S. T. Picraux

Alıntı yapanlar

	Hepsi	2020 yılından bugüne
Alıntılar	19104	2403
h-endeksi	70	22
i10-endeksi	224	56

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Finansman sağlayan kuruluşun getirdiği zorunluluğa dayalı olarak

Katkıda bulunan yazarlar

Jian Yu Huang (黄建宇)Clean Nano Energy Center, State Key Laboratory of Metastable Materials Science and Technologyysu.edu.cn üzerinde doğrulanmış e-posta adresine sahip
Jeff TsaoSandia National Laboratoriessandia.gov üzerinde doğrulanmış e-posta adresine sahip
Wei-Kan ChuCullen Professor of Physics, University of Houstonuh.edu üzerinde doğrulanmış e-posta adresine sahip
Jinkyoung YooCenter for Integrated Nanotechnologies, Los Alamos National Laboratorylanl.gov üzerinde doğrulanmış e-posta adresine sahip
Yang Liu3Mmmm.com üzerinde doğrulanmış e-posta adresine sahip
Daniel E. PereaPacific Northwest National Laboratorypnnl.gov üzerinde doğrulanmış e-posta adresine sahip
R M BiefeldRetiredsandia.gov üzerinde doğrulanmış e-posta adresine sahip
L. Ralph DawsonResearch Professor of ECE, University of New Mexicochtm.unm.edu üzerinde doğrulanmış e-posta adresine sahip

Takip et

S. T. Picraux

Los Alamos National Laboratory

lanl.gov üzerinde doğrulanmış e-posta adresine sahip

materials science


Başlık Alıntılara göre sırala Yıla göre sırala Başlığa göre sırala	Alıntı yapanlar Alıntı yapanlar	Yıl
Materials analysis by ion channeling: submicron crystallography LC Feldman, JW Mayer, STA Picraux Academic Press, 2012	1680	2012
Anisotropic swelling and fracture of silicon nanowires during lithiation XH Liu, H Zheng, L Zhong, S Huang, K Karki, LQ Zhang, Y Liu, A Kushima, ... Nano letters 11 (8), 3312-3318, 2011	872	2011
In situ atomic-scale imaging of electrochemical lithiation in silicon XH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ... Nature nanotechnology 7 (11), 749-756, 2012	710	2012
Ultrafast electrochemical lithiation of individual Si nanowire anodes XH Liu, LQ Zhang, L Zhong, Y Liu, H Zheng, JW Wang, JH Cho, ... Nano letters 11 (6), 2251-2258, 2011	492	2011
Adaptable silicon–carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes B Wang, X Li, X Zhang, B Luo, M Jin, M Liang, SA Dayeh, ST Picraux, ... ACS nano 7 (2), 1437-1445, 2013	482	2013
Reversible nanopore formation in Ge nanowires during lithiation–delithiation cycling: An in situ transmission electron microscopy study XH Liu, S Huang, ST Picraux, J Li, T Zhu, JY Huang Nano letters 11 (9), 3991-3997, 2011	450	2011
Ion beams in silicon processing and characterization E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ... Journal of applied physics 81 (10), 6513-6561, 1997	367	1997
Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering JW Mayer, L Eriksson, ST Picraux, JA Davies Canadian Journal of Physics 46 (6), 663-673, 1968	364	1968
Epitaxial growth of rare‐earth silicides on (111) Si JA Knapp, ST Picraux Applied physics letters 48 (7), 466-468, 1986	324	1986
Lotus effect amplifies light-induced contact angle switching R Rosario, D Gust, AA Garcia, M Hayes, JL Taraci, T Clement, JW Dailey, ... The Journal of Physical Chemistry B 108 (34), 12640-12642, 2004	311	2004
Dependence of critical layer thickness on strain for InxGa1− xAs/GaAs strained‐layer superlattices IJ Fritz, ST Picraux, LR Dawson, TJ Drummond, WD Laidig, NG Anderson Applied Physics Letters 46 (10), 967-969, 1985	280	1985
Are nanoporous materials radiation resistant? EM Bringa, JD Monk, A Caro, A Misra, L Zepeda-Ruiz, M Duchaineau, ... Nano letters 12 (7), 3351-3355, 2012	273	2012
Critical Stresses for Strained-Layer Plasticity JY Tsao, BW Dodson, ST Picraux, DM Cornelison Physical review letters 59 (21), 2455, 1987	240	1987
Formation of SiC in silicon by ion implantation JA Borders, ST Picraux, W Beezhold Applied Physics Letters 18 (11), 509-511, 1971	240	1971
Role of integrated lateral stress in surface deformation of He‐implanted surfaces EP EerNisse, ST Picraux Journal of Applied Physics 48 (1), 9-17, 1977	238	1977
Defect trapping of ion‐implanted deuterium in Fe SM Myers, ST Picraux, RE Stoltz Journal of Applied Physics 50 (9), 5710-5719, 1979	211	1979
Partitioning of ion-induced surface and bulk displacements DK Brice, JY Tsao, ST Picraux Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1989	189	1989
Direct observation of nanoscale size effects in Ge semiconductor nanowire growth SA Dayeh, ST Picraux Nano letters 10 (10), 4032-4039, 2010	186	2010
Precipitation and relaxation in strained Si_1−yC_y/Si heterostructures JW Strane, HJ Stein, SR Lee, ST Picraux, JK Watanabe, JW Mayer Journal of applied physics 76 (6), 3656-3668, 1994	175	1994
Metastable SiGeC formation by solid phase epitaxy JW Strane, HJ Stein, SR Lee, BL Doyle, ST Picraux, JW Mayer Applied physics letters 63 (20), 2786-2788, 1993	172	1993

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