InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, T Fang, ...
IEEE Electron Device Letters 33 (7), 988-990, 2012
439 2012 AlGaN/GaN MOS-HEMT With Y Yue, Y Hao, J Zhang, J Ni, W Mao, Q Feng, L Liu
IEEE electron device letters 29 (8), 838-840, 2008
176 2008 Ultrascaled InAlN/GaN high electron mobility transistors with cutoff frequency of 400 GHz Y Yue, Z Hu, J Guo, B Sensale-Rodriguez, G Li, R Wang, F Faria, B Song, ...
Japanese Journal of Applied Physics 52 (8S), 08JN14, 2013
130 2013 Quaternary Barrier InAlGaN HEMTs With R Wang, G Li, G Karbasian, J Guo, B Song, Y Yue, Z Hu, O Laboutin, ...
IEEE electron device letters 34 (3), 378-380, 2013
81 2013 InGaN channel high-electron-mobility transistors with InAlGaN barrier and fT/fmax of 260/220 GHz R Wang, G Li, G Karbasian, J Guo, F Faria, Z Hu, Y Yue, J Verma, ...
Applied Physics Express 6 (1), 016503, 2012
57 2012 Ultrathin body GaN-on-insulator quantum well FETs with regrown ohmic contacts G Li, R Wang, J Guo, J Verma, Z Hu, Y Yue, F Faria, Y Cao, M Kelly, ...
IEEE electron device letters 33 (5), 661-663, 2012
57 2012 GaN MOS-HEMT using ultra-thin Al2O3 dielectric grown by atomic layer deposition Y Yuan-Zheng, H Yue, F Qian, Z Jin-Cheng, M Xiao-Hua, N Jin-Yu
Chinese Physics Letters 24 (8), 2419, 2007
55 2007 Effect of fringing capacitances on the RF performance of GaN HEMTs with T-gates B Song, B Sensale-Rodriguez, R Wang, J Guo, Z Hu, Y Yue, F Faria, ...
IEEE Transactions on Electron Devices 61 (3), 747-754, 2014
49 2014 A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress Y Yuan-Zheng, H Yue, Z Jin-Cheng, F Qian, N Jin-Yu, M Xiao-Hua
Chinese Physics B 17 (4), 1405, 2008
39 2008 Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs Z Hu, Y Yue, M Zhu, B Song, S Ganguly, J Bergman, D Jena, HG Xing
Applied Physics Express 7 (3), 031002, 2014
37 2014 Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition YZ Yue, Y Hao, Q Feng, JC Zhang, XH Ma, JY Ni
Science in China Series E: Technological Sciences 52 (9), 2762-2766, 2009
31 2009 Semiconductor devices with regrown contacts and methods of fabrication JH Huang, Y Yue
US Patent 10,403,718, 2019
19 2019 The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment F Qian, T Yuan, B Zhi-Wei, Y Yuan-Zheng, N Jin-Yu, Z Jin-Cheng, H Yue, ...
Chinese Physics B 18 (7), 3014, 2009
18 2009 Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing Y Yue, X Yan, W Li, HG Xing, D Jena, P Fay
Journal of Vacuum Science & Technology B 32 (6), 2014
17 2014 Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases Y Zhao, W Chen, W Li, M Zhu, Y Yue, B Song, J Encomendero, ...
Applied Physics Letters 105 (17), 2014
15 2014 AlGaN/GaN MOS-HEMT with stack gate HfO2/Al2O3 structure grown by atomic layer deposition YZ Yue, Y Hao, JC Zhang
2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 1-4, 2008
15 2008 The reduction of gate leakage of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors by N2 plasma pretreatment Q Feng, Y Hao, YZ Yue
Semiconductor science and technology 24 (2), 025030, 2009
13 2009 Semiconductor devices with regrown contacts and methods of fabrication JH Huang, Y Yue
US Patent 10,355,085, 2019
12 2019 Dispersion-free operation in InAlN-based HEMTs with ultrathin or no passivation R Wang, G Li, J Guo, B Song, J Verma, Z Hu, Y Yue, K Nomoto, ...
2013 IEEE International Electron Devices Meeting, 28.6. 1-28.6. 4, 2013
12 2013 Multi-nanolayered VO2 /Sapphire Thin Film via Spinodal Decomposition G Sun, X Cao, Y Yue, X Gao, S Long, N Li, R Li, H Luo, P Jin
Scientific Reports 8 (1), 5342, 2018
9 2018