บทความที่มีข้อกำหนดการเข้าถึงสาธารณะ - Yong Xie (ORCID: 0000-0001-7904-664X)ดูข้อมูลเพิ่มเติม
ไม่มีให้ใช้งานในทุกที่: 12
NaCl-assisted one-step growth of MoS2–WS2 in-plane heterostructures
Z Wang, Y Xie, H Wang, R Wu, T Nan, Y Zhan, J Sun, T Jiang, Y Zhao, ...
Nanotechnology 28 (32), 325602, 2017
ข้อกำหนด: National Natural Science Foundation of China
2H/1T′ phase WS2 (1− x) Te2x alloys grown by chemical vapor deposition with tunable band structures
Z Wang, J Sun, H Wang, Y Lei, Y Xie, G Wang, Y Zhao, X Li, H Xu, X Yang, ...
Applied Surface Science 504, 144371, 2020
ข้อกำหนด: National Natural Science Foundation of China
Frequency tuning of two-dimensional nanoelectromechanical resonators via comb-drive mems actuators
Y Xie, J Lee, H Jia, PXL Feng
2019 20th International Conference on Solid-State Sensors, Actuators and …, 2019
ข้อกำหนด: US National Science Foundation, National Natural Science Foundation of China
Comparative study on interface and bulk charges in AlGaN/GaN metal–insulator–semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
JJ Zhu, XH Ma, WW Chen, B Hou, Y Xie, Y Hao
Japanese Journal of Applied Physics 55 (5S), 05FH01, 2015
ข้อกำหนด: National Natural Science Foundation of China
A self-sustained frequency comb oscillator via tapping mode comb-drive resonator integrated with a feedback ASIC
R Wei, J Lee, T Mei, Y Xie, MS Islam, S Mandal, PXL Feng
2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems …, 2019
ข้อกำหนด: US National Science Foundation
Experimental study on an evaporation process to deposit MoO2 microflakes
Y Guo, Q Zhao, Y Zhan, X Xu, Y Xie
Chemical Physics Letters 687, 14-18, 2017
ข้อกำหนด: National Natural Science Foundation of China
Sonication-polished anodic TiO2 nanotube array-based photoanode for efficient solar energy conversion
K Gu, P Zhong, M Guo, J Ma, Q Jiang, S Zhang, X Zhou, Y Xie, X Ma, ...
Journal of Solid State Electrochemistry 20, 3337-3348, 2016
ข้อกำหนด: National Natural Science Foundation of China
Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors
B Hou, XH Ma, WW Chen, JJ Zhu, SL Zhao, YH Chen, Y Xie, JC Zhang, ...
Applied Physics Letters 107 (16), 2015
ข้อกำหนด: National Natural Science Foundation of China
Vertically molybdenum disulfide nanosheets on carbon cloth using CVD by controlling growth atmosphere for electrocatalysis
H Wang, L Geng, Z Zhang, P Zhong, F Liu, Y Xie, Y Zhao, P Li, X Ma
Nanotechnology 34 (37), 375601, 2023
ข้อกำหนด: National Natural Science Foundation of China
Straining of atomically thin WSe2 crystals: Suppressing slippage by thermal annealing
W Hu, Y Wang, K He, X He, Y Bai, C Liu, N Zhou, H Wang, P Li, X Ma, ...
Journal of Applied Physics 132 (8), 2022
ข้อกำหนด: National Natural Science Foundation of China
1-phototransistor-1-threshold switching optoelectronic neuron for in-sensor compression via spiking neuron network
R Wang, F Li, D Li, C Wang, Y Tang, G Liu, S Wang, Y Xie, M Sawan, ...
2023 International electron devices meeting (IEDM), 1-4, 2023
ข้อกำหนด: National Natural Science Foundation of China
High-frequency hexagonal boron nitride (h-BN) phononic waveguides
Y Wang, J Lee, Y Xie, XQ Zheng, PXL Feng
2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems …, 2019
ข้อกำหนด: US National Science Foundation
มีให้ใช้งานในบางที่: 38
Thickness-induced structural phase transformation of layered gallium telluride
Q Zhao, T Wang, Y Miao, F Ma, Y Xie, X Ma, Y Gu, J Li, J He, B Chen, S Xi, ...
Physical Chemistry Chemical Physics 18 (28), 18719-18726, 2016
ข้อกำหนด: National Natural Science Foundation of China
Recent progress in synthesis of two-dimensional hexagonal boron nitride
H Wang, Y Zhao, Y Xie, X Ma, X Zhang
Journal of Semiconductors 38 (3), 031003, 2017
ข้อกำหนด: National Natural Science Foundation of China
Improved interface and transport properties of AlGaN/GaN MIS-HEMTs with PEALD-grown AlN gate dielectric
JJ Zhu, XH Ma, Y Xie, B Hou, WW Chen, JC Zhang, Y Hao
IEEE Transactions on Electron Devices 62 (2), 512-518, 2014
ข้อกำหนด: National Natural Science Foundation of China
Hexagonal boron nitride phononic crystal waveguides
Y Wang, J Lee, XQ Zheng, Y Xie, PXL Feng
ACS Photonics 6 (12), 3225-3232, 2019
ข้อกำหนด: US National Science Foundation
The Electronic Properties of O-Doped Pure and Sulfur Vacancy-Defect Monolayer WS2: A First-Principles Study
W Wang, L Bai, C Yang, K Fan, Y Xie, M Li
Materials 11 (2), 218, 2018
ข้อกำหนด: National Natural Science Foundation of China
Dissolvable and biodegradable resistive switching memory based on magnesium oxide
S Wu, H Wang, J Sun, F Song, Z Wang, M Yang, H Xi, Y Xie, H Gao, J Ma, ...
IEEE Electron Device Letters 37 (8), 990-993, 2016
ข้อกำหนด: National Natural Science Foundation of China
Combining freestanding ferroelectric perovskite oxides with two-dimensional semiconductors for high performance transistors
S Puebla, T Pucher, V Rouco, G Sanchez-Santolino, Y Xie, V Zamora, ...
Nano Letters 22 (18), 7457-7466, 2022
ข้อกำหนด: National Natural Science Foundation of China, European Commission …
High-quality GaSe single crystal grown by the Bridgman method
T Wang, J Li, Q Zhao, Z Yin, Y Zhang, B Chen, Y Xie, W Jie
Materials 11 (2), 186, 2018
ข้อกำหนด: National Natural Science Foundation of China
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