Investigation of GaN-on-GaN vertical pn diode with regrown p-GaN by metalorganic chemical vapor deposition K Fu, H Fu, H Liu, SR Alugubelli, TH Yang, X Huang, H Chen, ...
Applied physics letters 113 (23), 2018
70 2018 High voltage vertical GaN pn diodes with hydrogen-plasma based guard rings H Fu, K Fu, SR Alugubelli, CY Cheng, X Huang, H Chen, TH Yang, ...
IEEE Electron Device Letters 41 (1), 127-130, 2019
67 2019 Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing H Fu, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, J Montes, TH Yang, ...
Applied Physics Express 12 (5), 051015, 2019
42 2019 Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics H Liu, H Fu, K Fu, SR Alugubelli, PY Su, Y Zhao, FA Ponce
Applied Physics Letters 114 (8), 2019
36 2019 Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress H Fu, K Fu, C Yang, H Liu, KA Hatch, P Peri, DH Mudiyanselage, B Li, ...
Materials Today 49, 296-323, 2021
31 2021 Nonpolar vertical GaN-on-GaN p–n diodes grown on free-standing H Fu, X Zhang, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, ...
Applied Physics Express 11 (11), 111003, 2018
30 2018 Dopant profiling in pin GaN structures using secondary electrons SR Alugubelli, H Fu, K Fu, H Liu, Y Zhao, FA Ponce
Journal of Applied Physics 126 (1), 2019
26 2019 Lateral current spreading in III-N ultraviolet vertical-cavity surface-emitting lasers using modulation-doped short period superlattices K Mehta, YS Liu, J Wang, H Jeong, T Detchprohm, YJ Park, SR Alugubelli, ...
IEEE Journal of Quantum Electronics 54 (4), 1-7, 2018
25 2018 Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN pin diodes SR Alugubelli, H Fu, K Fu, H Liu, Y Zhao, MR McCartney, FA Ponce
Applied Physics Letters 115 (20), 2019
19 2019 Theory and design of electron blocking layers for III-N-based laser diodes by numerical simulation K Mehta, YS Liu, J Wang, H Jeong, T Detchprohm, YJ Park, SR Alugubelli, ...
IEEE Journal of Quantum Electronics 54 (6), 1-11, 2018
19 2018 GaN-based threshold switching behaviors at high temperatures enabled by interface engineering for harsh environment memory applications K Fu, S Luo, H Fu, K Hatch, SR Alugubelli, H Liu, T Li, M Xu, Z Mei, Z He, ...
IEEE Transactions on Electron Devices 71 (3), 1641-1645, 2023
11 2023 High reflectivity hybrid AlGaN/Silver distributed bragg reflectors for use in the UV-visible spectrum K Mehta, T Detchprohm, YJ Park, YS Liu, O Moreno, SR Alugubelli, ...
IEEE Journal of Quantum Electronics 53 (6), 1-8, 2017
9 2017 Demonstration of nonpolar m-plane vertical GaN-on-GaN pn power diodes grown on free-standing GaN substrates H Fu, X Zhang, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, ...
arXiv preprint arXiv:1806.05308, 2018
1 2018 Nonpolar vertical GaN-on-GaN pn diodes grown on free-standing (10 (1) over-bar0) m-plane GaN H Fu, X Zhang, K Fu, H Liu, SR Alugubelli, X Huang, H Chen, ...
1 2018 1.2 kV regrown GaN vertical pn power diodes with ultra low leakage using advanced materials engineering K Fu, H Fu, H Liu, SR Alugubelli, X Huang, H Chen, TH Yang, J Montes, ...
2019 Compound Semiconductor Week (CSW), 1-1, 2019
2019 Corrections to “Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices”[Aug 18 Art. no. 2400507] K Mehta, YS Liu, J Wang, H Jeong, T Detchprohm, YJ Park, SR Alugubelli, ...
IEEE Journal of Quantum Electronics 55 (3), 1-1, 2019
2019 Nanoscale Electronic Properties in GaN Based Structures for Power Electronics Using Electron Microscopy SR Alugubelli
Arizona State University, 2019
2019 Solid State Lasers Characterisation and Modelling of a Passively Q-Switched Yb: CaF2 Laser.... TR Schoepp, HF Tiedje, and R. Fedosejevs 1700308 Semiconductor Lasers An Accurate … DB Reflectors, P Witonski, A Mossakowska-Wyszynska, P Szczepanski, ...