| White light emitting diodes realized by using an active packaging method with CdSe/ZnSquantum dots dispersed in photosensitive epoxy resins H Wang, KS Lee, JH Ryu, CH Hong, YH Cho Nanotechnology 19 (14), 145202, 2008 | 88 | 2008 |
| Spatial correlation between optical properties and defect formation in GaN thin films laterally overgrown on cone-shaped patterned sapphire substrates KS Lee, HS Kwack, JS Hwang, TM Roh, YH Cho, JH Lee, YC Kim, ... Journal of Applied Physics 107 (10), 2010 | 44 | 2010 |
| Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition D Min, D Park, J Jang, K Lee, O Nam Scientific Reports 5 (1), 17372, 2015 | 21 | 2015 |
| Self-assembled growth of inclined GaN nanorods on (10− 10) m-plane sapphire using metal–organic chemical vapor deposition S Chae, K Lee, J Jang, D Min, J Kim, O Nam Journal of crystal growth 409, 65-70, 2015 | 17 | 2015 |
| Influence of defect reduction and strain relaxation on carrier dynamics in InGaN-based light-emitting diodes on cone-shaped patterned sapphire substrates KS Lee, I Isnaeni, YS Yoo, JH Lee, YC Kim, YH Cho Journal of Applied Physics 113 (17), 2013 | 16 | 2013 |
| Active packaging method for light-emitting diode lamps with photosensitive epoxy resins H Wang, KS Lee, JH Ryu, CH Hong, YH Cho IEEE Photonics Technology Letters 20 (2), 87-89, 2008 | 16 | 2008 |
| Defect reduction of SiNx embedded m-plane GaN grown by hydride vapor phase epitaxy S Woo, M Kim, B So, G Yoo, J Jang, K Lee, O Nam Journal of crystal growth 407, 6-10, 2014 | 13 | 2014 |
| Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device J Kim, D Min, J Jang, K Lee, S Chae, O Nam Journal of Applied Physics 116 (16), 2014 | 11 | 2014 |
| Fabrication of sharp-needled conical polymer tip on the cross-section of optical fiber via two-photon polymerization for tuning-fork-based atomic force microscopy BJ Jung, HJ Kong, YH Cho, KS Lee, CH Park, DY Yang, KS Lee Optics Communications 286, 197-203, 2013 | 11 | 2013 |
| Active packing method for blue light-emitting diodes with photosensitive polymerization: formation of self-focusing encapsulates H Wang, JH Ryu, KS Lee, CH Tan, L Jin, S Li, CH Hong, YH Cho, S Liu Optics Express 16 (6), 3680-3685, 2008 | 11 | 2008 |
| Colour-crafted phosphor-free white light emitters via in-situ nanostructure engineering D Min, D Park, K Lee, O Nam Scientific Reports 7 (1), 44148, 2017 | 8 | 2017 |
| Fabrication of CdSe–ZnS nanocrystal-based local fluorescent aperture probes by active polymerization of photosensitive epoxy H Wang, KS Lee, S Li, L Jin, SK Lee, Y Wu, YH Cho, J Cai Optics communications 281 (6), 1588-1592, 2008 | 8 | 2008 |
| Inclined angle-controlled growth of GaN nanorods on m-sapphire by metal organic chemical vapor deposition without a catalyst K Lee, S Chae, J Jang, D Min, J Kim, D Eom, YS Yoo, YH Cho, O Nam Nanotechnology 26 (33), 335601, 2015 | 7 | 2015 |
| Growth of Semipolar InGaN Quantum Well Structure Using Self-Organized Nano-Masks on m-Sapphire Y Ryu, J Jeong, J Jang, K Lee, D Min, J Kim, M Kim, S Moon, G Yoo, ... Journal of Nanoscience and Nanotechnology 13 (9), 6429-6433, 2013 | 5 | 2013 |
| Functionalized inclined-GaN based nanoneedles KH Kim, K Lee, H Hong, D Yang, WH Ryu, O Nam, YC Kim Journal of industrial and engineering chemistry 59, 184-191, 2018 | 4 | 2018 |
| Comparison between the relaxation mechanisms of thick (0001) polar and semipolar InGaN layers J Kim, D Min, J Jang, K Lee, S Chae, O Nam Japanese Journal of Applied Physics 54 (2S), 02BA02, 2014 | 3 | 2014 |
| Optical Transitions from Two-Dimensional Electron Gas Formed at an Undoped AlGaN/GaN Single Heterojunction HS KWACK, YH CHO, SB BAE, KS LEE, JH Lee New Physics: Sae Mulli 53 (5), 412-417, 2006 | 3 | 2006 |
| Carrier dynamics of optical emission from two‐dimensional electron gas in undoped AlGaN/GaN single heterojunctions HS Kwack, YH Cho, GH Kim, MR Park, DH Youn, SB Bae, KS Lee, JH Lee, ... physica status solidi c 3 (6), 2109-2112, 2006 | 3 | 2006 |
| Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition K Lee, S Chae, J Jang, D Min, J Kim, O Nam AIP Advances 6 (4), 2016 | 2 | 2016 |
| Characterization of a-plane InGaN light-emitting diodes with a SiNx interlayer grown on a patterned sapphire substrate by metal–organic chemical vapor deposition G Yoo, D Min, K Lee, J Jang, S Moon, S Chae, J Kim, O Nam Japanese Journal of Applied Physics 53 (11), 111001, 2014 | 2 | 2014 |
Jae-Hoon LeeSamsung Electronicsยืนยันอีเมลแล้วที่ samsung.com