| Single bit‐line 11T SRAM cell for low power and improved stability R Lorenzo, R Pailly IET Computers & Digital Techniques 14 (3), 114-121, 2020 | 60 | 2020 |
| Review of circuit level leakage minimization techniques in CMOS VLSI circuits R Lorenzo, S Chaudhury IETE Technical review 34 (2), 165-187, 2017 | 59 | 2017 |
| LCNT-an approach to minimize leakage power in CMOS integrated circuits R Lorenzo, S Chaudhury Microsystem Technologies 23, 4245-4253, 2017 | 46 | 2017 |
| A novel 9T SRAM architecture for low leakage and high performance R Lorenzo, S Chaudhury Analog Integrated Circuits and Signal Processing 92, 315-325, 2017 | 34 | 2017 |
| A review on radiation‐hardened memory cells for space and terrestrial applications M Pavan Kumar, R Lorenzo International journal of circuit theory and applications 51 (1), 475-499, 2023 | 28 | 2023 |
| Dynamic threshold sleep transistor technique for high speed and low leakage in CMOS circuits R Lorenzo, S Chaudhury Circuits, Systems, and Signal Processing 36 (7), 2654-2671, 2017 | 26 | 2017 |
| A novel SRAM cell design with a body-bias controller circuit for low leakage, high speed and improved stability R Lorenzo, S Chaudhury Wireless Personal Communications 94, 3513-3529, 2017 | 23 | 2017 |
| Half‐selection disturbance free 8T low leakage SRAM cell R Lorenzo, R Paily International Journal of Circuit Theory and Applications 50 (5), 1557-1575, 2022 | 21 | 2022 |
| Design and analysis of radiation hardened 10 T SRAM cell for space and terrestrial applications PK Mukku, R Lorenzo Microsystem Technologies 29 (10), 1489-1500, 2023 | 12 | 2023 |
| Optimal body bias to control stability, leakage and speed in SRAM cell R Lorenzo, S Chaudhury Journal of Circuits, Systems and Computers 25 (08), 1650096, 2016 | 11 | 2016 |
| An effective design technique to reduce leakage power N Raj, R Lorenzo 2012 IEEE Students' Conference on Electrical, Electronics and Computer …, 2012 | 10 | 2012 |
| A 1.2 v, radiation hardened 14t sram memory cell for aerospace applications MP Kumar, R Lorenzo 2022 IEEE Silchar Subsection Conference (SILCON), 1-7, 2022 | 8 | 2022 |
| Low power 8T SRAM with high stability and bit interleaving capability R Lorenzo, DL Pradeep, AP Kumar 2022 2nd International Conference on Emerging Frontiers in Electrical and …, 2022 | 8 | 2022 |
| Low power 10t sram cell with improved stability solving soft error issue R Lorenzo, R Paily TENCON 2019-2019 IEEE Region 10 Conference (TENCON), 2549-2553, 2019 | 8 | 2019 |
| A novel all NMOS leakage feedback with data retention technique R Lorenzo, S Chaudhary Control, Automation, Robotics and Embedded Systems (CARE), 2013 …, 2013 | 8 | 2013 |
| Analysis of leakage feedback technique R Lorenzo, S Chaudhury International Conference on Electronics, Communication and Instrumentation …, 2014 | 7 | 2014 |
| A robust radiation resistant SRAM cell for space and military applications MP Kumar, R Lorenzo Integration 96, 102155, 2024 | 6 | 2024 |
| An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors PK Mukku, R Lorenzo Microelectronics Reliability 152, 115303, 2024 | 6 | 2024 |
| Double node upset immune RHBD-14T SRAM cell for space and satellite applications PK Mukku, R Lorenzo IEEE Access 11, 96256-96271, 2023 | 6 | 2023 |
| Comprehensive analysis of a power-efficient 1-bit hybrid full adder cell A Kanojia, S Agrawal, R Lorenzo Wireless Personal Communications 129 (2), 1097-1111, 2023 | 6 | 2023 |
Saurabh ChaudhuryProfessor, NIT Silcharnits.ac.in üzerinde doğrulanmış e-posta adresine sahip