| Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ... Advanced Materials 35 (43), 2204904, 2023 | 103 | 2023 |
| Neuromorphic devices based on fluorite‐structured ferroelectrics DH Lee, GH Park, SH Kim, JY Park, K Yang, S Slesazeck, T Mikolajick, ... InfoMat 4 (12), e12380, 2022 | 34 | 2022 |
| Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ... Acta Materialia 222, 117405, 2022 | 28 | 2022 |
| Engineering strategies in emerging fluorite-structured ferroelectrics JY Park, DH Lee, K Yang, SH Kim, GT Yu, GH Park, EB Lee, KH Kim, ... ACS Applied Electronic Materials 4 (4), 1369-1380, 2021 | 19 | 2021 |
| Interfacial engineering of a Mo/Hf 0.3 Zr 0.7 O 2/Si capacitor using the direct scavenging effect of a thin Ti layer SH Kim, GT Yu, GH Park, DH Lee, JY Park, K Yang, EB Lee, JI Lee, ... Chemical Communications 57 (93), 12452-12455, 2021 | 19 | 2021 |
| Wake-up-mitigated giant ferroelectricity in Hf0. 5Zr0. 5O2 thin films through oxygen-providing, surface-oxidized W electrode K Yang, GY Kim, JJ Ryu, DH Lee, JY Park, SH Kim, GH Park, GT Yu, ... Materials Science in Semiconductor Processing 164, 107565, 2023 | 13 | 2023 |
| A perspective on the physical scaling down of hafnia-based ferroelectrics JY Park, DH Lee, GH Park, J Lee, Y Lee, MH Park Nanotechnology 34 (20), 202001, 2023 | 13 | 2023 |
| Perspective on ferroelectric devices: lessons from interfacial chemistry K Yang, SH Kim, HW Jeong, DH Lee, GH Park, Y Lee, MH Park Chemistry of Materials 35 (6), 2219-2237, 2023 | 13 | 2023 |
| Energy conversion and storage using artificially induced antiferroelectricity in HfO2/ZrO2 nanolaminates K Yang, EB Lee, DH Lee, JY Park, SH Kim, GH Park, GT Yu, JI Lee, ... Composites Part B: Engineering 236, 109824, 2022 | 12 | 2022 |
| Emerging fluorite-structured antiferroelectrics and their semiconductor applications GH Park, DH Lee, H Choi, T Kwon, YH Cho, SH Kim, MH Park ACS Applied Electronic Materials 5 (2), 642-663, 2023 | 10 | 2023 |
| Mitigation of field-driven dynamic phase evolution in ferroelectric Hf0. 5Zr0. 5O2 films by adopting oxygen-supplying electrode Y Lee, SH Kim, HW Jeong, GH Park, J Lee, YY Kim, MH Park Applied Surface Science 648, 158948, 2024 | 8 | 2024 |
| Effect of Electrode Material on the Polarization Switching Kinetics of Hf0.5Zr0.5O2 film DH Lee, GH Park, SH Kim, K Yang, J Lee, H Choi, Y Lee, JJ Ryu, JI Lee, ... IEEE Electron Device Letters, 2023 | 4 | 2023 |
| Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics (Adv. Mater. 43/2023) JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ... Advanced Materials 35 (43), 2370312, 2023 | 1 | 2023 |
| Review of the mechanism for Ferroelectric Phase Formation in Fluorite-structure Oxide GT Yu, GH Park, EB Lee, MH Park New Physics: Sae Mulli 71 (11), 890-900, 2021 | 1 | 2021 |
| Depolarization mitigated in ferroelectric Hf0.5Zr0.5O2 ultrathin films (< 5 nm) on Si substrate by interface engineering. SH Kim, Y Lee, DH Lee, GH Park, HW Jeong, K Yang, YH Cho, YY Kim, ... Journal of Advanced Ceramics 13 (3), 2024 | | 2024 |
| A fluorite-structured HfO 2/ZrO 2/HfO 2 superlattice based self-rectifying ferroelectric tunnel junction synapse DH Lee, JE Kim, YH Cho, S Kim, GH Park, H Choi, SY Lee, T Kwon, ... Materials Horizons 11 (21), 5251-5264, 2024 | | 2024 |
| Semiconductor device J Kyooho, MH Park, LIM HanJin, GH Park, JY Park US Patent App. 17/988,135, 2023 | | 2023 |
| Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films (vol 222, 117405, 2022) DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ... ACTA MATERIALIA 247, 2023 | | 2023 |
| Corrigendum to’Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0. 5Zr0. 5O2 thin films’[Acta Materialia 222 (2022 … DH Lee, GT Yu, JY Park, SH Kim, K Yang, GH Park, JJ Ryu, JI Lee, ... Acta Materialia 247, 118732, 2023 | | 2023 |
| Correction: Interfacial engineering of a Mo/Hf 0.3 Zr 0.7 O 2/Si capacitor using the direct scavenging effect of a thin Ti layer SH Kim, GT Yu, GH Park, DH Lee, JY Park, K Yang, EB Lee, JI Lee, ... Chemical Communications 59 (18), 2668-2668, 2023 | | 2023 |
