Takip et
Tyler Growden
Tyler Growden
Research scientist, US Naval Research Laboratory
nrl.navy.mil üzerinde doğrulanmış e-posta adresine sahip
Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy
TA Growden, DF Storm, W Zhang, ER Brown, DJ Meyer, P Fakhimi, ...
Applied Physics Letters 109 (8), 2016
702016
Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures
TA Growden, W Zhang, ER Brown, DF Storm, DJ Meyer, PR Berger
Light: Science & Applications 7 (2), 17150-17150, 2018
642018
431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes
TA Growden, W Zhang, ER Brown, DF Storm, K Hansen, P Fakhimi, ...
Applied physics letters 112 (3), 2018
572018
Molecular beam epitaxy of transition metal nitrides for superconducting device applications
DS Katzer, N Nepal, MT Hardy, BP Downey, DF Storm, EN Jin, R Yan, ...
physica status solidi (a) 217 (3), 1900675, 2020
342020
Selective deuteron production using target normal sheath acceleration
JT Morrison, M Storm, E Chowdhury, KU Akli, S Feldman, C Willis, ...
Physics of Plasmas 19 (3), 2012
332012
Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes
TA Growden, DF Storm, EM Cornuelle, ER Brown, W Zhang, BP Downey, ...
Applied Physics Letters 116 (11), 2020
282020
930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template
TA Growden, EM Cornuelle, DF Storm, W Zhang, ER Brown, LM Whitaker, ...
Applied Physics Letters 114 (20), 2019
232019
Investigation of switching time in GaN/AlN resonant tunneling diodes by experiments and P-SPICE models
WD Zhang, TA Growden, DF Storm, DJ Meyer, PR Berger, ER Brown
IEEE Transactions on Electron Devices 67 (1), 75-79, 2019
202019
A nonlinear circuit simulation of switching process in resonant-tunneling diodes
WD Zhang, ER Brown, TA Growden, PR Berger, R Droopad
IEEE Transactions on Electron Devices 63 (12), 4993-4997, 2016
152016
Boron delta-doping dependence on Si/SiGe resonant interband tunneling diodes grown by chemical vapor deposition
A Ramesh, TA Growden, PR Berger, R Loo, W Vandervorst, B Douhard, ...
IEEE Transactions on electron Devices 59 (3), 602-609, 2012
152012
AlN/GaN/AlN resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy on freestanding GaN
DF Storm, TA Growden, W Zhang, ER Brown, N Nepal, DS Katzer, ...
Journal of Vacuum Science & Technology B 35 (2), 2017
142017
Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2
EM Cornuelle, TA Growden, DF Storm, ER Brown, W Zhang, BP Downey, ...
AIP Advances 10 (5), 2020
132020
Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time
TA Growden, ER Brown, W Zhang, R Droopad, PR Berger
Applied Physics Letters 107 (15), 2015
122015
Electroluminescence in Unipolar-Doped Resonant-Tunneling Diodes: A Competition between Interband Tunneling and Impact Ionization
ER Brown, WD Zhang, TA Growden, P Fakhimi, PR Berger
Physical Review Applied 16 (5), 054008, 2021
102021
Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire
DF Storm, TA Growden, EM Cornuelle, PR Peri, T Osadchy, JW Daulton, ...
Journal of Vacuum Science & Technology B 38 (3), 2020
82020
Fabrication and characterization of GaN/AlN resonant tunneling diodes
WD Zhang, TA Growden, ER Brown, PR Berger, DF Storm, DJ Meyer
High-Frequency GaN Electronic Devices, 249-281, 2020
72020
Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
EN Jin, BP Downey, VJ Gokhale, JA Roussos, MT Hardy, TA Growden, ...
APL Materials 9 (11), 2021
62021
Micro-transfer printing of GaN HEMTs for heterogeneous integration and flexible RF circuit design
BP Downey, A Xie, S Mack, DS Katzer, JG Champlain, Y Cao, N Nepal, ...
2020 Device Research Conference (DRC), 1-2, 2020
62020
Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures
ER Brown, W Zhang, T Growden, PR Berger, D Storm, D Meyer
US Patent 10,461,216, 2019
62019
Methods for attaining high interband tunneling current in III-Nitrides
TA Growden, S Krishnamoorthy, DN Nath, A Ramesh, S Rajan, PR Berger
70th Device Research Conference, 163-164, 2012
42012
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Makaleler 1–20