The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ...
Journal of Physics D: Applied Physics 51 (16), 163001, 2018
1252 2018 Normally-off Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V) JJ Freedsman, T Egawa, Y Yamaoka, Y Yano, A Ubukata, T Tabuchi, ...
Applied Physics Express 7 (4), 041003, 2014
105 2014 High Drain Current Density E-Mode JJ Freedsman, T Kubo, T Egawa
IEEE transactions on electron devices 60 (10), 3079-3083, 2013
77 2013 Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance … JJ Freedsman, T Kubo, T Egawa
Applied Physics Letters 99 (3), 2011
63 2011 Influence of AlN nucleation layer on vertical breakdown characteristics for GaN‐on‐Si JJ Freedsman, A Watanabe, Y Yamaoka, T Kubo, T Egawa
physica status solidi (a) 213 (2), 424-428, 2016
55 2016 Electrical properties of GaN-based metal–insulator–semiconductor structures with Al2O3 deposited by atomic layer deposition using water and ozone as the oxygen precursors T Kubo, JJ Freedsman, YIT Egawa
Semiconductor Science and Technology, 2014
50 2014 Novel fully vertical GaN p–n diode on Si substrate grown by metalorganic chemical vapor deposition S Mase, Y Urayama, T Hamada, JJ Freedsman, T Egawa
Applied Physics Express 9 (11), 111005, 2016
45 2016 Effect of drift layer on the breakdown voltage of fully-vertical GaN-on-Si pn diodes S Mase, T Hamada, JJ Freedsman, T Egawa
IEEE Electron Device Letters 38 (12), 1720-1723, 2017
37 2017 Studies on the structural and optical properties of zinc oxide nanobushes and Co-doped ZnO self-aggregated nanorods synthesized by simple thermal decomposition route JJ Freedsman, LJ Kennedy, RT Kumar, G Sekaran, JJ Vijaya
Materials Research Bulletin 45 (10), 1481-1486, 2010
32 2010 Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron … JJ Freedsman, T Kubo, SL Selvaraj, T Egawa
Japanese journal of applied physics 50 (4S), 04DF03, 2011
25 2011 Characterization of InAlN/GaN high-electron-mobility transistors grown on Si substrate using graded layer and strain-layer superlattice A Watanabe, JJ Freedsman, R Oda, T Ito, T Egawa
Applied Physics Express 7 (4), 041002, 2014
23 2014 Analyses of hetero-interface trapping properties in AlGaN/GaN high electron mobility transistor heterostructures grown on silicon with thick buffer layers JJ Freedsman, T Kubo, T Egawa
Applied Physics Letters 101 (1), 2012
23 2012 Al2 O3 /AlGaN Channel Normally-Off MOSFET on Silicon With High Breakdown Voltage JJ Freedsman, T Hamada, M Miyoshi, T Egawa
IEEE Electron Device Letters 38 (4), 497-500, 2017
22 2017 Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate JJ Freedsman, A Watanabe, Y Urayama, T Egawa
Applied Physics letters 107 (10), 103506, 2015
19 2015 Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field … JJ Freedsman, T Kubo, T Egawa
AIP advances 2 (2), 2012
18 2012 Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors M Miyoshi, T Tsutsumi, G Nishino, Y Miyachi, M Okada, JJ Freedsman, ...
Journal of Vacuum Science & Technology B 34 (5), 2016
17 2016 Recessed gate normally-OFF Al2O3/InAlN/GaN MOS-HEMT on silicon JJ Freedsman, A Watanabe, T Ito, T Egawa
Applied Physics Express 7 (10), 104101, 2014
17 2014 Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition A Watanabe, JJ Freedsman, Y Urayama, T Egawa
Journal of Applied Physics 118 (23), 235705, 2015
11 2015 Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility … T Kubo, JJ Freedsman, Y Yoshida, T Egawa
Japanese Journal of Applied Physics 54 (2), 020301, 2015
10 2015 Enhancement of breakdown voltage for fully-vertical GaN-on-Si pn diode by using strained layer superlattice as drift layer S Mase, T Hamada, JJ Freedsman, T Egawa
Semiconductor Science and Technology 33 (6), 065017, 2018
5 2018 
yasukazu yoshidaNational Institute of Advanced Industrial Science and Technology (AIST)aist.go.jp üzerinde doğrulanmış e-posta adresine sahip