| Bound exciton and donor–acceptor pair recombinations in ZnO BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ... physica status solidi (b) 241 (2), 231-260, 2004 | 2028 | 2004 |
| Optical properties of the nitrogen acceptor in epitaxial ZnO A Zeuner, H Alves, DM Hofmann, BK Meyer, A Hoffmann, U Haboeck, ... physica status solidi (b) 234 (3), R7-R9, 2002 | 198 | 2002 |
| Excited-state carrier lifetime in single-walled carbon nanotubes S Reich, M Dworzak, A Hoffmann, C Thomsen, MS Strano Physical Review B—Condensed Matter and Materials Physics 71 (3), 033402, 2005 | 129 | 2005 |
| Magneto-optical properties of bound excitons in ZnO AV Rodina, M Strassburg, M Dworzak, U Haboeck, A Hoffmann, A Zeuner, ... Physical Review B 69 (12), 125206, 2004 | 97 | 2004 |
| Recombination dynamics of localized excitons in InGaN quantum dots T Bartel, M Dworzak, M Strassburg, A Hoffmann, A Strittmatter, D Bimberg Applied physics letters 85 (11), 1946-1948, 2004 | 81 | 2004 |
| Lateral redistribution of excitons in CdSe/ZnSe quantum dots M Strassburg, M Dworzak, H Born, R Heitz, A Hoffmann, M Bartels, ... Applied physics letters 80 (3), 473-475, 2002 | 71 | 2002 |
| Identification of bound exciton complexes in ZnO M Strassburg, A Rodina, M Dworzak, U Haboeck, IL Krestnikov, ... physica status solidi (b) 241 (3), 607-611, 2004 | 55 | 2004 |
| Reconciliation of luminescence and Hall measurements on the ternary semiconductor CuGaSe2 S Siebentritt, I Beckers, T Riemann, J Christen, A Hoffmann, M Dworzak Applied Physics Letters 86 (9), 2005 | 44 | 2005 |
| Lateral carrier transfer in quantum dot layers S Rodt, V Türck, R Heitz, F Guffarth, R Engelhardt, UW Pohl, M Straßburg, ... Physical Review B 67 (23), 235327, 2003 | 31 | 2003 |
| Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells L Geelhaar, M Galluppi, G Jaschke, R Averbeck, H Riechert, T Remmele, ... Applied physics letters 88 (1), 2006 | 28 | 2006 |
| Luminescence and Raman spectroscopy on MgB2 PM Rafailov, M Dworzak, C Thomsen Solid state communications 122 (7-8), 455-458, 2002 | 24 | 2002 |
| Analysis of quantum dot formation and exciton localisation in the (Zn, Cd)(S, Se) system M Strassburg, J Christen, M Dworzak, R Heitz, A Hoffmann, M Bartels, ... physica status solidi (b) 229 (1), 529-532, 2002 | 8 | 2002 |
| Optical properties of InGaN quantum dots M Dworzak, T Bartel, M Straßburg, IL Krestnikov, A Hoffmann, R Seguin, ... Superlattices and Microstructures 36 (4-6), 763-772, 2004 | 6 | 2004 |
| Luminescence efficiency of InGaN/GaN quantum wells on bulk GaN substrate M Dworzak, T Stempel, A Hoffmann, G Franssen, S Grzanka, T Suski, ... MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 892, 825, 2006 | 5 | 2006 |
| Redistribution of localised excitons in CdSe/ZnSe quantum dot structures M Strassburg, M Dworzak, R Heitz, A Hoffmann, J Christen, D Schikora Materials Science and Engineering: B 88 (2-3), 302-306, 2002 | 5 | 2002 |
| Optical properties of InGaN/GaN quantum wells on sapphire and bulk GaN substrate M Dworzak, T Stempel, A Hoffmann, G Franssen, S Grzanka, T Suski, ... physica status solidi c 3 (6), 2078-2081, 2006 | 4 | 2006 |
| Resonant Gain in ZnSe Structures with Stacked CdSe Islands Grown in Stranski‐Krastanov Mode M Strassburg, M Dworzak, A Hoffmann, R Heitz, UW Pohl, D Bimberg, ... physica status solidi (a) 180 (1), 281-285, 2000 | 4 | 2000 |
| Relaxationsmechanismen in optisch angeregten ZnCdSe-Quantenpunktstrukturen M Dworzak Diplomarbeit, TU-Berlin, 2002 | 3 | 2002 |
| Gain mechanisms in field‐free InGaN layers grown on sapphire and bulk GaN substrate M Dworzak, T Stempel Pereira, M Bügler, A Hoffmann, G Franssen, ... physica status solidi (RRL)–Rapid Research Letters 1 (4), 141-143, 2007 | 2 | 2007 |
| Recombination dynamics in self‐assembled InP/GaP quantum dots under high pressure C Kristukat, M Dworzak, AR Gonñi, P Zimmer, F Hatami, S Dressler, ... physica status solidi (b) 241 (14), 3263-3268, 2004 | 2 | 2004 |
