B. Gunnar Malm

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Katkıda bulunan yazarlar

Mikael ÖstlingKTH Royal Institute of Technologykth.se üzerinde doğrulanmış e-posta adresine sahip
Carl-Mikael ZetterlingKTHkth.se üzerinde doğrulanmış e-posta adresine sahip
Per-Erik HellströmKTH Royal Institute of Technologykth.se üzerinde doğrulanmış e-posta adresine sahip
Johan ÅkermanProfessor of Experimental Physics (spintronics), University of Gothenburgphysics.gu.se üzerinde doğrulanmış e-posta adresine sahip
Anders EklundResearch Scientist - SINTEFsintef.no üzerinde doğrulanmış e-posta adresine sahip
Luigia LanniKTH Royal Institute of Technologyintel.com üzerinde doğrulanmış e-posta adresine sahip
Ana RusuProfessor of Electronic Circuits and Systems, KTH Royal Institute of Technology, EECS Schoolkth.se üzerinde doğrulanmış e-posta adresine sahip
Reza GhandiPrincipal Engineer at GE Aerospace Researchge.com üzerinde doğrulanmış e-posta adresine sahip
Saul RodriguezAssociate Professor, KTH Royal Institute of Technology, Swedenkth.se üzerinde doğrulanmış e-posta adresine sahip
Tingsu Chenkth.se üzerinde doğrulanmış e-posta adresine sahip
Mohammadreza KolahdouzUniversity of Tehranut.ac.ir üzerinde doğrulanmış e-posta adresine sahip
Sohrab Redjai SaniPhD from KTH Royal Institute of Technologykth.se üzerinde doğrulanmış e-posta adresine sahip
Majid MohseniDepartment of Physics, Shahid Beheshti Universitysbu.ac.ir üzerinde doğrulanmış e-posta adresine sahip
Randy K. DumasQuantum Design Inc.qdusa.com üzerinde doğrulanmış e-posta adresine sahip
Frank NiklausProfessor of Micro and Nanosystems at KTH Royal Institute of Technology, Stockholm, Swedenkth.se üzerinde doğrulanmış e-posta adresine sahip
Prof. Pranaba Kishor MuduliProfessor of Physics at Indian Institute of Technology, Delhiphysics.iitd.ac.in üzerinde doğrulanmış e-posta adresine sahip
Philipp DürrenfeldAdvanced Energy Industriesaei.com üzerinde doğrulanmış e-posta adresine sahip
Lyubov BelovaProfessor, Royal Institute of Technologykth.se üzerinde doğrulanmış e-posta adresine sahip
Kristinn B. GylfasonProfessor, Micro and Nanosystems, KTH Royal Institute of Technologykth.se üzerinde doğrulanmış e-posta adresine sahip
Ted JohanssonDocent, Associate Professor, Solid-State Electronics, Dept. of EE, Uppsala Universityangstrom.uu.se üzerinde doğrulanmış e-posta adresine sahip

Takip et

B. Gunnar Malm

Professor in Integrated Devices and Circuits, KTH Royal Institute of Technology

kth.se üzerinde doğrulanmış e-posta adresine sahip - Ana Sayfa

Semiconductor and Spintronic Device Physics Extreme Environment Electronics


Başlık Alıntılara göre sırala Yıla göre sırala Başlığa göre sırala	Alıntı yapanlar Alıntı yapanlar	Yıl
Spin-torque and spin-Hall nano-oscillators T Chen, RK Dumas, A Eklund, PK Muduli, A Houshang, AA Awad, ... Proceedings of the IEEE 104 (10), 1919-1945, 2016	418	2016
The VLSI handbook WK Chen CRC press, 1999	305	1999
Mutually synchronized bottom-up multi-nanocontact spin–torque oscillators S Sani, J Persson, SM Mohseni, Y Pogoryelov, PK Muduli, A Eklund, ... Nature communications 4 (1), 2731, 2013	149	2013
500Bipolar Integrated OR/NOR Gate in 4H-SiC L Lanni, BG Malm, M Östling, CM Zetterling IEEE Electron Device Letters 34 (9), 1091-1093, 2013	116	2013
A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology R Hedayati, L Lanni, S Rodriguez, BG Malm, A Rusu, CM Zetterling IEEE Electron Device Letters 35 (7), 693-695, 2014	98	2014
High-voltage 4H-SiC PiN diodes with etched junction termination extension R Ghandi, B Buono, M Domeij, G Malm, CM Zetterling, M Ostling IEEE Electron Device Letters 30 (11), 1170-1172, 2009	87	2009
Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 57 (3), 704-711, 2010	77	2010
Direct observation and imaging of a spin-wave soliton with p-like symmetry S Bonetti, R Kukreja, Z Chen, F Macià, JM Hernàndez, A Eklund, ... Nature communications 6 (1), 8889, 2015	74	2015
Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 59 (4), 1076-1083, 2012	67	2012
Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/gate dielectrics and TiN gate M von Haartman, BG Malm, M Ostling IEEE transactions on electron devices 53 (4), 836-843, 2006	53	2006
1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/pMOSFETs M von Haartman, AC Lindgren, PE Hellstrom, BG Malm, SL Zhang, ... IEEE Transactions on Electron Devices 50 (12), 2513-2519, 2003	50	2003
Bipolar integrated circuits in SiC for extreme environment operation CM Zetterling, A Hallén, R Hedayati, S Kargarrazi, L Lanni, BG Malm, ... Semiconductor Science and Technology 32 (3), 034002, 2017	46	2017
SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation Z Zhang, Z Qiu, PE Hellstrom, G Malm, J Olsson, J Lu, M Ostling, ... IEEE electron device letters 29 (1), 125-127, 2007	46	2007
Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator J Seger, PE Hellström, J Lu, BG Malm, M von Haartman, M Östling, ... Applied Physics Letters 86 (25), 2005	46	2005
A robust spacer gate process for deca-nanometer high-frequency MOSFETs J Hållstedt, PE Hellström, Z Zhang, BG Malm, J Edholm, J Lu, SL Zhang, ... Microelectronic Engineering 83 (3), 434-439, 2006	42	2006
Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field A Eklund, S Bonetti, SR Sani, S Majid Mohseni, J Persson, S Chung, ... Applied Physics Letters 104 (9), 2014	41	2014
3D Free‐Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching AC Fischer, LM Belova, YGM Rikers, BG Malm, HH Radamson, ... Advanced Functional Materials 22 (19), 4004-4008, 2012	41	2012
A 600° C TTL-based 11-stage ring oscillator in bipolar silicon carbide technology M Shakir, S Hou, BG Malm, M Östling, CM Zetterling IEEE Electron Device Letters 39 (10), 1540-1543, 2018	36	2018
Influence of emitter width and emitter–base distance on the current gain in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Östling IEEE transactions on electron devices 57 (10), 2664-2670, 2010	36	2010
A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget JV Grahn, H Fosshaug, M Jargelius, P Jönsson, M Linder, BG Malm, ... Solid-State Electronics 44 (3), 549-554, 2000	36	2000

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