| GaN based power technology stimulates revolution in conversion electronics T McDonald, V President Electronics in Motion and Conversion, 2-4, 2009 | 45 | 2009 |
| Integrated Group III-V Power Stage MA Briere, T McDonald US Patent App. 13/975,695, 2014 | 41 | 2014 |
| Stacked composite device including a group III-V transistor and a group IV lateral transistor T McDonald, MA Briere US Patent 8,987,833, 2015 | 25 | 2015 |
| Power MOSFET avalanche design guidelines T McDonald, M Soldano, A Murray, T Avram International rectifier Application Note, AN-1005, 2000 | 23 | 2000 |
| HV GaN reliability and status SG Khalil, S Hardikar, S Sack, E Persson, M Imam, T McDonald 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2015 | 18 | 2015 |
| GaN-on-Silicon-Based Power Switch in Sintered, Dual-Side Cooled Package HS Lee, T McDonald, L Marlino PowerElectronics. com, Jan 2, 5, 2013 | 17 | 2013 |
| Stacked composite device including a group III-V transistor and a group IV vertical transistor T McDonald, MA Briere US Patent 9,343,440, 2016 | 16 | 2016 |
| GaN in a Silicon world: competition or coexistence? T McDonald, E Persson, A Bricconic, F Grawert 2016 IEEE Applied Power Electronics Conference and Exposition (APEC), 2016 | 16 | 2016 |
| IEEE ITRW working group position paper-system integration and application: Gallium nitride: Identifying and addressing challenges to realize the full potential of GaN in power … M Guz, D Sanderlin, BH Sin, M de Rooij, T McDonald, P Le, A Young, ... IEEE Power Electronics Magazine 5 (2), 34-39, 2018 | 13 | 2018 |
| New power MOSFET technology with extreme ruggedness and ultra-low RDS (on) qualified to Q101 for automotive applications A Murray, H Davis, J Cao, K Spring, T McDonald Proceedings of PCIM 2000 Europe, Power Conversion, 103-107, 2000 | 13 | 2000 |
| Evaluating the reliability of power MOSFETs C Blake, T McDonald, D Kinzer, J Cao, A Kwan, A Arzumanyan Power Electronics Technology 31 (11), 40, 2005 | 12 | 2005 |
| Progress and current topics of JEDEC JC-70.1 power GaN device quality and reliability standards activity: Or: What is the avalanche capability of your GaN transistor? T McDonald, SW Butler 2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021 | 10 | 2021 |
| Reliability and qualification of CoolGaN T McDonald Infineon White Paper 10-2018, 2018 | 10 | 2018 |
| Group III-V and group IV composite switch MA Briere, T McDonald US Patent 9,362,267, 2016 | 10 | 2016 |
| State of demonstrated HV GaN reliability and further requirements T McDonald, S Sack, D Veereddy, Y Pan, H Kim, H Kannan, M Imam IEEE Applied Power Electronics Conference and Exposition (APEC), Charlotte, NC, 2015 | 9 | 2015 |
| Reverse bias lifetime reliability assessments of HV GaN power device D Veereddy, SG Khalil, H Kannan, A Dip, H Kim, Z Wang, M Crandell, ... 2017 IEEE International Reliability Physics Symposium (IRPS), 3B-1.1-3B-1.6, 2017 | 8 | 2017 |
| Evaluation of power MOSFET thermal solutions for desktop and mobile processor power T McDonald, J Ambrus International Rectifier, 2002 | 8 | 2002 |
| Group III-V and Group IV Composite Diode MA Bríere, T McDonald US Patent App. 13/781,080, 2013 | 7 | 2013 |
| GaN based power conversion: moving on! T McDonald IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, 2013 | 7 | 2013 |
| Stacked Composite Device Including a Group III-V Transistor and a Group IV Diode T McDonald, MA Briere US Patent App. 13/434,524, 2012 | 6 | 2012 |
