Kamu erişimi zorunlu olan makaleler - David J. MeyerDaha fazla bilgi edinin
Hiçbir yerde sunulmuyor: 10
X-band power and linearity performance of compositionally graded AlGaN channel transistors
SH Sohel, A Xie, E Beam, H Xue, JA Roussos, T Razzak, S Bajaj, Y Cao, ...
IEEE Electron Device Letters 39 (12), 1884-1887, 2018
Zorunlu olanlar: US Department of Defense
Compositionally graded III-N HEMTs for improved linearity: A simulation study
MG Ancona, JP Calame, DJ Meyer, S Rajan, BP Downey
IEEE Transactions on Electron Devices 66 (5), 2151-2157, 2019
Zorunlu olanlar: US Department of Defense
Passivation schemes for ScAlN-barrier mm-wave high electron mobility transistors
MB Tahhan, JA Logan, MT Hardy, MG Ancona, B Schultz, B Appleton, ...
IEEE Transactions on Electron Devices 69 (3), 962-967, 2022
Zorunlu olanlar: US Department of Defense
High power density ScAlN-based heterostructure FETs for mm-wave applications
TE Kazior, EM Chumbes, B Schultz, J Logan, DJ Meyer, MT Hardy
2019 IEEE MTT-S International Microwave Symposium (IMS), 1136-1139, 2019
Zorunlu olanlar: US Department of Defense
ScAlN-GaN transistor technology for millimeter-wave ultra-high power and efficient MMICs
EM Chumbes, J Logan, B Schultz, M DeJarld, M Tahhan, N Kolias, ...
2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 295-297, 2022
Zorunlu olanlar: US Department of Defense
Localized phase change of VO2 films grown by atomic-layer deposition on InAlN/AlN/GaN heterostructures
BP Downey, VD Wheeler, DJ Meyer
Applied Physics Express 10 (6), 061101, 2017
Zorunlu olanlar: US Department of Defense
MBE growth and characterization of gallium oxide
N Nepal, DS Katzer, DJ Meyer
Gallium Oxide, 31-46, 2019
Zorunlu olanlar: US Department of Defense
Small-signal characteristics of graded AlGaN channel PolFETs
S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, SH Sohel, S Krishnamoorthy, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
Zorunlu olanlar: US Department of Defense
Dynamic Mode Suppression and Frequency Tuning in S-Band GaN/YIG Magnetoelastic HBARs
VJ Gokhale, A Jander, BP Downey, P Dhagat, SC Mack, DS Katzer, ...
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 70 …, 2023
Zorunlu olanlar: US Department of Defense
Emerging materials, processing and device concepts: Epitaxial transition metal nitride electronic materials
DJ Meyer, DS Katzer, MT Hardy, N Nepal, BP Downey
Semiconductors and Semimetals 102, 435-465, 2019
Zorunlu olanlar: US Department of Defense
Bir yerde sunuluyor: 50
GaN/NbN epitaxial semiconductor/superconductor heterostructures
R Yan, G Khalsa, S Vishwanath, Y Han, J Wright, S Rouvimov, DS Katzer, ...
Nature 555 (7695), 183-189, 2018
Zorunlu olanlar: US National Science Foundation, US Department of Defense
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer
Applied Physics Letters 110 (16), 2017
Zorunlu olanlar: US Department of Defense
Graded AlGaN channel transistors for improved current and power gain linearity
S Bajaj, Z Yang, F Akyol, PS Park, Y Zhang, AL Price, S Krishnamoorthy, ...
IEEE Transactions on Electron Devices 64 (8), 3114-3119, 2017
Zorunlu olanlar: US Department of Defense
Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
VJ Gokhale, BP Downey, DS Katzer, N Nepal, AC Lang, RM Stroud, ...
Nature communications 11 (1), 2314, 2020
Zorunlu olanlar: US Department of Defense
Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
VD Wheeler, N Nepal, DR Boris, SB Qadri, LO Nyakiti, A Lang, A Koehler, ...
Chemistry of Materials 32 (3), 1140-1152, 2020
Zorunlu olanlar: US Department of Defense
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy
MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ...
Applied Physics Express 13 (6), 065509, 2020
Zorunlu olanlar: US Department of Defense
Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures
TA Growden, W Zhang, ER Brown, DF Storm, DJ Meyer, PR Berger
Light: Science & Applications 7 (2), 17150-17150, 2018
Zorunlu olanlar: US Department of Defense
431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes
TA Growden, W Zhang, ER Brown, DF Storm, K Hansen, P Fakhimi, ...
Applied physics letters 112 (3), 2018
Zorunlu olanlar: US Department of Defense
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy
N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ...
Journal of Vacuum Science & Technology A 38 (6), 2020
Zorunlu olanlar: US Department of Defense
Epitaxial ScAlN etch-stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN
MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm, DS Katzer
IEEE Transactions on Semiconductor Manufacturing 30 (4), 475-479, 2017
Zorunlu olanlar: US Department of Defense
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