Matthew T. Hardy

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	Hepsi	2020 yılından bugüne
Alıntılar	4206	1822
h-endeksi	29	19
i10-endeksi	50	35

380

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285

20082009201020112012201320142015201620172018201920202021202220232024202540 81 130 140 203 266 181 237 265 277 263 287 377 324 311 377 346 87

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4 makale

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Finansman sağlayan kuruluşun getirdiği zorunluluğa dayalı olarak

Katkıda bulunan yazarlar

D S KatzerUS Naval Research Laboratorynrl.navy.mil üzerinde doğrulanmış e-posta adresine sahip
David J. MeyerNaval Research Laboratorynrl.navy.mil üzerinde doğrulanmış e-posta adresine sahip
Neeraj NepalUS Naval Research Laboratorynrl.navy.mil üzerinde doğrulanmış e-posta adresine sahip
Steven DenBaarsProfessor of Materials, University of California Santa Barbaraengineering.ucsb.edu üzerinde doğrulanmış e-posta adresine sahip
Brian P DowneyUS Naval Research Laboratorynrl.navy.mil üzerinde doğrulanmış e-posta adresine sahip
Jim SpeckProfessor of Materials, UCSBucsb.edu üzerinde doğrulanmış e-posta adresine sahip
Eric N. JinResearch Physicist at U.S. Naval Research Laboratorynrl.navy.mil üzerinde doğrulanmış e-posta adresine sahip
Kate M Kelchner, PhDMeta Reality Labsece.ucsb.edu üzerinde doğrulanmış e-posta adresine sahip
Vikrant GokhaleUS Naval Research Laboratory | NIST | University of Michigannrl.navy.mil üzerinde doğrulanmış e-posta adresine sahip
Virginia WheelerNRLnrl.navy.mil üzerinde doğrulanmış e-posta adresine sahip
Daniel FeezellUniversity of New Mexicounm.edu üzerinde doğrulanmış e-posta adresine sahip
Chia-Yen HuangNational Yang Ming Chiao Tung University, Department of Photonicsnycu.edu.tw üzerinde doğrulanmış e-posta adresine sahip
Robert M. FarrellAssistant Professor, ECE Department, University of Wisconsin–Madisonwisc.edu üzerinde doğrulanmış e-posta adresine sahip
Ingrid KoslowMaterials Department, University of California Santa Barbaraumail.ucsb.edu üzerinde doğrulanmış e-posta adresine sahip
Erin C. YoungUniversity of California, Santa Barbaraengineering.ucsb.edu üzerinde doğrulanmış e-posta adresine sahip
Dan HaegerAppleapple.com üzerinde doğrulanmış e-posta adresine sahip
Aleksei RomanovITMO Universityniuitmo.ru üzerinde doğrulanmış e-posta adresine sahip
Andrew C. LangMaterials Research Engineer - US Naval Research Laboratorynrl.navy.mil üzerinde doğrulanmış e-posta adresine sahip
John A. RogersSimpson/Querrey Professor, Northwestern Universitynorthwestern.edu üzerinde doğrulanmış e-posta adresine sahip
Thomas Oscar McConkieThe Design Knowlege Companytdkc.com üzerinde doğrulanmış e-posta adresine sahip

Takip et

Matthew T. Hardy

Electronics Science and Technology Division, Naval Research Laboratory

nrl.navy.mil üzerinde doğrulanmış e-posta adresine sahip

millimeter wave devices epitaxial growth GaN scandium aluminum nitride


Başlık Alıntılara göre sırala Yıla göre sırala Başlığa göre sırala	Alıntı yapanlar Alıntı yapanlar	Yıl
High-resolution electrohydrodynamic jet printing JU Park, M Hardy, SJ Kang, K Barton, K Adair, DK Mukhopadhyay, ... Nature materials 6 (10), 782-789, 2007	1733	2007
Superluminescent diodes by crystallographic etching MT Hardy, YD Lin, H Ohta, SP DenBaars, JS Speck, S Nakamura, ... US Patent App. 12/913,638, 2011	258	2011
Group III-nitride lasers: a materials perspective MT Hardy, DF Feezell, SP DenBaars, S Nakamura Materials Today 14 (9), 408-415, 2011	197	2011
Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates MT Hardy, BP Downey, N Nepal, DF Storm, DS Katzer, DJ Meyer Applied Physics Letters 110 (16), 2017	157	2017
AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm A Tyagi, RM Farrell, KM Kelchner, CY Huang, PS Hsu, DA Haeger, ...	119	2010
Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate YD Lin, MT Hardy, PS Hsu, KM Kelchner, CY Huang, DA Haeger, ... Applied physics express 2 (8), 082102, 2009	81	2009
444.9 nm semipolar (112¯ 2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer P Shan Hsu, MT Hardy, F Wu, I Koslow, EC Young, AE Romanov, K Fujito, ... Applied Physics Letters 100 (2), 2012	78	2012
Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy MT Hardy, EN Jin, N Nepal, DS Katzer, BP Downey, VJ Gokhale, ... Applied Physics Express 13 (6), 065509, 2020	68	2020
Performance and polarization effects in (112 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers IL Koslow, MT Hardy, P Shan Hsu, PY Dang, F Wu, A Romanov, YR Wu, ... Applied Physics Letters 101 (12), 2012	65	2012
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes MT Hardy, CO Holder, DF Feezell, S Nakamura, JS Speck, DA Cohen, ... Applied Physics Letters 103 (8), 2013	63	2013
Epitaxial lift-off and transfer of III-N materials and devices from SiC substrates DJ Meyer, BP Downey, DS Katzer, N Nepal, VD Wheeler, MT Hardy, ... IEEE Transactions on Semiconductor Manufacturing 29 (4), 384-389, 2016	62	2016
Nonpolar AlGaN-cladding-free blue laser diodes with InGaN waveguiding KM Kelchner, YD Lin, MT Hardy, CY Huang, PS Hsu, RM Farrell, ... Applied Physics Express 2 (7), 071003, 2009	60	2009
Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates DS Katzer, N Nepal, DJ Meyer, BP Downey, VD Wheeler, DF Storm, ... Applied Physics Express 8 (8), 085501, 2015	56	2015
Stress relaxation and critical thickness for misfit dislocation formation in (10-10) and (30-3-1) InGaN/GaN heteroepitaxy PS Hsu, MT Hardy, EC Young, AE Romanov, SP DenBaars, S Nakamura, ... APPLIED PHYSICS LETTERS 100, 171917, 2012	56	2012
Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy N Nepal, DS Katzer, BP Downey, VD Wheeler, LO Nyakiti, DF Storm, ... Journal of Vacuum Science & Technology A 38 (6), 2020	55	2020
Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202 1) GaN substrates A Pourhashemi, RM Farrell, MT Hardy, PS Hsu, KM Kelchner, JS Speck, ... Applied Physics Letters 103 (15), 2013	53	2013
Epitaxial ScAlN etch-stop layers grown by molecular beam epitaxy for selective etching of AlN and GaN MT Hardy, BP Downey, DJ Meyer, N Nepal, DF Storm, DS Katzer IEEE Transactions on Semiconductor Manufacturing 30 (4), 475-479, 2017	52	2017
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021) InGaN/GaN quantum wells CY Huang, MT Hardy, K Fujito, DF Feezell, JS Speck, SP DenBaars, ... Applied Physics Letters 99 (24), 2011	52	2011
Trace analysis of non-basal plane misfit stress relaxation in (20-21) and (30-3-1) semipolar InGaN/GaN heterostructures MT Hardy, PS Hsu, F Wu, IL Koslow, EC Young, S Nakamura, ... Applied Physics Letters 100 (20), 202103-202103-4, 2012	51	2012
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates DF Storm, MT Hardy, DS Katzer, N Nepal, BP Downey, DJ Meyer, ... Journal of Crystal Growth 456, 121-132, 2016	48	2016

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