| Sphericity and roundness computation for particles using the extreme vertices model I Cruz-Matías, D Ayala, D Hiller, S Gutsch, M Zacharias, S Estradé, F Peiró Journal of computational science 30, 28-40, 2019 | 148 | 2019 |
| Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices AM Hartel, D Hiller, S Gutsch, P Löper, S Estradé, F Peiró, B Garrido, ... Thin Solid Films 520 (1), 121-125, 2011 | 148 | 2011 |
| Fundamental temperature-dependent properties of the Si nanocrystal band gap AM Hartel, S Gutsch, D Hiller, M Zacharias Physical Review B—Condensed Matter and Materials Physics 85 (16), 165306, 2012 | 103 | 2012 |
| Charge transport in Si nanocrystal/SiO2 superlattices S Gutsch, J Laube, AM Hartel, D Hiller, N Zakharov, P Werner, ... Journal of Applied Physics 113 (13), 2013 | 82 | 2013 |
| Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography H Gnaser, S Gutsch, M Wahl, R Schiller, M Kopnarski, D Hiller, ... Journal of Applied Physics 115 (3), 2014 | 80 | 2014 |
| Location and Electronic Nature of Phosphorus in the Si Nanocrystal − SiO2 System D König, S Gutsch, H Gnaser, M Wahl, M Kopnarski, J Göttlicher, ... Scientific reports 5 (1), 9702, 2015 | 77 | 2015 |
| Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals D Hiller, A Zelenina, S Gutsch, SA Dyakov, L López-Conesa, ... Journal of Applied Physics 115 (20), 2014 | 62 | 2014 |
| Intrinsic nonradiative recombination in ensembles of silicon nanocrystals AM Hartel, S Gutsch, D Hiller, M Zacharias Physical Review B—Condensed Matter and Materials Physics 87 (3), 035428, 2013 | 57 | 2013 |
| Modulation doping of silicon using aluminium-induced acceptor states in silicon dioxide D König, D Hiller, S Gutsch, M Zacharias, S Smith Scientific reports 7 (1), 46703, 2017 | 54 | 2017 |
| Determining the crystalline degree of silicon nanoclusters/SiO2 multilayers by Raman scattering S Hernández, J López-Vidrier, L López-Conesa, D Hiller, S Gutsch, ... Journal of Applied Physics 115 (20), 2014 | 51 | 2014 |
| Defect-induced luminescence quenching vs. charge carrier generation of phosphorus incorporated in silicon nanocrystals as function of size D Hiller, J López-Vidrier, S Gutsch, M Zacharias, K Nomoto, D König Scientific Reports 7 (1), 863, 2017 | 50 | 2017 |
| Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing J Laube, D Nübling, H Beh, S Gutsch, D Hiller, M Zacharias Thin Solid Films 603, 377-381, 2016 | 50 | 2016 |
| Doping efficiency of phosphorus doped silicon nanocrystals embedded in a SiO2 matrix S Gutsch, AM Hartel, D Hiller, N Zakharov, P Werner, M Zacharias Applied Physics Letters 100 (23), 2012 | 48 | 2012 |
| Effects of inter-nanocrystal distance on luminescence quantum yield in ensembles of Si nanocrystals J Valenta, M Greben, S Gutsch, D Hiller, M Zacharias Applied Physics Letters 105 (24), 2014 | 47 | 2014 |
| Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift A Zelenina, SA Dyakov, D Hiller, S Gutsch, V Trouillet, M Bruns, ... Journal of Applied Physics 114 (18), 2013 | 45 | 2013 |
| Energy offset between silicon quantum structures: interface impact of embedding dielectrics as doping alternative D König, D Hiller, S Gutsch, M Zacharias Advanced Materials Interfaces 1 (9), 1400359, 2014 | 43 | 2014 |
| Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2 S Gutsch, J Laube, D Hiller, W Bock, M Wahl, M Kopnarski, H Gnaser, ... Applied Physics Letters 106 (11), 2015 | 42 | 2015 |
| Charge transport and electroluminescence of silicon nanocrystals/SiO2 superlattices J López-Vidrier, Y Berencén, S Hernández, O Blázquez, S Gutsch, ... Journal of Applied Physics 114 (16), 2013 | 41 | 2013 |
| Determination of absorption cross-section of Si nanocrystals by two independent methods based on either absorption or luminescence J Valenta, M Greben, Z Remeš, S Gutsch, D Hiller, M Zacharias Applied Physics Letters 108 (2), 2016 | 40 | 2016 |
| Boron-Incorporating Silicon Nanocrystals Embedded in SiO2: Absence of Free Carriers vs. B-Induced Defects D Hiller, J López-Vidrier, S Gutsch, M Zacharias, M Wahl, W Bock, ... Scientific Reports 7 (1), 8337, 2017 | 39 | 2017 |
Margit ZachariasProfessor of Nanotechnology, Albert Ludwigs University FreiburgEmail được xác minh tại imtek.de
