Daniel M. Fleetwood

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Finansman sağlayan kuruluşun getirdiği zorunluluğa dayalı olarak

Katkıda bulunan yazarlar

Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt Universityvanderbilt.edu üzerinde doğrulanmış e-posta adresine sahip
Enxia ZhangUniversity of Central Floridaucf.edu üzerinde doğrulanmış e-posta adresine sahip
Michael AllesVanderbilt Universityvanderbilt.edu üzerinde doğrulanmış e-posta adresine sahip
Robert A. WellerVanderbilt Universityvanderbilt.edu üzerinde doğrulanmış e-posta adresine sahip
Sergey RashkeevPrincipal Scientist, Acting Research Director, Qatar Environment & Energy Research Instituteqf.org.qa üzerinde doğrulanmış e-posta adresine sahip
Dimitri LintenImecimec.be üzerinde doğrulanmış e-posta adresine sahip
Yevgeniy PuzyrevData & Applied Scientist, Microsoftmicrosoft.com üzerinde doğrulanmış e-posta adresine sahip
blair tuttlePenn State Erie; The Behrend Collegepsu.edu üzerinde doğrulanmış e-posta adresine sahip
John D. CresslerRegents Professor, School of Electrical and Computer Engineering Georgia Techece.gatech.edu üzerinde doğrulanmış e-posta adresine sahip
Xiao ShenAssociate Professor of Physics, University of Memphismemphis.edu üzerinde doğrulanmış e-posta adresine sahip
Jim SpeckProfessor of Materials, UCSBucsb.edu üzerinde doğrulanmış e-posta adresine sahip
Tania RoyDuke Universityduke.edu üzerinde doğrulanmış e-posta adresine sahip
John H. ScofieldProfessor of Physics, Oberlin Collegeoberlin.edu üzerinde doğrulanmış e-posta adresine sahip
Umesh MishraUCSBece.ucsb.edu üzerinde doğrulanmış e-posta adresine sahip
Lloyd MassengillVanderbilt Universityvanderbilt.edu üzerinde doğrulanmış e-posta adresine sahip
Matthew BeckChemical and Materials Engineering, University of Kentuckyengr.uky.edu üzerinde doğrulanmış e-posta adresine sahip
Leonard BrillsonThe Ohio State Universityosu.edu üzerinde doğrulanmış e-posta adresine sahip
jean-luc lerayanaxagoras2kanaxagoras2k.fr üzerinde doğrulanmış e-posta adresine sahip
cher xuan zhangIntel

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Daniel M. Fleetwood

Professor of Electrical Engineering, Vanderbilt University

vanderbilt.edu üzerinde doğrulanmış e-posta adresine sahip - Ana Sayfa

radiation effects defects microelectronics low frequency noise


Başlık Alıntılara göre sırala Yıla göre sırala Başlığa göre sırala	Alıntı yapanlar Alıntı yapanlar	Yıl
Radiation effects in MOS oxides JR Schwank, MR Shaneyfelt, DM Fleetwood, JA Felix, PE Dodd, P Paillet, ... IEEE Transactions on Nuclear Science 55 (4), 1833-1853, 2008	1066	2008
Effects of oxide traps, interface traps, and ‘‘border traps’’on metal‐oxide‐semiconductor devices DM Fleetwood, PS Winokur, RA Reber Jr, TL Meisenheimer, JR Schwank, ... Journal of applied physics 73 (10), 5058-5074, 1993	628	1993
'Border traps' in MOS devices DM Fleetwood IEEE transactions on nuclear science 39 (2), 269-271, 1992	491	1992
Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices DM Fleetwood IEEE Transactions on Nuclear Science 60 (3), 1706-1730, 2013	415	2013
Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ... IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994	379	1994
Physical model for enhanced interface-trap formation at low dose rates SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ... IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002	297	2002
1/f noise and radiation effects in MOS devices DM Fleetwood, TL Meisenheimer, JH Scofield IEEE Transactions on Electron Devices 41 (11), 1953-1964, 1994	272	1994
Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices MR Shaneyfelt, DM Fleetwood, JR Schwank, KL Hughes IEEE transactions on nuclear science 38 (6), 1187-1194, 1991	268	1991
Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments DM Fleetwood, PS Winokur, JR Schwank IEEE transactions on nuclear science 35 (6), 1497-1505, 1988	266	1988
Defect generation by hydrogen at the Si-SiO 2 interface SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 87 (16), 165506, 2001	250	2001
An overview of high-temperature electronic device technologies and potential applications PL Dreike, DM Fleetwood, DB King, DC Sprauer, TE Zipperian IEEE Transactions on Components, Packaging, and Manufacturing Technology …, 1994	248	1994
Charge separation for bipolar transistors SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ... IEEE transactions on nuclear science 40 (6), 1276-1285, 1993	241	1993
ELDRS in bipolar linear circuits: A review RL Pease, RD Schrimpf, DM Fleetwood IEEE Transactions on Nuclear Science 56 (4), 1894-1908, 2009	240	2009
Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 89 (28), 285505, 2002	240	2002
Border traps: Issues for MOS radiation response and long-term reliability DM Fleetwood, MR Shaneyfelt, WL Warren, JR Schwank, ... Microelectronics Reliability 35 (3), 403-428, 1995	230	1995
1/f noise and defects in microelectronic materials and devices DM Fleetwood IEEE Transactions on Nuclear Science 62 (4), 1462-1486, 2015	224	2015
Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ... IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002	215	2002
Evolution of total ionizing dose effects in MOS devices with Moore’s law scaling DM Fleetwood IEEE Transactions on Nuclear Science 65 (8), 1465-1481, 2017	213	2017
Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors DM Fleetwood, JH Scofield Physical review letters 64 (5), 579, 1990	207	1990
Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors X Hu, AP Karmarkar, B Jun, DM Fleetwood, RD Schrimpf, RD Geil, ... IEEE Transactions on Nuclear Science 50 (6), 1791-1796, 2003	205	2003

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