| Bound exciton and donor–acceptor pair recombinations in ZnO BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ... physica status solidi (b) 241 (2), 231-260, 2004 | 2028 | 2004 |
| Ultranarrow luminescence lines from single quantum dots M Grundmann, J Christen, NN Ledentsov, J Böhrer, D Bimberg, ... Physical Review Letters 74 (20), 4043, 1995 | 1001 | 1995 |
| Heterointerfaces in quantum wells and epitaxial growth processes: Evaluation by luminescence techniques MA Herman, D Bimberg, J Christen Journal of Applied Physics 70 (2), R1-R52, 1991 | 399 | 1991 |
| Line shapes of intersubband and excitonic recombination in quantum wells: Influence of final-state interaction, statistical broadening, and momentum conservation J Christen, D Bimberg Physical Review B 42 (11), 7213, 1990 | 233 | 1990 |
| Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy T Gruber, C Kirchner, R Kling, F Reuss, A Waag, F Bertram, D Forster, ... Applied Physics Letters 83 (16), 3290-3292, 2003 | 225 | 2003 |
| MOVPE growth of GaN on Si (1 1 1) substrates A Dadgar, M Poschenrieder, J Bläsing, O Contreras, F Bertram, ... Journal of Crystal Growth 248, 556-562, 2003 | 222 | 2003 |
| Scanning cathodoluminescence microscopy: A unique approach to atomic‐scale characterization of heterointerfaces and imaging of semiconductor inhomogeneities J Christen, M Grundmann, D Bimberg Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991 | 199 | 1991 |
| Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces D Bimberg, J Christen, T Fukunaga, H Nakashima, DE Mars, JN Miller Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987 | 192 | 1987 |
| Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction A Dadgar, F Schulze, M Wienecke, A Gadanecz, J Bläsing, P Veit, ... New Journal of Physics 9 (10), 389, 2007 | 180 | 2007 |
| Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro … F Bertram, T Riemann, J Christen, A Kaschner, A Hoffmann, C Thomsen, ... Applied Physics Letters 74 (3), 359-361, 1999 | 177 | 1999 |
| InAs/GaAs quantum dots radiative recombination from zero‐dimensional states M Grundmann, NN Ledentsov, R Heitz, L Eckey, J Christen, J Böhrer, ... physica status solidi (b) 188 (1), 249-258, 1995 | 177 | 1995 |
| Gallium gradients in Cu(In,Ga)Se2 thin‐film solar cells W Witte, D Abou‐Ras, K Albe, GH Bauer, F Bertram, C Boit, ... Progress in Photovoltaics: Research and Applications 23 (6), 717-733, 2015 | 175 | 2015 |
| Exciton freeze-out and thermally activated relaxation at local potential fluctuations in thick layers A Bell, S Srinivasan, C Plumlee, H Omiya, FA Ponce, J Christen, ... Journal of applied physics 95 (9), 4670-4674, 2004 | 163 | 2004 |
| Growth of blue GaN LED structures on 150-mm Si (1 1 1) A Dadgar, C Hums, A Diez, J Bläsing, A Krost Journal of Crystal Growth 297 (2), 279-282, 2006 | 162 | 2006 |
| Optical investigations of AlGaN on GaN epitaxial films G Steude, T Christmann, BK Meyer, A Goeldner, A Hoffmann, F Bertram, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1999 | 156 | 1999 |
| Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range C Hums, J Bläsing, A Dadgar, A Diez, T Hempel, J Christen, A Krost, ... Applied Physics Letters 90 (2), 2007 | 153 | 2007 |
| Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si O Contreras, FA Ponce, J Christen, A Dadgar, A Krost Applied physics letters 81 (25), 4712-4714, 2002 | 150 | 2002 |
| Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V‐grooved substrates M Walther, E Kapon, J Christen, DM Hwang, R Bhat Applied physics letters 60 (5), 521-523, 1992 | 150 | 1992 |
| Self-organization processes in MBE-grown quantum dot structures D Bimberg, M Grundmann, NN Ledentsov, SS Ruvimov, P Werner, ... Thin Solid Films 267 (1-2), 32-36, 1995 | 147 | 1995 |
| Localization induced electron‐hole transition rate enhancement in GaAs quantum wells J Christen, D Bimberg, A Steckenborn, G Weimann Applied physics letters 44 (1), 84-86, 1984 | 136 | 1984 |
Armin Dadgarapl. Prof.ยืนยันอีเมลแล้วที่ ovgu.de