Study and analysis of the effects of SiGe source and pocket-doped channel on sensing performance of dielectrically modulated tunnel FET-based biosensors S Kanungo, S Chattopadhyay, PS Gupta, K Sinha, H Rahaman IEEE Transactions on Electron Devices 63 (6), 2589-2596, 2016 | 201 | 2016 |
A device simulation-based investigation on dielectrically modulated fringing field-effect transistor for biosensing applications S Kanungo, S Chattopadhyay, K Sinha, PS Gupta, H Rahaman IEEE Sensors Journal 17 (5), 1399-1406, 2016 | 31 | 2016 |
Surface engineering of solar glass covers for soiling related issues by applying electrodynamic screens (EDS) RB Shoubhik De, Manish Kumar, Silajit Manna, Sugato Ghosh, Kunal Sinha ... Surfaces and Interfaces 25, 101222, 2021 | 21 | 2021 |
An optoelectronic band-to-band tunnel transistor for near-infrared sensing applications: Device physics, modeling, and simulation PS Gupta, H Rahaman, K Sinha, S Chattopadhyay Journal of Applied Physics 120 (8), 2016 | 15 | 2016 |
A technique to incorporate both tensile and compressive channel stress in Ge FinFET architecture K Sinha, S Chattopadhyay, PS Gupta, H Rahaman Journal of Computational Electronics 16, 620-630, 2017 | 12 | 2017 |
An extremely low sub-threshold swing UTB SOI tunnel-FET structure suitable for low-power applications PS Gupta, S Kanungo, H Rahaman, K Sinha, PS Dasgupta International Journal of Applied Physics and Mathematics 2 (4), 240, 2012 | 9 | 2012 |
Investigation of Process Induced Stress in the Channel of a SiGe Embedded Source/Drain Ge- FinFET Architecture K Sinha, S Chattopadhyay, H Rahaman International Symposium on Devices, Circuits and Systems, 2018 | 5 | 2018 |
A study on the performance of stress induced p-channel MOSFETs with embeded Si1−xGexsource/drain K Sinha, H Rahaman, S Chattopadhyay 2012 5th International Conference on Computers and Devices for Communication …, 2012 | 3 | 2012 |
Strain engineering in modern field effect transistors K Sinha Electrical and Electronic Devices, Circuits, and Materials: Technological …, 2021 | 2 | 2021 |
Incorporation of Tensile and Compressive channel Stress by Modulating SiGe Stressor length in Embedded Source/Drain Si-FinFET Architecture K Sinha, PS Gupta, C Sanatan, H Rahaman 2018 IEEE Electron Device Kolkata Conference, 2018 | 2 | 2018 |
Investigation of the Impact of Embedded SiGe Source/Drain Induced Uniaxial Stress on the Performance of Si p-channel 3D FinFETs K Sinha, H Rahaman, S Chattopadhyay 6th International Conference on Computers and Devices for Comminication …, 2015 | 2 | 2015 |
Investigating the performance of SiGe embedded dual source p-FinFET architecture K Sinha, PS Gupta, S Chattopadhyay, H Rahaman Superlattices and Microstructures 98, 37-45, 2016 | 1 | 2016 |
Three Dimensional Process Induced Stress in Nano-scale MOSFET using Embedded Source/Drain Technology K Sinha International Conference on Advanced Materials and Energy Technology (ICAMET …, 2014 | 1 | 2014 |
Growth of Nano‐Wire Field Effect Transistor in 21 st Century K Sinha Nanodevices for Integrated Circuit Design, 1-21, 2023 | | 2023 |
Evolution of Nanoscale Transistors: From Planner MOSFET to 2D-Material-Based Field-Effect Transistors K Sinha Nanotechnology, 119-135, 2022 | | 2022 |
Performance-Aware Stress Engineering in Nano-scaled FETs with Embedded SiGe Source and Drain K Sinha Lap-Lambert Academic Publishing, 2019 | | 2019 |
Method to Analyze Channel Stress in Ge FinFET Architecture and architecture thereof K Sinha, PS Gupta, C Sanatan, H Rahaman IN Patent 544,833, 2018 | | 2018 |
A Study on the Performance of Strained Channel Dual Source Field Effect Transistor for Bio-Sensing Application K Sinha, S Chattopadhyay, H Rahaman Two Days National Conference on Advances in Interdisciplinary Sciences, 2017 | | 2017 |
STRAINED SILICON – A GATEWAY TO A FASTER WORLD K Sinha, H Rahaman, S Chattopadhyay National Conference on Advancement in Frontier Physics: From 20th century to …, 2016 | | 2016 |