE Journal of Emerging and Selected Topics in Power Electronics 7 (3 …, 2019
59 2019 Monolithically Integrated GaN Ring Oscillator Based on High-Performance Complementary Logic Inverters Z Zheng, W Song, L Zhang, S Yang, J Wei, KJ Chen
IEEE Electron Device Letters 42 (1), 26-29, 2020
52 2020 Dependence of M Hua, J Wei, Q Bao, Z Zhang, Z Zheng, KJ Chen
IEEE Electron Device Letters 39 (3), 413-416, 2018
47 2018 Incorporating the Dynamic Threshold Voltage Into the SPICE Model of Schottky-Type p -GaN Gate Power HEMTs H Xu, J Wei, R Xie, Z Zheng, J He, KJ Chen
IEEE Transactions on Power Electronics 36 (5), 5904-5914, 2020
45 2020 GaN power integration technology and its future prospects J Wei, Z Zheng, G Tang, H Xu, G Lyu, L Zhang, J Chen, M Hua, S Feng, ...
IEEE Transactions on Electron Devices 71 (3), 1365-1382, 2023
44 2023 An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps Y Wu, J Wei, M Wang, M Nuo, J Yang, W Lin, Z Zheng, L Zhang, M Hua, ...
IEEE Electron Device Letters 44 (1), 25-28, 2022
44 2022 Short Circuit Capability Characterization and Analysis of p -GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests J Sun, J Wei, Z Zheng, KJ Chen
IEEE Transactions on Industrial Electronics 68 (9), 8798-8807, 2020
43 2020 2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current Q Qian, J Lei, J Wei, Z Zhang, G Tang, K Zhong, Z Zheng, KJ Chen
npj 2D Materials and Applications 3 (1), 24, 2019
42 2019 E-mode p-GaN Gate HEMT with p-FET Bridge for Higher VTH and Enhanced VTH Stability M Hua, J Chen, C Wang, L Liu, L Li, J Zhao, Z Jiang, J Wei, L Zhang, ...
2020 IEEE International Electron Devices Meeting (IEDM), 23.1. 1-23.1. 4, 2020
38 2020 A Normally-off Copackaged SiC-JFET/GaN-HEMT Cascode Device for High-Voltage and High-Frequency Applications G Lyu, Y Wang, J Wei, Z Zheng, J Sun, L Zhang, KJ Chen
IEEE Transactions on Power Electronics 35 (9), 9669-9679, 2020
38 2020 RF Linearity Enhancement of GaN-on-Si HEMTs With a Closely Coupled Double-Channel Structure W Song, Z Zheng, T Chen, J Wei, L Yuan, KJ Chen
IEEE Electron Device Letters 42 (8), 1116-1119, 2021
37 2021 Dynamic OFF-State Current (Dynamic Y Wang, M Hua, G Tang, J Lei, Z Zheng, J Wei, KJ Chen
IEEE Electron Device Letters 39 (9), 1366-1369, 2018
37 2018 
Kevin J. ChenHong Kong University of Science and TechnologyEmail được xác minh tại ust.hk