Các bài viết có thể truy cập công khai - Michael ShurTìm hiểu thêm
Không có ở bất kỳ nơi nào: 54
High current-induced degradation of AlGaN ultraviolet light emitting diodes
A Pinos, S Marcinkevičius, MS Shur
Journal of Applied Physics 109 (10), 2011
Các cơ quan ủy nhiệm: Swedish Research Council
A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc …
P Siddiqua, WA Hadi, MS Shur, SK O’Leary
Journal of Materials Science: Materials in Electronics 26, 4475-4512, 2015
Các cơ quan ủy nhiệm: Natural Sciences and Engineering Research Council of Canada
Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices
IA Gayduchenko, GE Fedorov, MV Moskotin, DI Yagodkin, SV Seliverstov, ...
Nanotechnology 29 (24), 245204, 2018
Các cơ quan ủy nhiệm: US Department of Defense
Compact terahertz SPICE model: Effects of drude inductance and leakage
X Liu, K Dovidenko, J Park, T Ytterdal, MS Shur
IEEE Transactions on Electron Devices 65 (12), 5350-5356, 2018
Các cơ quan ủy nhiệm: US Department of Defense
Terahertz beam testing of millimeter wave monolithic integrated circuits
SL Rumyantsev, A Muraviev, S Rudin, G Rupper, M Reed, J Suarez, ...
IEEE Sensors Journal 17 (17), 5487-5491, 2017
Các cơ quan ủy nhiệm: US National Science Foundation, US Department of Defense
Cubic boron nitride as a material for future electron device applications: A comparative analysis
J Chilleri, P Siddiqua, MS Shur, SK O'Leary
Applied Physics Letters 120 (12), 2022
Các cơ quan ủy nhiệm: US Department of Defense, Natural Sciences and Engineering Research Council …
Homodyne phase sensitive terahertz spectrometer
S Rumyantsev, X Liu, V Kachorovskii, M Shur
Applied Physics Letters 111 (12), 2017
Các cơ quan ủy nhiệm: US Department of Defense
Electrical modulation of terahertz radiation using graphene-phosphorene heterostructures
V Ryzhii, T Otsuji, M Ryzhii, DS Ponomarev, VE Karasik, VG Leiman, ...
Semiconductor Science and Technology 33 (12), 124010, 2018
Các cơ quan ủy nhiệm: US Department of Defense
Wide band gap semiconductors. Good results and great expectations
MS Shur, MA Khan
Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium …, 2020
Các cơ quan ủy nhiệm: US Department of Defense
Optical pumping in graphene-based terahertz/far-infrared superluminescent and laser heterostructures with graded-gap black-PxAs1−x absorbing-cooling layers
MY Morozov, VG Leiman, VV Popov, V Mitin, MS Shur, VE Karasik, ...
Optical Engineering 59 (6), 061606-061606, 2020
Các cơ quan ủy nhiệm: US Department of Defense
Detection and mixing of terahertz radiation by two dimensional electronic fluid
MI Dyakonov, MS Shur
Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium …, 2020
Các cơ quan ủy nhiệm: US Department of Defense
Electron transport within bulk cubic boron nitride: A Monte Carlo simulation analysis
P Siddiqua, MS Shur, SK O’Leary
Journal of Applied Physics 128 (18), 2020
Các cơ quan ủy nhiệm: US Department of Defense, Natural Sciences and Engineering Research Council …
Plasmonic detectors and sources for THz communication and sensing
M Shur
Micro-and Nanotechnology Sensors, Systems, and Applications X 10639, 357-366, 2018
Các cơ quan ủy nhiệm: US Department of Defense
Subterahertz and terahertz sensing of biological objects and chemical agents
M Shur
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and …, 2018
Các cơ quan ủy nhiệm: US Department of Defense
A low-field electron mobility analysis of cubic boron nitride
J Chilleri, Y Wang, MS Shur, SK O’Leary
Solid State Communications 352, 114776, 2022
Các cơ quan ủy nhiệm: US Department of Defense, Natural Sciences and Engineering Research Council …
Sub-terahertz FET detector with self-assembled Sn-nanothreads
DS Ponomarev, DV Lavrukhin, AE Yachmenev, RA Khabibullin, ...
Journal of Physics D: Applied Physics 53 (7), 075102, 2019
Các cơ quan ủy nhiệm: US Department of Defense
Compact Design Models of Cryo and Room Temperature Si MOS, GaN, InGaAs, and p-diamond HEMT TeraFETs
M Shur, J Mikalopas, GR Aizin
2020 IEEE Radio and Wireless Symposium (RWS), 209-212, 2020
Các cơ quan ủy nhiệm: US Department of Defense
Frequency to digital conversion using Si TeraFETs
X Liu, T Ytterdal, M Shur
Optical Engineering 60 (8), 082017-082017, 2021
Các cơ quan ủy nhiệm: US Department of Defense
AI powered THz testing technology for ensuring hardware cybersecurity
N Akter, M Karabiyik, A Wright, M Shur, N Pala
2020 IEEE Research and Applications of Photonics in Defense Conference …, 2020
Các cơ quan ủy nhiệm: US Department of Defense
THz photonic and plasmonic devices for sensing and communication applications
N Pala, M Shur
Micro-and Nanotechnology Sensors, Systems, and Applications XI 10982, 478-483, 2019
Các cơ quan ủy nhiệm: US Department of Defense
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