| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1254 | 2018 |
| Au-free AlGaN/GaN power diode on 8-in Si substrate with gated edge termination S Lenci, B De Jaeger, L Carbonell, J Hu, G Mannaert, D Wellekens, S You, ... IEEE Electron Device Letters 34 (8), 1035-1037, 2013 | 181 | 2013 |
| Vertical GaN junction barrier Schottky rectifiers by selective ion implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 179 | 2017 |
| Materials and processing issues in vertical GaN power electronics J Hu, Y Zhang, M Sun, D Piedra, N Chowdhury, T Palacios Materials Science in Semiconductor Processing 78, 75-84, 2018 | 164 | 2018 |
| 1200 V GaN vertical fin power field-effect transistors Y Zhang, M Sun, D Piedra, J Hu, Z Liu, Y Lin, X Gao, K Shepard, ... 2017 IEEE International Electron Devices Meeting (IEDM), 9.2. 1-9.2. 4, 2017 | 122 | 2017 |
| Trench formation and corner rounding in vertical GaN power devices Y Zhang, M Sun, Z Liu, D Piedra, J Hu, X Gao, T Palacios Applied Physics Letters 110 (19), 2017 | 120 | 2017 |
| Performance optimization of Au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate J Hu, S Stoffels, S Lenci, B Bakeroot, B De Jaeger, M Van Hove, N Ronchi, ... IEEE Transactions on Electron Devices 63 (3), 997-1004, 2016 | 86 | 2016 |
| On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors B Bakeroot, S You, TL Wu, J Hu, M Van Hove, B De Jaeger, K Geens, ... Journal of Applied Physics 116 (13), 2014 | 78 | 2014 |
| Current transient spectroscopy for trapping analysis on Au-free AlGaN/GaN Schottky barrier diode J Hu, S Stoffels, S Lenci, B Bakeroot, R Venegas, G Groeseneken, ... Applied physics letters 106 (8), 2015 | 46 | 2015 |
| Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination J Hu, S Stoffels, S Lenci, B De Jaeger, N Ronchi, AN Tallarico, ... IEEE Transactions on Electron Devices 63 (9), 3451-3458, 2016 | 45 | 2016 |
| Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests J Hu, S Stoffels, M Zhao, AN Tallarico, I Rossetto, M Meneghini, X Kang, ... IEEE Electron Device Letters 38 (3), 371-374, 2017 | 41 | 2017 |
| On the identification of buffer trapping for bias-dependent dynamic RON of AlGaN/GaN Schottky barrier diode with AlGaN: C back barrier J Hu, S Stoffels, S Lenci, G Groeseneken, S Decoutere IEEE electron device letters 37 (3), 310-313, 2016 | 41 | 2016 |
| Solvothermal synthesis and characterization of zinc indium sulfide microspheres W Cai, Y Zhao, J Hu, J Zhong, W Xiang Journal of Materials Science & Technology 27 (6), 559-562, 2011 | 39 | 2011 |
| Synthesis and characterization of nanoplate-based SnS microflowers via a simple solvothermal process with biomolecule assistance W Cai, J Hu, Y Zhao, H Yang, J Wang, W Xiang Advanced Powder Technology 23 (6), 850-854, 2012 | 37 | 2012 |
| Leakage‐current reduction and improved on‐state performance of Au‐free AlGaN/GaN‐on‐Si Schottky diode by embedding the edge terminations in the anode region J Hu, S Lenci, S Stoffels, BD Jaeger, G Groeseneken, S Decoutere Physica status solidi (c) 11 (3‐4), 862-865, 2014 | 35 | 2014 |
| A simple and controllable hydrothermal route for the synthesis of monodispersed cube-like barium titanate nanocrystals W Cai, T Rao, A Wang, J Hu, J Wang, J Zhong, W Xiang Ceramics International 41 (3), 4514-4522, 2015 | 26 | 2015 |
| Biomolecule-assisted synthesis of Ag3SbS3 nanorods J Zhong, J Hu, W Cai, F Yang, L Liu, H Liu, X Yang, X Liang, W Xiang Journal of Alloys and Compounds 501 (1), L15-L19, 2010 | 23 | 2010 |
| Physical origin of current collapse in Au-free AlGaN/GaN Schottky barrier diodes J Hu, S Stoffels, S Lenci, N Ronchi, R Venegas, S You, B Bakeroot, ... Microelectronics Reliability 54 (9-10), 2196-2199, 2014 | 22 | 2014 |
| Preparation and luminescent properties of GdOF: Ce, Tb nanoparticles and their transparent PMMA nanocomposites W Cai, A Wang, L Fu, J Hu, T Rao, J Wang, J Zhong, W Xiang Optical Materials 43, 36-41, 2015 | 21 | 2015 |
| Reliability of Au-free AlGaN/GaN-on-silicon Schottky barrier diodes under ON-state stress AN Tallarico, S Stoffels, P Magnone, J Hu, S Lenci, D Marcon, E Sangiorgi, ... IEEE Transactions on Electron Devices 63 (2), 723-730, 2016 | 16 | 2016 |
Tian-Li Wu 吳添立National Yang Ming Chiao Tung University; NYCU WLabยืนยันอีเมลแล้วที่ nycu.edu.tw
