| Is SOI CMOS a promising technology for SOCs in high frequency range? C Raynaud, F Gianesello, C Tinella, P Flatresse, R Gwoziecki, P Touret, ... ECS Meeting Abstracts, 571, 2006 | 32 | 2006 |
| A 7-dB 43-GHz CMOS distributed amplifier on high-resistivity SOI substrates C Pavageau, MS Moussa, JP Raskin, D Vanhoenaker-Janvier, N Fel, ... IEEE transactions on microwave theory and techniques 56 (3), 587-598, 2008 | 24 | 2008 |
| Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences millimétriques C Pavageau Université des Sciences et Technologie de Lille-Lille I, 2005 | 14 | 2005 |
| Behaviour of TFMS and CPW line on SOI substrate versus high temperature for RF applications MS Moussa, C Pavageau, D Lederer, L Picheta, F Danneville, N Fel, ... Solid-state electronics 50 (11-12), 1822-1827, 2006 | 13 | 2006 |
| Low power 23-Ghz and 27-Ghz distributed cascode amplifiers in a standard 130nm SOI CMOS process C Pavageau, A Siligaris, L Picheta, F Danneville, MS Moussa, JP Raskin, ... IEEE MTT-S International Microwave Symposium Digest, 2005., 2243-2246, 2005 | 9 | 2005 |
| A 60-GHz LNA and a 92-GHz low-power distributed amplifier in CMOS with above-IC C Pavageau, O Dupuis, M Dehan, B Parvais, G Carchon, W De Raedt 2008 European Microwave Integrated Circuit Conference, 250-253, 2008 | 8 | 2008 |
| Center balanced distributed ESD protection for 1–110 GHz distributed amplifier in 45 nm CMOS technology S Thijs, D Linten, C Pavageau, M Scholz, G Groeseneken 2009 31st EOS/ESD Symposium, 1-6, 2009 | 5 | 2009 |
| Temperature effect on the performance of a traveling wave amplifier in 130 nm SOI technology MS Moussa, C Pavageau, F Danneville, J Russat, N Fel, JP Raskin, ... 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium-Digest of …, 2005 | 5 | 2005 |
| Low-cost CMOS-based receive modules for 60 GHz wireless communication P Wambacq, K Raczkowski, V Ramon, A Vasylchenko, A Enayati, ... 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, 1-4, 2009 | 4 | 2009 |
| Design of a distributed oscillator in 130 nm SOI MOS technology MS Moussa, C Pavageau, L Picheta, F Danneville, J Russat, N Fel, ... 2006 European Microwave Conference, 1526-1529, 2006 | 4 | 2006 |
| An investigation of temperature effects on CPW and MSL on SOI substrate for RF applications MS Moussa, C Pavageau, D Lederer, L Picheta, F Danneville, J Russat, ... 2005 IEEE International SOI Conference Proceedings, 70-71, 2005 | 4 | 2005 |
| GaN-on-Porous Silicon for RF applications G Scheen, R Tuyaerts, P Cardinael, E Ekoga, K Aouadi, C Pavageau, ... 2023 53rd European Microwave Conference (EuMC), 842-845, 2023 | 2 | 2023 |
| Mems fixed capacitor comprising a gas-containing gap and process for manufacturing said capacitor C Pavageau US Patent App. 14/436,274, 2015 | 2 | 2015 |
| RF MEMS crosspoint switch and crosspoint switch matrix comprising RF MEMS crosspoint switches C Pavageau US Patent 9,048,523, 2015 | 2 | 2015 |
| Behavior of a traveling-wave amplifier versus temperature in SOI technology MS Moussa, C Pavageau, P Simon, F Danneville, J Russat, N Fel, ... IEEE transactions on microwave theory and techniques 54 (6), 2675-2683, 2006 | 2 | 2006 |
| Utilization of tunable components for 4G frequency reconfigurable mobile terminal antenna A Cihangir, F Ferrero, C Luxey, G Jacquemod, A Reinhardt, L Dussopt, ... 2014 International Workshop on Antenna Technology: Small Antennas, Novel EM …, 2014 | 1 | 2014 |
| An approach of rf-mems technology platform for multi-band multi-mode handsets C Pavageau, O Millet, A Cao DelfMEMS, Villeneuve-d'Ascq, France, 2011 | 1 | 2011 |
| Forced OFF-state for switching reliability of low actuation voltage RF MEMS electrostatic switch N Lorphelin, AS Rollier, S Touati, C Pavageau, R Robin, A Kanciurzewski, ... MEMSWave conference, 2010 | 1 | 2010 |
| Design of distributed amplifiers and oscillators in 130 nm SOI MOS technology MS Moussa, C Pavageau, L Picheta, F Danneville, J Russat, N Fel, ... Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated …, 2006 | 1 | 2006 |
| An investigation of high temperature effects on CPW and MSL on SOI substrate for RF applications M Si Moussa, C Pavageau, D Lederer, L Picheta, F Danneville, JP Raskin, ... Solid-State Electronics 50, 1822, 2006 | 1 | 2006 |
