Takip et
A.M. Ionescu
A.M. Ionescu
Professor of Nanoelectronics
epfl.ch üzerinde doğrulanmış e-posta adresine sahip - Ana Sayfa
Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
Tunnel field-effect transistors as energy-efficient electronic switches
AM Ionescu, H Riel
nature 479 (7373), 329-337, 2011
32162011
Double-Gate Tunnel FET With High-Gate Dielectric
K Boucart, AM Ionescu
IEEE transactions on electron devices 54 (7), 1725-1733, 2007
17932007
Effect of COVID-19 pandemic lockdowns on planned cancer surgery for 15 tumour types in 61 countries: an international, prospective, cohort study
J Glasbey, A Ademuyiwa, A Adisa, E AlAmeer, AP Arnaud, F Ayasra, ...
The Lancet Oncology 22 (11), 1507-1517, 2021
2842021
Length scaling of the double gate tunnel FET with a high-k gate dielectric
K Boucart, AM Ionescu
Solid-State Electronics 51 (11-12), 1500-1507, 2007
2592007
Metal-ferroelectric-meta-oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification
A Rusu, GA Salvatore, D Jimenez, AM Ionescu
2010 international electron devices meeting, 16.3. 1-16.3. 4, 2010
2512010
Suspended-gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor
N Abelé, R Fritschi, K Boucart, F Casset, P Ancey, AM Ionescu
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
2402005
Analytical modeling of single electron transistor for hybrid CMOS-SET analog IC design
S Mahapatra, V Vaish, C Wasshuber, K Banerjee, AM Ionescu
IEEE Transactions on Electron Devices 51 (11), 1772-1782, 2004
2192004
A new definition of threshold voltage in tunnel FETs
K Boucart, AM Ionescu
Solid-state electronics 52 (9), 1318-1323, 2008
1872008
Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO2 gate stack
GA Salvatore, D Bouvet, AM Ionescu
2008 IEEE International electron devices meeting, 1-4, 2008
1842008
Self-biased reconfigurable graphene stacks for terahertz plasmonics
JS Gomez-Diaz, C Moldovan, S Capdevila, J Romeu, LS Bernard, ...
Nature communications 6 (1), 6334, 2015
1752015
Structural, magnetic, electronic, and spin transport properties of epitaxial
A Ionescu, CAF Vaz, T Trypiniotis, CM Gürtler, H García-Miquel, ...
Physical Review B—Condensed Matter and Materials Physics 71 (9), 094401, 2005
1662005
Near optimal graphene terahertz non-reciprocal isolator
M Tamagnone, C Moldovan, JM Poumirol, AB Kuzmenko, AM Ionescu, ...
Nature communications 7 (1), 11216, 2016
1512016
CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology
P Dainesi, A Kung, M Chabloz, A Lagos, P Fluckiger, A Ionescu, P Fazan, ...
IEEE Photonics Technology Letters 12 (6), 660-662, 2000
1472000
TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model
A Biswas, SS Dan, C Le Royer, W Grabinski, AM Ionescu
Microelectronic Engineering 98, 334-337, 2012
1462012
Characterization of Ni thin films following thermal oxidation in air
L De Los Santos Valladares, A Ionescu, S Holmes, CHW Barnes, ...
Journal of Vacuum Science & Technology B 32 (5), 2014
1392014
Non-contact characterization of graphene surface impedance at micro and millimeter waves
JS Gomez-Diaz, J Perruisseau-Carrier, P Sharma, A Ionescu
Journal of Applied Physics 111 (11), 2012
1302012
Complementary germanium electron–hole bilayer tunnel FET for sub-0.5-V operation
L Lattanzio, L De Michielis, AM Ionescu
IEEE Electron Device Letters 33 (2), 167-169, 2011
1302011
Extended gate field-effect-transistor for sensing cortisol stress hormone
S Sheibani, L Capua, S Kamaei, SSA Akbari, J Zhang, H Guerin, ...
Communications materials 2 (1), 10, 2021
1272021
Nanowire transistors made easy
AM Ionescu
Nature nanotechnology 5 (3), 178-179, 2010
1262010
Understanding the superlinear onset of tunnel-FET output characteristic
L De Michielis, L Lattanzio, AM Ionescu
IEEE Electron Device Letters 33 (11), 1523-1525, 2012
1162012
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