บทความที่มีข้อกำหนดการเข้าถึงสาธารณะ - Martin Fenebergดูข้อมูลเพิ่มเติม
ไม่มีให้ใช้งานในทุกที่: 22
Band gap of corundumlike determined by absorption and ellipsometry
A Segura, L Artús, R Cuscó, R Goldhahn, M Feneberg
Physical Review Materials 1 (2), 024604, 2017
ข้อกำหนด: Government of Spain
Many-electron effects on the dielectric function of cubic : Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift
M Feneberg, J Nixdorf, C Lidig, R Goldhahn, Z Galazka, O Bierwagen, ...
Physical Review B 93 (4), 045203, 2016
ข้อกำหนด: German Research Foundation
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
C Reich, M Guttmann, M Feneberg, T Wernicke, F Mehnke, C Kuhn, ...
Applied Physics Letters 107 (14), 2015
ข้อกำหนด: German Research Foundation
Photoluminescence, cathodoluminescence, and reflectance study of AlN layers and AlN single crystals
GM Prinz, A Ladenburger, M Feneberg, M Schirra, SB Thapa, ...
Superlattices and Microstructures 40 (4-6), 513-518, 2006
ข้อกำหนด: German Research Foundation
Anisotropy of effective electron masses in highly doped nonpolar GaN
M Feneberg, K Lange, C Lidig, M Wieneke, H Witte, J Bläsing, A Dadgar, ...
Applied Physics Letters 103 (23), 2013
ข้อกำหนด: German Research Foundation
Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering
RAR Leute, M Feneberg, R Sauer, K Thonke, SB Thapa, F Scholz, ...
Applied Physics Letters 95 (3), 2009
ข้อกำหนด: German Research Foundation
GaN-based light-emitting diodes on selectively grown semipolar crystal facets
F Scholz, T Wunderer, B Neubert, M Feneberg, K Thonke
MRS bulletin 34 (5), 328-333, 2009
ข้อกำหนด: German Research Foundation
Properties of blue and green InGaN/GaN quantum well emission on structured semipolar surfaces
T Wunderer, F Lipski, S Schwaiger, J Hertkorn, M Wiedenmann, ...
Japanese journal of applied physics 48 (6R), 060201, 2009
ข้อกำหนด: German Research Foundation
Time-and locally resolved photoluminescence of semipolar GaInN∕ GaN facet light emitting diodes
T Wunderer, P Brückner, J Hertkorn, F Scholz, GJ Beirne, M Jetter, ...
Applied physics letters 90 (17), 2007
ข้อกำหนด: German Research Foundation
Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods
D Weissenberger, D Gerthsen, A Reiser, GM Prinz, M Feneberg, ...
Applied Physics Letters 94 (4), 2009
ข้อกำหนด: German Research Foundation
Anisotropic phonon properties and effective electron mass in α-Ga2O3
M Feneberg, J Bläsing, T Sekiyama, K Ota, K Akaiwa, K Ichino, ...
Applied Physics Letters 114 (14), 2019
ข้อกำหนด: German Research Foundation
Lattice vibrations and optical properties of α-Ga2O3 films grown by halide vapor phase epitaxy
P Ning, J Grümbel, J Bläsing, R Goldhahn, DW Jeon, M Feneberg
Semiconductor Science and Technology 35 (9), 095001, 2020
ข้อกำหนด: German Research Foundation
Enhanced light extraction efficiency of UV LEDs by encapsulation with UV-transparent silicone resin
S Wu, M Guttmann, N Lobo-Ploch, F Gindele, N Susilo, A Knauer, T Kolbe, ...
Semiconductor Science and Technology 37 (6), 065019, 2022
ข้อกำหนด: Federal Ministry of Education and Research, Germany
Temperature dependent dielectric function and reflectivity spectra of nonpolar wurtzite AlN
M Feneberg, MF Romero, B Neuschl, K Thonke, M Röppischer, C Cobet, ...
Thin Solid Films 571, 502-505, 2014
ข้อกำหนด: German Research Foundation
Optical properties of defects in nitride semiconductors
I Tischer, M Hocker, B Neuschl, M Madel, M Feneberg, M Schirra, M Frey, ...
Journal of Materials Research 30 (20), 2977-2990, 2015
ข้อกำหนด: Austrian Science Fund, German Research Foundation
Impact of AlN spacer on metal–semiconductor–metal Pt–InAlGaN/GaN heterostructures for ultraviolet detection
T Brazzini, S Pandey, MF Romero, PY Bokov, M Feneberg, G Tabares, ...
Japanese Journal of Applied Physics 52 (8S), 08JK04, 2013
ข้อกำหนด: Government of Spain
Regular silicon pillars and dichroic filters produced via particle-imprinted membranes
A Ladenburger, A Reiser, J Konle, M Feneberg, R Sauer, K Thonke, ...
Journal of applied physics 101 (3), 2007
ข้อกำหนด: German Research Foundation
Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures
A Minj, MF Romero, Y Wang, Ö Tuna, M Feneberg, R Goldhahn, ...
Applied Physics Letters 109 (22), 2016
ข้อกำหนด: Government of Spain
Optical properties and band structure of highly doped gallium nitride
R Goldhahn, K Lange, M Feneberg
Gallium Nitride Materials and Devices X 9363, 26-33, 2015
ข้อกำหนด: German Research Foundation
Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different In content
MF Romero, M Feneberg, P Moser, C Berger, J Bläsing, A Dadgar, ...
Japanese Journal of Applied Physics 52 (8S), 08JK02, 2013
ข้อกำหนด: Government of Spain
แหล่งที่มาและข้อมูลกองทุนดำเนินการโดยโปรแกรมคอมพิวเตอร์โดยอัตโนมัติ