Min Hyuk Park

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Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National Universitysnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Han Joon KimSeoul National Universitysnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Taehwan MoonDepartment of Intelligence Semiconductor Engineering, Ajou Universityajou.ac.kr üzerinde doğrulanmış e-posta adresine sahip
YUJIN KIMYale Universityyale.edu üzerinde doğrulanmış e-posta adresine sahip
Thomas MikolajickScientific Director, NaMLab GmbH and Professor for Nanoelectronics, TU Dresdennamlab.com üzerinde doğrulanmış e-posta adresine sahip
Keum Do KimSamsung Electronicssnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Young Hwan LeeSeoul National Universitysnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Tony SchenkMember of Technical Staff & Lead of Stack Development at Ferroelectric Memory Companyferroelectric-memory.com üzerinde doğrulanmış e-posta adresine sahip
Dong Hyun LeeSeoul National University, Department of Materials Science and Engineeringsnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Hyeon Woo ParkPostdoctoral researcher, Georgia Institute of Technologygatech.edu üzerinde doğrulanmış e-posta adresine sahip
Kun YangSeoul National Universitysnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Jacob L. JonesMaterials Science & Engineering, North Carolina State Universityncsu.edu üzerinde doğrulanmış e-posta adresine sahip
Ju Yong ParkSeoul National Universitysnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Se Hyun KimSeoul National Universitysnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Geun Hyeong ParkSeoul National Universitysnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Franz P. G. FenglerNaMLab gGmbHnamlab.com üzerinde doğrulanmış e-posta adresine sahip
Geun Taek YuPusan National Universitypusan.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Woongkyu LeeSoongsil Universityssu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Younghwan LeeAssistant professor, Chonnam National Universityjnu.ac.kr üzerinde doğrulanmış e-posta adresine sahip
Stefan SlesazeckNaMLab gGmbHnamlab.com üzerinde doğrulanmış e-posta adresine sahip

Takip et

Min Hyuk Park

Seoul National University

snu.ac.kr üzerinde doğrulanmış e-posta adresine sahip - Ana Sayfa

Ferroelectricity Thin film Structural analysis New memory Energy application


Başlık Alıntılara göre sırala Yıla göre sırala Başlığa göre sırala	Alıntı yapanlar Alıntı yapanlar	Yıl
Ferroelectricity and Antiferroelectricity of Doped Thin HfO₂‐Based Films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ... Advanced Materials 27 (11), 1811-1831, 2015	1095	2015
Evolution of phases and ferroelectric properties of thin Hf_0.5Zr_0.5O₂ films according to the thickness and annealing temperature M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, T Moon, C Seong Hwang Applied Physics Letters 102 (24), 242905, 2013	778	2013
Review and perspective on ferroelectric HfO₂-based thin films for memory applications MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang MRS Communications 8 (3), 795-808, 2018	501	2018
The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity M Hyuk Park, H Joon Kim, Y Jin Kim, T Moon, C Seong Hwang Applied Physics Letters 104 (7), 072901-072901-5, 2014	435	2014
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ... Nanoscale 9 (28), 9973-9986, 2017	349	2017
Thin Hf_xZr_1‐xO₂ Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, CS Hwang Advanced Energy Materials 4 (16), 1400610, 2014	348	2014
The fundamentals and applications of ferroelectric HfO₂ U Schroeder, MH Park, T Mikolajick, CS Hwang Nature Reviews Materials 7 (8), 653-669, 2022	345	2022
Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material. U Schroeder, C Richter, MH Park, T Schenk, M Pešić, M Hoffmann, ... Inorganic chemistry, 2018	326	2018
A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants MH Park, T Schenk, CM Fancher, ED Grimley, C Zhou, C Richter, ... Journal of Materials Chemistry C 5 (19), 4677-4690, 2017	315	2017
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors T Mikolajick, S Slesazeck, MH Park, U Schroeder MRS Bulletin 43 (5), 340-346, 2018	310	2018
Next generation ferroelectric materials for semiconductor process integration and their applications T Mikolajick, S Slesazeck, H Mulaosmanovic, MH Park, S Fichtner, ... Journal of Applied Physics 129 (10), 100901, 2021	306	2021
Grain size engineering for ferroelectric Hf_0.5Zr_0.5O₂ films by an insertion of Al₂O₃ interlayer HJ Kim, MH Park, YJ Kim, YH Lee, W Jeon, T Gwon, T Moon, KD Kim, ... Applied Physics Letters 105 (19), 192903, 2014	273	2014
Improved Ferroelectric Switching Endurance of La-Doped Hf_0.5Zr_0.5O₂ Thin Films AG Chernikova, MG Kozodaev, DV Negrov, EV Korostylev, MH Park, ... ACS applied materials & interfaces 10 (3), 2701-2708, 2018	268	2018
A study on the wake-up effect of ferroelectric Hf 0.5 Zr 0.5 O 2 films by pulse-switching measurement HJ Kim, MH Park, YJ Kim, YH Lee, T Moon, K Do Kim, SD Hyun, ... Nanoscale 8 (3), 1383-1389, 2016	263	2016
Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, K Do Kim, SD Hyun, ... Nanoscale 10 (2), 716-725, 2018	231	2018
Ferroelectricity in undoped-HfO 2 thin films induced by deposition temperature control during atomic layer deposition KD Kim, MH Park, HJ Kim, YJ Kim, T Moon, YH Lee, SD Hyun, T Gwon, ... Journal of Materials Chemistry C 4 (28), 6864-6872, 2016	227	2016
Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1− x O 2 films MH Park, HJ Kim, YJ Kim, T Moon, K Do Kim, CS Hwang Nano Energy 12, 131-140, 2015	221	2015
Effect of forming gas annealing on the ferroelectric properties of Hf_0.5Zr_0.5O₂ thin films with and without Pt electrodes M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, H Kyeom Kim, ... Applied Physics Letters 102 (11), 112914, 2013	220	2013
Effect of Zr Content on the Wake-Up Effect in Hf_1–xZr_xO₂ Films MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, F Fengler, ... ACS applied materials & interfaces 8 (24), 15466-15475, 2016	215	2016
Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories J Jiang, ZL Bai, ZH Chen, L He, DW Zhang, QH Zhang, JA Shi, MH Park, ... Nature materials 17 (1), 49-56, 2018	213	2018

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