| Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study J Ajayan, D Nirmal, S Tayal, S Bhattacharya, L Arivazhagan, ASA Fletcher, ... Microelectronics Journal 114, 105141, 2021 | 94 | 2021 |
| Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review J Ajayan, D Nirmal, P Mohankumar, B Mounika, S Bhattacharya, S Tayal, ... Materials Science in Semiconductor Processing 151, 106982, 2022 | 91 | 2022 |
| Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review B Mounika, J Ajayan, S Bhattacharya, D Nirmal Micro and Nanostructures 168, 207317, 2022 | 68 | 2022 |
| Theoretical analysis of the NH3, NO, and NO2 adsorption on boron-nitrogen and boron-phosphorous co-doped monolayer graphene-A comparative study A Tiwari, J Palepu, A Choudhury, S Bhattacharya, S Kanungo FlatChem 34, 100392, 2022 | 49 | 2022 |
| Artificial intelligence enabled healthcare: A hype, hope or harm S Bhattacharya, KB Pradhan, MA Bashar, S Tripathi, J Semwal, RR Marzo, ... Journal of family medicine and primary care 8 (11), 3461-3464, 2019 | 43 | 2019 |
| A critical review of AlGaN/GaN-heterostructure based Schottky diode/HEMT hydrogen (H2) sensors for aerospace and industrial applications J Ajayan, D Nirmal, R Ramesh, S Bhattacharya, S Tayal, LMIL Joseph, ... Measurement 186, 110100, 2021 | 36 | 2021 |
| A critical review on performance, reliability, and fabrication challenges in nanosheet FET for future analog/digital IC applications S Valasa, S Tayal, LR Thoutam, J Ajayan, S Bhattacharya Micro and Nanostructures 170, 207374, 2022 | 34 | 2022 |
| Incorporating bottom-up approach into device/circuit co-design for SRAM-based cache memory applications S Tayal, B Smaani, SB Rahi, AK Upadhyay, S Bhattacharya, J Ajayan, ... IEEE Transactions on Electron Devices 69 (11), 6127-6132, 2022 | 33 | 2022 |
| Stability Analysis in Top-Contact and Side-Contact Graphene Nanoribbon Interconnects S Bhattacharya, D Das, H Rahaman IETE Journal of Research, Taylor & Francis, SCI, J. C. Bose Memorial Award …, 2017 | 30 | 2017 |
| Reduced thickness interconnect model using GNR to avoid crosstalk effects S Bhattacharya, D Das, H Rahaman Journal of Computational Electronics,Springer US, SCI 15 (2), 367-380, 2016 | 27 | 2016 |
| Investigation of nanosheet-FET based logic gates at sub-7 nm technology node for digital IC applications S Tayal, S Valasa, S Bhattacharya, J Ajayan, SM Ahmed, B Jena, ... Silicon 14 (18), 12261-12267, 2022 | 26 | 2022 |
| Design of digital logic circuits using carbon nanotube field effect transistors S Das, S Bhattacharya, D Das International Journal of Soft Computing and Engineering 1 (6), 173-178, 2011 | 25 | 2011 |
| Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications J Ajayan, P Mohankumar, D Nirmal, LMIL Joseph, S Bhattacharya, ... Materials Today Communications 35, 105591, 2023 | 24 | 2023 |
| Modeling and Analysis of Electro-Thermal Impact of Crosstalk Induced Gate Oxide Reliability in Pristine and Intercalation Doped MLGNR Interconnects S Das, S Bhattacharya, D Das, H Rahaman IEEE Transactions on Device and Materials Reliability (SCI) 19 (3), 543-550, 2019 | 24 | 2019 |
| Comparative analysis of strain engineering on the electronic properties of homogenous and heterostructure bilayers of MoX2 (X= S, Se, Te) J Palepu, PP Anand, P Parshi, V Jain, A Tiwari, S Bhattacharya, ... Micro and Nanostructures 168, 207334, 2022 | 23 | 2022 |
| Performance analysis of the dielectrically modulated junction-less nanotube field effect transistor for biomolecule detection S Tayal, B Majumdar, S Bhattacharya, S Kanungo IEEE Transactions on NanoBioscience 22 (1), 174-181, 2022 | 21 | 2022 |
| Analysis of a temperature-dependent delay optimization model for GNR interconnects using a wire sizing method S Bhattacharya, S Das, A Mukhopadhyay, D Das, H Rahaman Journal of Computational Electronics- SCI, 1-13, 2018 | 20 | 2018 |
| Analysis of stability in carbon nanotube and graphene nanoribbon interconnects S Bhattacharya, S Das, D Das International Journal of Soft Computing and Engineering (IJSCE) 2 (6), 325-329, 2013 | 16 | 2013 |
| RF performance analysis of graphene nanoribbon interconnect S Das, S Bhattacharya, D Das, H Rahaman Proceedings of the 2014 IEEE Students' Technology Symposium, 105-110, 2014 | 15 | 2014 |
| 2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications B Mounika, J Ajayan, S Bhattacharya Materials Science and Engineering: B 301, 117194, 2024 | 14 | 2024 |
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