Total-Ionizing-Dose Effects on Threshold Switching in G Liu, EX Zhang, CD Liang, MA Bloodgood, TT Salguero, DM Fleetwood, ...
IEEE Electron Device Letters 38 (12), 1724-1727, 2017
59 2017 Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2 /HfO2 Gate Dielectrics M Gorchichko, Y Cao, EX Zhang, D Yan, H Gong, SE Zhao, P Wang, ...
IEEE Transactions on Nuclear Science 67 (1), 245-252, 2019
50 2019 Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics CD Liang, R Ma, Y Su, A O’Hara, EX Zhang, ML Alles, P Wang, SE Zhao, ...
IEEE Transactions on Nuclear Science 65 (6), 1227-1238, 2018
49 2018 Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si EX Zhang, DM Fleetwood, JA Hachtel, C Liang, RA Reed, ML Alles, ...
IEEE Transactions on Nuclear Science 64 (1), 226-232, 2016
34 2016 Total Ionizing Dose Effects on HfO2 -Passivated Black Phosphorus Transistors C Liang, Y Su, EX Zhang, K Ni, ML Alles, RD Schrimpf, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 64 (1), 170-175, 2016
26 2016 Radiation-induced charge trapping and low-frequency noise of graphene transistors P Wang, C Perini, A O’Hara, BR Tuttle, EX Zhang, H Gong, C Liang, ...
IEEE Transactions on Nuclear Science 65 (1), 156-163, 2017
25 2017 Capacitance–frequency estimates of border-trap densities in multifin MOS capacitors SE Zhao, R Jiang, EX Zhang, W Liao, C Liang, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 65 (1), 175-183, 2017
18 2017 Laser-induced Single-event Transients in Black Phosphorus MOSFETs C Liang, et al.
IEEE Transactions on Nuclear Science, 2018
13 2018 Radiation-induced charge trapping in black phosphorus MOSFETs with HfO 2 gate dielectrics CD Liang, P Wang, SM Zhao, EX Zhang, ML Alles, DM Fleetwood, ...
IEEE Trans. Nucl. Sci. 65 (6), 1227-1238, 2018
9 2018 Electron mobility in thin In0.53 Ga0.47 As channel E Cartier, A Majumdar, KT Lee, T Ando, MM Frank, J Rozen, KA Jenkins, ...
2017 47th European Solid-State Device Research Conference (ESSDERC), 292-295, 2017
8 2017 Total-ionizing-dose effects on a graphene X-ray detector laser-scribed from graphene oxide NQ Deng, WJ Liao, J Hu, P Wang, MX Xu, HN Zhang, P Wang, CD Liang, ...
IEEE Transactions on Nuclear Science 65 (1), 473-477, 2017
4 2017 硬件架构对片上网络性能影响及优化策略研究 梁春东， 杨银堂
西安: 西安电子科技大学, 2011
1 2011 Shift left design for reliability methodology for ASIC controllers C Liang, S Gupta
MICRON–TLP SYSTEMS SOLUTIONS TECHNICAL SEMINAR & Proceedings, 2021
2021 Capacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors R Jiang, EX Zhang, W Liao, C Liang, D Fleetwood, R Schrimpf, R Reed, ...
2018 Radiation effects and low frequency noise in black phosphorus transistors C Liang
Vanderbilt University, 2018
2018 Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si J Mitard, EX Zhang, D Fleetwood, J Hachtel, C Liang, R Reed, M Alles, ...
2016 Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations C Liang
2014 Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics........... CD Liang, R Ma, Y Su, A O’Hara, EX Zhang, ML Alles, P Wang, SE Zhao, ...