WSe2 /SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake N Oliva, J Backman, L Capua, M Cavalieri, M Luisier, AM Ionescu
npj 2D Materials and Applications 4 (1), 5, 2020
79 2020 Wearable multifunctional sweat-sensing system for efficient healthcare monitoring F Criscuolo, IN Hanitra, S Aiassa, I Taurino, N Oliva, S Carrara, ...
Sensors and Actuators B: Chemical 328, 129017, 2021
73 2021 Van der Waals MoS2 /VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse N Oliva, EA Casu, C Yan, A Krammer, T Rosca, A Magrez, I Stolichnov, ...
Scientific reports 7 (1), 14250, 2017
45 2017 Super High Frequency Aluminum Nitride Two-Dimensional-Mode Resonators With C Cassella, N Oliva, J Soon, M Srinivas, N Singh, G Piazza
IEEE Microwave and Wireless Components Letters 27 (2), 105-107, 2017
31 2017 Hybrid phase-change—Tunnel FET (PC-TFET) switch with subthreshold swing< 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking EA Casu, WA Vitale, N Oliva, T Rosca, A Biswas, C Alper, A Krammer, ...
2016 IEEE International Electron Devices Meeting (IEDM), 19.3. 1-19.3. 4, 2016
23 2016 An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction S Kamaei, A Saeidi, F Jazaeri, A Rassekh, N Oliva, M Cavalieri, ...
IEEE Electron Device Letters 41 (4), 645-648, 2020
16 2020 Co-integrated Subthermionic 2D/2D WSe2 /SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET N Oliva, L Capua, M Cavalieri, AM Ionescu
2019 IEEE International Electron Devices Meeting (IEDM), 37.2. 1-37.2. 4, 2019
12 2019 Tunable rf phase shifters based on vanadium dioxide metal insulator transition EA Casu, N Oliva, M Cavalieri, AA Müller, A Fumarola, WA Vitale, ...
IEEE Journal of the Electron Devices Society 6, 965-971, 2018
12 2018 Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control N Oliva, EA Casu, M Cavalieri, AM Ionescu
2018 48th European Solid-State Device Research Conference (ESSDERC), 114-117, 2018
7 2018 Polarity control of top gated black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes N Oliva, EA Casu, WA Vitale, I Stolichnov, AM Ionescu
IEEE Journal of the Electron Devices Society 6, 1041-1047, 2018
6 2018 MoS2 /VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors N Oliva, EA Casu, C Yan, A Krammer, A Magrez, A Schueler, OJF Martin, ...
2017 IEEE International Electron Devices Meeting (IEDM), 36.1. 1-36.1. 4, 2017
6 2017 Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications EA Casu, WA Vitale, M Tamagnone, MM Lopez, N Oliva, A Krammer, ...
2017 47th European Solid-State Device Research Conference (ESSDERC), 232-235, 2017
6 2017 Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric N Oliva, YY Illarionov, EA Casu, M Cavalieri, T Knobloch, T Grasser, ...
IEEE Journal of the Electron Devices Society 7, 1163-1169, 2019
3 2019 Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes N Oliva, EA Casu, WA Vitale, I Stolichnov, AM Ionescu
2017 47th European Solid-State Device Research Conference (ESSDERC), 102-105, 2017
3 2017 Next Generation 1.7 kV Chipset: Fine-Pattern Trench IGBT and Ultra-Thin FSA Diode for Traction Applications WA Vitale, G Paques, B Boksteen, G Gupta, A Ruiz, N Oliva, ...
PCIM Europe 2022; International Exhibition and Conference for Power …, 2022
1 2022 1.2 kV Trench IGBT with SiC JBS Diode for High Frequency Switching Applications N Schneider, E Buitrago, Y Arango, N Oliva, T Ruiz, L De Michielis, ...
PCIM Europe 2022; International Exhibition and Conference for Power …, 2022
2022 At the end of scaling: 2D materials for computing and sensing applications N Oliva
EPFL, 2020
2020 
A.M. IonescuProfessor of Nanoelectronicsepfl.ch üzerinde doğrulanmış e-posta adresine sahip