Takip et
laurent ARTOLA
laurent ARTOLA
Senior II Research Engineer ONERA
onera.fr üzerinde doğrulanmış e-posta adresine sahip
Başlık
Alıntı yapanlar
Alıntı yapanlar
Yıl
Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation
G Hubert, L Artola, D Regis
Integration 50, 39-47, 2015
1342015
Impact of the radial ionization profile on SEE prediction for SOI transistors and SRAMs beyond the 32-nm technological node
M Raine, G Hubert, M Gaillardin, L Artola, P Paillet, S Girard, ...
IEEE Transactions on Nuclear Science 58 (3), 840-847, 2011
1152011
Modeling single event transients in advanced devices and ICs
L Artola, M Gaillardin, G Hubert, M Raine, P Paillet
IEEE Transactions on Nuclear Science 62 (4), 1528-1539, 2015
1022015
Single-event transient modeling in a 65-nm bulk CMOS technology based on multi-physical approach and electrical simulations
G Hubert, L Artola
IEEE Transactions on Nuclear Science 60 (6), 4421-4429, 2013
832013
SEU prediction from SET modeling using multi-node collection in bulk transistors and SRAMs down to the 65 nm technology node
L Artola, G Hubert, KM Warren, M Gaillardin, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 58 (3), 1338-1346, 2011
782011
Estimation of analog/RF figures-of-merit using device design engineering in gate stack double gate MOSFET
SK Mohapatra, KP Pradhan, L Artola, PK Sahu
Materials Science in Semiconductor Processing 31, 455-462, 2015
612015
Analyzing the influence of the angles of incidence and rotation on MBU events induced by low LET heavy ions in a 28-nm SRAM-based FPGA
J Tonfat, FL Kastensmidt, L Artola, G Hubert, NH Medina, N Added, ...
IEEE Transactions on Nuclear Science 64 (8), 2161-2168, 2017
52*2017
Continuous high-altitude measurements of cosmic ray neutrons and SEU/MCU at various locations: correlation and analyses based on MUSCA SEP3
G Hubert, R Velazco, CA Federico, A Cheminet, CS Cardenas, LV Caldas, ...
Proc. of Radiation Effects on Components and Systems (RADECS'12), 2012
492012
Collected charge analysis for a new transient model by TCAD simulation in 90 nm technology
L Artola, G Hubert, S Duzellier, F Bezerra
IEEE Transactions on Nuclear Science 57 (4), 1869-1875, 2010
482010
Modeling of radiation-induced single event transients in SOI FinFETS
L Artola, G Hubert, RD Schrimpf
2013 IEEE international reliability physics symposium (irps), SE. 1.1-SE. 1.6, 2013
462013
Impact of different transistor arrangements on gate variability
AL Zimpeck, C Meinhardt, L Artola, G Hubert, FL Kastensmidt, RAL Reis
Microelectronics Reliability 88, 111-115, 2018
312018
Effect of the radial ionization profile of proton on SEU sensitivity of nanoscale SRAMs
G Hubert, PL Cavoli, C Federico, L Artola, J Busto
IEEE Transactions on Nuclear Science 62 (6), 2837-2845, 2015
302015
Single-event latchup modeling based on coupled physical and electrical transient simulations in CMOS technology
L Artola, G Hubert, T Rousselin
IEEE Transactions on Nuclear Science 61 (6), 3543-3549, 2014
292014
Comparative soft error evaluation of layout cells in FinFET technology
L Artola, G Hubert, M Alioto
Microelectronics Reliability 54 (9-10), 2300-2305, 2014
292014
In flight SEU/MCU sensitivity of commercial nanometric SRAMs: Operational estimations
L Artola, R Velazco, G Hubert, S Duzellier, T Nuns, B Guerard, ...
IEEE Transactions on Nuclear Science 58 (6), 2644-2651, 2011
292011
Physical mechanisms inducing electron single-event upset
P Caron, C Inguimbert, L Artola, N Chatry, N Sukhaseum, R Ecoffet, ...
IEEE Transactions on Nuclear Science 65 (8), 1759-1767, 2018
282018
Physical mechanisms of proton-induced single-event upset in integrated memory devices
P Caron, C Inguimbert, L Artola, R Ecoffet, F Bezerra
IEEE Transactions on Nuclear Science 66 (7), 1404-1409, 2019
262019
Investigation of electrical latchup and SEL mechanisms at low temperature for applications down to 50 K
A Al Youssef, L Artola, S Ducret, G Hubert, F Perrier
IEEE transactions on nuclear science 64 (8), 2089-2097, 2017
26*2017
Evaluation of radiation-induced soft error in majority voters designed in 7 nm FinFET technology
YQ De Aguiar, L Artola, G Hubert, C Meinhardt, FL Kastensmidt, RAL Reis
Microelectronics Reliability 76, 660-664, 2017
252017
Analysis of Angular Dependence of Single-Event Latchup Sensitivity for Heavy-Ion Irradiations of CMOS Technology
L Artola, NJH Roche, G Hubert, A Al Youssef, A Khachatrian, P McMarr, ...
IEEE Transactions on Nuclear Science 62 (6), 2539-2546, 2015
252015
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