| RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs S Cho, KR Kim, BG Park, IM Kang IEEE Transactions on Electron Devices 58 (5), 1388-1396, 2011 | 212 | 2011 |
| The analysis of dark signals in the CMOS APS imagers from the characterization of test structures HI Kwon, IM Kang, BG Park, JD Lee, SS Park IEEE Transactions on Electron Devices 51 (2), 178-184, 2004 | 151 | 2004 |
| Analyses on small-signal parameters and radio-frequency modeling of gate-all-around tunneling field-effect transistors S Cho, JS Lee, KR Kim, BG Park, JS Harris, IM Kang IEEE transactions on electron devices 58 (12), 4164-4171, 2011 | 106 | 2011 |
| Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs IM Kang, H Shin IEEE transactions on nanotechnology 5 (3), 205-210, 2006 | 95 | 2006 |
| AlGaN/GaN FinFET with extremely broad transconductance by side-wall wet etch YW Jo, DH Son, CH Won, KS Im, JH Seo, IM Kang, JH Lee IEEE Electron Device Letters 36 (10), 1008-1010, 2015 | 84 | 2015 |
| Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system MH Kim, HL Park, MH Kim, J Jang, JH Bae, IM Kang, SH Lee npj Flexible Electronics 5 (1), 34, 2021 | 65 | 2021 |
| Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation S Cho, I Man Kang, TI Kamins, BG Park, JS Harris Applied Physics Letters 99 (24), 2011 | 53 | 2011 |
| Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors JS Lee, JH Seo, S Cho, JH Lee, SW Kang, JH Bae, ES Cho, IM Kang Current Applied Physics 13 (6), 1143-1149, 2013 | 49 | 2013 |
| Five-step (pad–pad short–pad open–short–open) de-embedding method and its verification IM Kang, SJ Jung, TH Choi, JH Jung, C Chung, HS Kim, H Oh, HW Lee, ... IEEE Electron Device Letters 30 (4), 398-400, 2009 | 48 | 2009 |
| Low voltage operation of GaN vertical nanowire MOSFET DH Son, YW Jo, JH Seo, CH Won, KS Im, YS Lee, HS Jang, DH Kim, ... Solid-State Electronics 145, 1-7, 2018 | 42 | 2018 |
| Fabrication and characterization of a thin-body poly-Si 1T DRAM with charge-trap effect JH Seo, YJ Yoon, E Yu, W Sun, H Shin, IM Kang, JH Lee, S Cho IEEE Electron Device Letters 40 (4), 566-569, 2019 | 40 | 2019 |
| Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced–Characteristic for Switching Applications JH Seo, YW Jo, YJ Yoon, DH Son, CH Won, HS Jang, IM Kang, JH Lee IEEE Electron Device Letters 37 (7), 855-858, 2016 | 35 | 2016 |
| Suppression of current collapse in AlGaN/GaN MISHFET with carbon‐doped GaN/undoped GaN multi‐layered buffer structure HS Kang, CH Won, YJ Kim, DS Kim, YJ Yoon, IM Kang, YS Lee, JH Lee physica status solidi (a) 212 (5), 1116-1121, 2015 | 34 | 2015 |
| TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs YJ Yoon, JH Seo, MS Cho, HS Kang, CH Won, IM Kang, JH Lee Solid-State Electronics 124, 54-57, 2016 | 33 | 2016 |
| Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET) JH Seo, YJ Yoon, S Lee, JH Lee, S Cho, IM Kang Current Applied Physics 15 (3), 208-212, 2015 | 33 | 2015 |
| Organic memristor‐based flexible neural networks with bio‐realistic synaptic plasticity for complex combinatorial optimization H Kim, M Kim, A Lee, HL Park, J Jang, JH Bae, IM Kang, ES Kim, SH Lee Advanced Science 10 (19), 2300659, 2023 | 32 | 2023 |
| Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors C Lee, WY Lee, H Lee, S Ha, JH Bae, IM Kang, H Kang, K Kim, J Jang Electronics 9 (2), 254, 2020 | 32 | 2020 |
| A polycrystalline-silicon dual-gate MOSFET-based 1T-DRAM using grain boundary-induced variable resistance YJ Yoon, JH Seo, S Cho, JH Lee, IM Kang Applied Physics Letters 114 (18), 2019 | 32 | 2019 |
| Separate extraction of gate resistance components in RF MOSFETs M Kang, IM Kang, YH Jung, H Shin IEEE transactions on electron devices 54 (6), 1459-1463, 2007 | 32 | 2007 |
| Capacitorless one-transistor dynamic random access memory based on double-gate GaAs junctionless transistor YJ Yoon, JH Seo, MS Cho, BG Kim, SH Lee, IM Kang Japanese Journal of Applied Physics 56 (6S1), 06GF01, 2017 | 31 | 2017 |
