| Quantum confined Stark effect due to built-in internal polarization fields in (Al, Ga)N/GaN quantum wells with thickness control at monolayer scale M Leroux, N Grandjean, M Laugt, J Massies, B Gil, P Lefebvre, ... Physical Review-Section B-Condensed Matter 58 (20), R13371, 1998 | 484 | 1998 |
| Simple analytical method for calculating exciton binding energies in semiconductor quantum wells H Mathieu, P Lefebvre, P Christol Physical Review B 46 (7), 4092, 1992 | 397 | 1992 |
| High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy P Lefebvre, A Morel, M Gallart, T Taliercio, J Allègre, B Gil, H Mathieu, ... Applied Physics Letters 78 (9), 1252-1254, 2001 | 315 | 2001 |
| Barrier-width dependence of group-III nitrides quantum-well transition energies M Leroux, N Grandjean, J Massies, B Gil, P Lefebvre, P Bigenwald Physical Review-Section B-Condensed Matter 60 (3), 1496-1499, 1999 | 266 | 1999 |
| Influence of electron-phonon interaction on the optical properties of III nitride semiconductors XB Zhang, T Taliercio, S Kolliakos, P Lefebvre Journal of Physics: Condensed Matter 13 (32), 7053, 2001 | 254 | 2001 |
| Internal electric field in wurtzite ZnO/Zn0. 78Mg0. 22O quantum wells C Morhain, T Bretagnon, P Lefebvre, X Tang, P Valvin, T Guillet, B Gil, ... Physical Review-Section B-Condensed Matter 72 (24), 241305R, 2005 | 248 | 2005 |
| Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl) N quantum wells P Lefebvre, J Allegre, B Gil, H Mathieu, N Grandjean, M Leroux, J Massies, ... Physical Review-Section B-Condensed Matter 59 (23), 15363-15367, 1999 | 199 | 1999 |
| Radiative lifetime of a single electron-hole pair in GaN ∕ AlN quantum dots T Bretagnon, P Lefebvre, P Valvin, R Bardoux, T Guillet, T Taliercio, B Gil, ... Physical Review B 73 (11), 113304, 2006 | 150 | 2006 |
| Donor-acceptor-like behavior of electron-hole pair recombinations in low-dimensional (Ga, In) N/GaN systems A Morel, P Lefebvre, S Kalliakos, T Taliercio, T Bretagnon, B Gil Physical Review-Section B-Condensed Matter 68 (4), 45331-45400, 2003 | 126 | 2003 |
| Recombination dynamics of free and localized excitons in G a N/G a 0.93 Al 0.07 N quantum wells P Lefebvre, J Allègre, B Gil, A Kavokine, H Mathieu, W Kim, A Salvador, ... Physical Review B 57 (16), R9447, 1998 | 126 | 1998 |
| Effects of finite spin-orbit splitting on optical properties of spherical semiconductor quantum dots T Richard, P Lefebvre, H Mathieu, J Allégre Physical Review B 53 (11), 7287, 1996 | 107 | 1996 |
| Unified formulation of excitonic absorption spectra of semiconductor quantum wells, superlattices, and quantum wires P Lefebvre, P Christol, H Mathieu Physical Review B 48 (23), 17308, 1993 | 106 | 1993 |
| Fractional‐dimensional calculation of exciton binding energies in semiconductor quantum wells and quantum‐well wires P Christol, P Lefebvre, H Mathieu Journal of applied physics 74 (9), 5626-5637, 1993 | 106 | 1993 |
| Micro epitaxial lateral overgrowth of GaN/sapphire by metal organic vapour phase epitaxy E Frayssinet, B Beaumont, JP Faurie, P Gibart, Z Makkai, B Pécz, ... Materials Research Society Internet Journal of Nitride Semiconductor Research 7, 2002 | 102 | 2002 |
| Band offsets and lattice-mismatch effects in strained-layer CdTe/ZnTe superlattices H Mathieu, J Allègre, A Chatt, P Lefebvre, JP Faurie Physical Review B 38 (11), 7740, 1988 | 101 | 1988 |
| Exchange effects on excitons in quantum wells Y Chen, B Gil, P Lefebvre, H Mathieu Physical Review B 37 (11), 6429, 1988 | 98 | 1988 |
| Barrier composition dependence of the internal electric field in ZnO∕ Zn1− xMgxO quantum wells T Bretagnon, P Lefebvre, T Guillet, T Taliercio, B Gil, C Morhain Applied physics letters 90 (20), 2007 | 96 | 2007 |
| Quantum confinement effects of CdS nanocrystals in a sodium borosilicate glass prepared by the sol‐gel process H Mathieu, T Richard, J Allègre, P Lefebvre, G Arnaud, W Granier, ... Journal of applied physics 77 (1), 287-293, 1995 | 96 | 1995 |
| Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy P Corfdir, P Lefebvre, J Levrat, A Dussaigne, JD Ganière, D Martin, ... Journal of Applied Physics 105 (4), 043102-043102-7, 2009 | 94 | 2009 |
| Confined Excitons in GaN–AlGaN Quantum Wells P Bigenwald, P Lefebvre, T Bretagnon, B Gil physica status solidi (b) 216 (1), 371-374, 1999 | 91 | 1999 |
Bernard GILCNRS university Montpellierยืนยันอีเมลแล้วที่ umontpellier.fr