| In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy Z Zuo, Z Xu, R Zheng, A Khanaki, JG Zheng, J Liu Scientific reports 5 (1), 14760, 2015 | 106 | 2015 |
| Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy Z Xu, H Tian, A Khanaki, R Zheng, M Suja, J Liu Scientific reports 7 (1), 43100, 2017 | 65 | 2017 |
| Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy Z Xu, A Khanaki, H Tian, R Zheng, M Suja, JG Zheng, J Liu Applied Physics Letters 109 (4), 2016 | 45 | 2016 |
| Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy Z Xu, R Zheng, A Khanaki, Z Zuo, J Liu Applied Physics Letters 107 (21), 2015 | 45 | 2015 |
| Role of carbon interstitials in transition metal substrates on controllable synthesis of high-quality large-area two-dimensional hexagonal boron nitride layers H Tian, A Khanaki, P Das, R Zheng, Z Cui, Y He, W Shi, Z Xu, R Lake, ... Nano letters 18 (6), 3352-3361, 2018 | 43 | 2018 |
| Study of direct tunneling and dielectric breakdown in molecular beam epitaxial hexagonal boron nitride monolayers using metal–insulator–metal devices Z Cui, Y He, H Tian, A Khanaki, L Xu, W Shi, J Liu ACS Applied Electronic Materials 2 (3), 747-755, 2020 | 28 | 2020 |
| Growth dynamics of millimeter‐sized single‐crystal hexagonal boron nitride monolayers on secondary recrystallized Ni (100) substrates H Tian, Y He, P Das, Z Cui, W Shi, A Khanaki, RK Lake, J Liu Advanced Materials Interfaces 6 (22), 1901198, 2019 | 28 | 2019 |
| Low-temperature growth of graphene on iron substrate by molecular beam epitaxy R Zheng, Z Xu, A Khanaki, H Tian, Z Zuo, JG Zheng, J Liu Thin Solid Films 627, 39-43, 2017 | 26 | 2017 |
| Electrophoretic Deposition of CuIn1-xGaxSe2 Thin Films Using Solvothermal Synthesized Nanoparticles for Solar Cell Application A Khanaki, H Abdizadeh, MR Golobostanfard The Journal of Physical Chemistry C 119 (40), 23250-23258, 2015 | 25 | 2015 |
| Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures A Khanaki, H Tian, Z Xu, R Zheng, Y He, Z Cui, J Yang, J Liu Nanotechnology 29 (3), 035602, 2017 | 20 | 2017 |
| Effects of process parameters on the synthesis and characterization of CuIn1− xGaxSe2 nanopowders produced by new modified solvothermal method A Khanaki, H Abdizadeh, MR Golobostanfard Materials Science in Semiconductor Processing 16 (6), 1397-1404, 2013 | 20 | 2013 |
| Large-area adlayer-free single-layer h-BN film achieved by controlling intercalation growth Y He, H Tian, A Khanaki, W Shi, J Tran, Z Cui, P Wei, J Liu Applied Surface Science 498, 143851, 2019 | 13 | 2019 |
| Self-assembled cubic boron nitride nanodots A Khanaki, Z Xu, H Tian, R Zheng, Z Zuo, JG Zheng, J Liu Scientific Reports 7 (1), 4087, 2017 | 12 | 2017 |
| Precipitation growth of graphene under exfoliated hexagonal boron nitride to form heterostructures on cobalt substrate by molecular beam epitaxy R Zheng, A Khanaki, H Tian, Y He, Y Cui, Z Xu, J Liu Applied Physics Letters 111 (1), 2017 | 8 | 2017 |
| Molecular Beam Epitaxy Growth of Hexagonal Boron Nitride/Graphene Heterostructures, Hexagonal Boron Nitride Layers and Cubic Boron Nitride Nanodots A Khanaki University of California, Riverside, 2017 | | 2017 |
Jianlin LiuProfessor of Electrical and Computer Engineering, University of California, Riversideece.ucr.edu üzerinde doğrulanmış e-posta adresine sahip