| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1447 | 2018 |
| Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy MJ Paisley, Z Sitar, JB Posthill, RF Davis Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989 | 502 | 1989 |
| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 483 | 2020 |
| Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ... Materials Science and Engineering: B 1 (1), 77-104, 1988 | 285 | 1988 |
| Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar physica status solidi c 8 (7‐8), 2031-2033, 2011 | 213 | 2011 |
| Universal phonon mean free path spectra in crystalline semiconductors at high temperature JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis, JA Malen Scientific reports 3 (1), 2963, 2013 | 194 | 2013 |
| On the origin of the 265 nm absorption band in AlN bulk crystals R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ... Applied Physics Letters 100 (19), 2012 | 190 | 2012 |
| Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ... Journal of The Electrochemical Society 158 (5), H530, 2011 | 179 | 2011 |
| High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo Applied Physics Letters 106 (14), 2015 | 171 | 2015 |
| Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides I Bryan, Z Bryan, S Mita, A Rice, J Tweedie, R Collazo, Z Sitar Journal of Crystal Growth 438, 81-89, 2016 | 168 | 2016 |
| Seeded growth of AlN bulk crystals in m-and c-orientation P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ... Journal of Crystal Growth 312 (1), 58-63, 2009 | 167 | 2009 |
| Seeded growth of AlN bulk single crystals by sublimation R Schlesser, R Dalmau, Z Sitar Journal of crystal growth 241 (4), 416-420, 2002 | 165 | 2002 |
| Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ... Applied Physics Express 5 (5), 055504, 2012 | 159 | 2012 |
| Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy Z Sitar, MJ Paisley, B Yan, J Ruan, WJ Choyke, RF Davis Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990 | 158 | 1990 |
| Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar Journal of Applied Physics 108 (4), 2010 | 157 | 2010 |
| Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ... Applied Physics Express 5 (12), 122101, 2012 | 155 | 2012 |
| Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, T Obata, T Nagashima, H Yanagi, B Moody, S Mita, S Inoue, ... Applied Physics Express 6 (9), 092103, 2013 | 151 | 2013 |
| On compensation in Si-doped AlN JS Harris, JN Baker, BE Gaddy, I Bryan, Z Bryan, KJ Mirrielees, P Reddy, ... Applied Physics Letters 112 (15), 2018 | 148 | 2018 |
| The role of surface kinetics on composition and quality of AlGaN I Bryan, Z Bryan, S Mita, A Rice, L Hussey, C Shelton, J Tweedie, ... Journal of Crystal Growth 451, 65-71, 2016 | 147 | 2016 |
| Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD I Bryan, Z Bryan, S Washiyama, P Reddy, B Gaddy, B Sarkar, ... Applied Physics Letters 112 (6), 2018 | 146 | 2018 |
Ramon CollazoProfessor of Materials Science and Engineering, NCSUยืนยันอีเมลแล้วที่ ncsu.edu
