บทความที่มีข้อกำหนดการเข้าถึงสาธารณะ - Pezoldtดูข้อมูลเพิ่มเติม
ไม่มีให้ใช้งานในทุกที่: 31
Nanoelectromechanical devices for sensing applications
V Cimalla, F Niebelschütz, K Tonisch, C Foerster, K Brueckner, I Cimalla, ...
Sensors and Actuators B: Chemical 126 (1), 24-34, 2007
ข้อกำหนด: German Research Foundation
High-frequency performance of GaN high-electron mobility transistors on 3C-SiC/Si substrates with Au-free ohmic contacts
W Jatal, U Baumann, K Tonisch, F Schwierz, J Pezoldt
IEEE Electron device letters 36 (2), 123-125, 2014
ข้อกำหนด: German Research Foundation
Efficient fabrication of MoS 2 nanocomposites by water-assisted exfoliation for nonvolatile memories
H Wang, P Cheng, J Shi, D Wang, H Wang, J Pezoldt, M Stich, R Chen, ...
Green Chemistry 23 (10), 3642-3648, 2021
ข้อกำหนด: National Natural Science Foundation of China, German Research Foundation …
Polarity determination and control of SiC grown on Si
J Pezoldt, T Kups, T Stauden, B Schröter
Materials Science and Engineering: B 165 (1-2), 28-33, 2009
ข้อกำหนด: German Research Foundation
Investigation of epitaxial graphene via Raman spectroscopy: Origins of phonon mode asymmetries and line width deviations
B Hähnlein, SP Lebedev, IA Eliseyev, AN Smirnov, VY Davydov, ...
Carbon 170, 666-676, 2020
ข้อกำหนด: German Research Foundation
Stress-adaptive meander track for stretchable electronics
S Biswas, J Reiprich, J Pezoldt, M Hein, T Stauden, HO Jacobs
Flexible and Printed Electronics 3 (3), 032001, 2018
ข้อกำหนด: German Research Foundation
Temperature facilitated ECR-etching for isotropic SiC structuring
F Niebelschütz, T Stauden, K Tonisch, J Pezoldt
Materials Science Forum 645, 849-852, 2010
ข้อกำหนด: German Research Foundation
Localized and programmable chemical vapor deposition using an electrically charged and guided molecular flux
J Reiprich, NA Isaac, L Schlag, T Kups, M Hopfeld, G Ecke, T Stauden, ...
ACS nano 14 (10), 12885-12894, 2020
ข้อกำหนด: German Research Foundation
Corona discharge assisted growth morphology switching of tin-doped gallium oxide for optical gas sensing applications
J Reiprich, NA Isaac, L Schlag, M Hopfeld, G Ecke, T Stauden, J Pezoldt, ...
Crystal Growth & Design 19 (12), 6945-6953, 2019
ข้อกำหนด: German Research Foundation
2D electronics-opportunities and limitations
Z Geng, W Kinberger, R Granzner, J Pezoldt, F Schwierz
2016 46th European Solid-State Device Research Conference (ESSDERC), 230-235, 2016
ข้อกำหนด: German Research Foundation
Tuning residual stress in 3C-SiC (100) on Si (100)
J Pezoldt, T Stauden, F Niebelschütz, MA Alsioufy, R Nader, PM Masri
Materials Science Forum 645, 159-162, 2010
ข้อกำหนด: German Research Foundation
Performance Modification of SiC MEMS
F Niebelschütz, K Brueckner, V Cimalla, MA Hein, J Pezoldt
Materials Science Forum 615, 621-624, 2009
ข้อกำหนด: German Research Foundation
Isotropic dry-etching of SiC for AlGaN/GaN MEMS fabrication
F Niebelschutz, J Pezoldt, T Stauden, V Cimalla, K Tonisch, K Bruckner, ...
2008 Conference on Optoelectronic and Microelectronic Materials and Devices …, 2008
ข้อกำหนด: German Research Foundation
Metamorphic stretchable touchpad
S Biswas, J Reiprich, J Pezoldt, T Stauden, HO Jacobs
Advanced Materials Technologies 4 (4), 1800446, 2019
ข้อกำหนด: German Research Foundation
Corona assisted gallium oxide nanowire growth on silicon carbide
J Reiprich, T Kups, L Schlag, NA Isaac, S Biswas, J Breiling, P Schaaf, ...
Journal of Crystal Growth 509, 107-111, 2019
ข้อกำหนด: German Research Foundation
Localized collection of airborne biological hazards for environmental monitoring
J Reiprich, M Gebinoga, LP Traue, L Schlag, S Biswas, M Kaltwasser, ...
Sensors and Actuators B: Chemical 273, 906-915, 2018
ข้อกำหนด: German Research Foundation
High temperature grown graphene on SiC studied by Raman and FTIR spectroscopy
M Auge, B Hähnlein, M Eckstein, G Woltersdorf, J Pezoldt
Materials Science Forum 897, 727-730, 2017
ข้อกำหนด: German Research Foundation
Nanostructuring of graphene on semi-insulating SiC
B Hähnlein, M Breiter, T Stauden, J Pezoldt
Materials Science Forum 897, 735-738, 2017
ข้อกำหนด: German Research Foundation
Corona assisted Ga based nanowire growth on 3C-SiC (111)/Si (111) pseudosubstrates
J Reiprich, T Stauden, T Berthold, M Himmerlich, J Pezoldt, HO Jacobs
Materials Science Forum 897, 642-645, 2017
ข้อกำหนด: German Research Foundation
2H-AlGaN/GaN HEMTs on 3C-SiC (111)/Si (111) Substrates
K Tonisch, W Jatal, R Granzner, M Kittler, U Baumann, F Schwierz, ...
Materials Science Forum 645, 1219-1222, 2010
ข้อกำหนด: German Research Foundation
แหล่งที่มาและข้อมูลกองทุนดำเนินการโดยโปรแกรมคอมพิวเตอร์โดยอัตโนมัติ