| A Study of GaAs1–xSbx Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors S Nalamati, M Sharma, P Deshmukh, J Kronz, R Lavelle, D Snyder, ... ACS Applied Nano Materials 2 (7), 4528-4537, 2019 | 34 | 2019 |
| Molecular beam epitaxial growth of GaAsSb/GaAsSbN/GaAlAs core-multishell nanowires for near-infrared applications P Deshmukh, J Li, S Nalamati, M Sharma, S Iyer Nanotechnology 30 (27), 275203, 2019 | 31 | 2019 |
| Effects of annealing on GaAs/GaAsSbN/GaAs core-multi-shell nanowires P Kasanaboina, M Sharma, P Deshmukh, CL Reynolds, Y Liu, S Iyer Nanoscale research letters 11, 1-6, 2016 | 29 | 2016 |
| Molecular beam epitaxial growth of high quality Ga-catalyzed GaAs1–xSbx (x> 0.8) nanowires on Si (111) with photoluminescence emission reaching 1.7 μm P Deshmukh, M Sharma, S Nalamati, CL Reynolds, Y Liu, S Iyer Semiconductor Science and Technology 33 (12), 125007, 2018 | 23 | 2018 |
| Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy M Sharma, P Deshmukh, P Kasanaboina, CL Reynolds, Y Liu, S Iyer Semiconductor Science and Technology 32 (12), 125003, 2017 | 17 | 2017 |
| High sb concentration GaAsSb/GaAs (1-x) SbxN/GaAlAs core-shell-shell nanowires S Iyer, J Li, P Deshmukh, M Sharma US Patent 11,905,622, 2024 | 1 | 2024 |
| GaAsSb (N) Nanowires for Short Wavelength Infrared Photodetectors PR Deshmukh North Carolina Agricultural and Technical State University, 2019 | 1 | 2019 |
| High Sb concentration GaAsSb/GaAs (1-x) SbxN/GaAlAs core-shell-shell nanowires S Iyer, J Li, P Deshmukh, M Sharma US Patent 12,221,719, 2025 | | 2025 |
Shanthi Iyer alias E.ShanthiProfessor, Nanoengineering, Joint School of Nanoscience and NanoengineeringПідтверджена електронна адреса в ncat.edu