Measurements of the effective mass and scattering times of composite fermions from magnetotransport analysis DR Leadley, RJ Nicholas, CT Foxon, JJ Harris
Physical review letters 72 (12), 1906, 1994
232 1994 Intersubband resonant scattering in GaAs-Ga 1− x Al x As heterojunctions DR Leadley, R Fletcher, RJ Nicholas, F Tao, CT Foxon, JJ Harris
Physical Review B 46 (19), 12439, 1992
138 1992 Ohmic contacts to n-type germanium with low specific contact resistivity K Gallacher, P Velha, DJ Paul, I MacLaren, M Myronov, DR Leadley
Applied Physics Letters 100 (2), 2012
124 2012 Fractional quantum Hall effect measurements at zero g factor DR Leadley, RJ Nicholas, DK Maude, AN Utjuzh, JC Portal, JJ Harris, ...
Physical review letters 79 (21), 4246, 1997
124 1997 Critical collapse of the exchange-enhanced spin splitting in two-dimensional systems DR Leadley, RJ Nicholas, JJ Harris, CT Foxon
Physical Review B 58 (19), 13036, 1998
114 1998 Ultra-high hole mobility exceeding one million in a strained germanium quantum well A Dobbie, M Myronov, RJH Morris, AHA Hassan, MJ Prest, VA Shah, ...
Applied Physics Letters 101 (17), 2012
111 2012 Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm RE Warburton, G Intermite, M Myronov, P Allred, DR Leadley, K Gallacher, ...
IEEE Transactions on Electron Devices 60 (11), 3807-3813, 2013
109 2013 Reverse graded relaxed buffers for high Ge content SiGe virtual substrates VA Shah, A Dobbie, M Myronov, DJF Fulgoni, LJ Nash, DR Leadley
Applied Physics Letters 93 (19), 2008
107 2008 Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates VA Shah, A Dobbie, M Myronov, DR Leadley
Journal of Applied Physics 107 (6), 2010
103 2010 Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 2013
99 2013 High quality relaxed Ge layers grown directly on a Si (0 0 1) substrate VA Shah, A Dobbie, M Myronov, DR Leadley
Solid-State Electronics 62 (1), 189-194, 2011
81 2011 Cyclotron phonon emission and electron energy loss rates in GaAs-GaAlAs heterojunctions DR Leadley, RJ Nicholas, JJ Harris, CT Foxon
Semiconductor science and technology 4 (10), 879, 1989
80 1989 Modulation of the absorption coefficient at L Lever, Y Hu, M Myronov, X Liu, N Owens, FY Gardes, IP Marko, ...
Optics letters 36 (21), 4158-4160, 2011
74 2011 Observation of microwave-induced resistance oscillations in a high-mobility two-dimensional hole gas in a strained Ge/SiGe quantum well MA Zudov, OA Mironov, QA Ebner, PD Martin, Q Shi, DR Leadley
Physical Review B 89 (12), 125401, 2014
64 2014 Spin transport in germanium at room temperature C Shen, T Trypiniotis, KY Lee, SN Holmes, R Mansell, M Husain, V Shah, ...
Applied Physics Letters 97 (16), 2010
63 2010 Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas C Morrison, P Wiśniewski, SD Rhead, J Foronda, DR Leadley, M Myronov
Applied Physics Letters 105 (18), 2014
62 2014 Application of Bryan’s algorithm to the mobility spectrum analysis of semiconductor devices D Chrastina, JP Hague, DR Leadley
Journal of applied physics 94 (10), 6583-6590, 2003
62 2003 Effect of layer thickness on structural quality of Ge epilayers grown directly on Si (001) VA Shah, A Dobbie, M Myronov, DR Leadley
Thin Solid Films 519 (22), 7911-7917, 2011
58 2011 Influence of acoustic phonons on inter-subband scattering in GaAs-GaAlAs heterojunctions DR Leadley, RJ Nicholas, JJ Harris, CT Foxon
Semiconductor science and technology 4 (10), 885, 1989
51 1989 Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents AJ Matthews, KV Kavokin, A Usher, ME Portnoi, M Zhu, JD Gething, ...
Physical Review B—Condensed Matter and Materials Physics 70 (7), 075317, 2004
50 2004