| Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN/GaN heterostructures O Ambacher, J Smart, JR Shealy, NG Weimann, K Chu, M Murphy, ... Journal of applied physics 85 (6), 3222-3233, 1999 | 3798 | 1999 |
| Growth and applications of group III-nitrides O Ambacher Journal of physics D: Applied physics 31 (20), 2653, 1998 | 2184 | 1998 |
| Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures O Ambacher, B Foutz, J Smart, JR Shealy, NG Weimann, K Chu, ... Journal of applied physics 87 (1), 334-344, 2000 | 2183 | 2000 |
| Wireless sub-THz communication system with high data rate S Koenig, D Lopez-Diaz, J Antes, F Boes, R Henneberger, A Leuther, ... Nature photonics 7 (12), 977-981, 2013 | 1631 | 2013 |
| Pyroelectric properties ofAl (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002 | 1437 | 2002 |
| Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures V Fiorentini, F Bernardini, O Ambacher Applied physics letters 80 (7), 1204-1206, 2002 | 1058 | 2002 |
| Optical constants of epitaxial AlGaN films and their temperature dependence D Brunner, H Angerer, E Bustarret, F Freudenberg, R Höpler, R Dimitrov, ... Journal of applied physics 82 (10), 5090-5096, 1997 | 809 | 1997 |
| Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry T Metzger, R Höpler, E Born, O Ambacher, M Stutzmann, R Stömmer, ... Philosophical magazine A 77 (4), 1013-1025, 1998 | 672 | 1998 |
| Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral PDC King, TD Veal, F Fuchs, CY Wang, DJ Payne, A Bourlange, H Zhang, ... Physical Review B—Condensed Matter and Materials Physics 79 (20), 205211, 2009 | 546 | 2009 |
| Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications V Cimalla, J Pezoldt, O Ambacher Journal of Physics D: Applied Physics 40 (20), S19, 2007 | 493 | 2007 |
| Undoped AlGaN/GaN HEMTs for microwave power amplification LF Eastman, V Tilak, J Smart, BM Green, EM Chumbes, R Dimitrov, H Kim, ... IEEE Transactions on Electron Devices 48 (3), 479-485, 2001 | 475 | 2001 |
| Determination of the Al mole fraction and the band gap bowing of epitaxial films H Angerer, D Brunner, F Freudenberg, O Ambacher, M Stutzmann, ... Applied Physics Letters 71 (11), 1504-1506, 1997 | 432 | 1997 |
| Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff MKKMK Kelly, RPVRP Vaudo, VMPVM Phanse, LGL Görgens, ... Japanese journal of applied physics 38 (3A), L217, 1999 | 422 | 1999 |
| Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996 | 387 | 1996 |
| Sound velocity of thin films obtained by surface acoustic-wave measurements C Deger, E Born, H Angerer, O Ambacher, M Stutzmann, J Hornsteiner, ... Applied Physics Letters 72 (19), 2400-2402, 1998 | 373 | 1998 |
| Effects of solvent and annealing on the improved performance of solar cells based on poly (3-hexylthiophene): fullerene M Al-Ibrahim, O Ambacher, S Sensfuss, G Gobsch Applied Physics Letters 86 (20), 2005 | 369 | 2005 |
| Relation between absorption and crystallinity of poly (3-hexylthiophene)/fullerene films for plastic solar cells U Zhokhavets, T Erb, G Gobsch, M Al-Ibrahim, O Ambacher Chemical Physics Letters 418 (4-6), 347-350, 2006 | 292 | 2006 |
| Playing with polarity M Stutzmann, O Ambacher, M Eickhoff, U Karrer, A Lima Pimenta, ... physica status solidi (b) 228 (2), 505-512, 2001 | 292 | 2001 |
| Influence of substrate‐induced biaxial compressive stress on the optical properties of thin GaN films W Rieger, T Metzger, H Angerer, R Dimitrov, O Ambacher, M Stutzmann Applied physics letters 68 (7), 970-972, 1996 | 285 | 1996 |
| Gas sensitive GaN/AlGaN-heterostructures J Schalwig, G Müller, M Eickhoff, O Ambacher, M Stutzmann Sensors and Actuators B: Chemical 87 (3), 425-430, 2002 | 277 | 2002 |
Martin StutzmannProfessor (retired) of Experimental Physics, Walter Schottky Institut, TU Münchenยืนยันอีเมลแล้วที่ tum.de
