| Atomic origins of the high catalytic activity of nanoporous gold T Fujita, P Guan, K McKenna, X Lang, A Hirata, L Zhang, T Tokunaga, ... Nature materials 11 (9), 775-780, 2012 | 985 | 2012 |
| Metal oxide resistive memory switching mechanism based on conductive filament properties G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ... Journal of Applied Physics 110 (12), 124518-124518-12, 2011 | 568 | 2011 |
| Atom-resolved imaging of ordered defect superstructures at individual grain boundaries Z Wang, M Saito, KP McKenna, L Gu, S Tsukimoto, AL Shluger, Y Ikuhara Nature 479 (7373), 380-383, 2011 | 267 | 2011 |
| The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2 K McKenna, A Shluger Applied Physics Letters 95 (22), 222111-222111-3, 2009 | 240 | 2009 |
| Metal oxide RRAM switching mechanism based on conductive filament microscopic properties G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ... Electron Devices Meeting (IEDM), 2010 IEEE International, 19.6. 1-19.6. 4, 2010 | 169 | 2010 |
| Atomic-scale structure and properties of highly stable antiphase boundary defects in Fe3O4 KP McKenna, F Hofer, D Gilks, VK Lazarov, C Chen, Z Wang, Y Ikuhara Nature communications 5 (1), 5740, 2014 | 164 | 2014 |
| Electron-trapping polycrystalline materials with negative electron affinity KP McKenna, AL Shluger Nature materials 7 (11), 859-862, 2008 | 159 | 2008 |
| Grain boundary mediated leakage current in polycrystalline HfO2 films K McKenna, A Shluger, V Iglesias, M Porti, M Nafria, M Lanza, G Bersuker Microelectronic Engineering 88 (7), 1272-1275, 2011 | 141 | 2011 |
| Atomic-Scale structure and local chemistry of COFeB–MgO magnetic tunnel junctions Z Wang, M Saito, KP McKenna, S Fukami, H Sato, S Ikeda, H Ohno, ... Nano letters 16 (3), 1530-1536, 2016 | 129 | 2016 |
| Grain boundary-driven leakage path formation in HfO2 dielectrics G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ... Solid-State Electronics 65, 146-150, 2011 | 118 | 2011 |
| First-principles calculations of defects near a grain boundary in MgO KP McKenna, AL Shluger Physical Review B 79 (22), 224116, 2009 | 117 | 2009 |
| Polymorphism of dislocation core structures at the atomic scale Z Wang, M Saito, KP McKenna, Y Ikuhara Nature communications 5 (1), 3239, 2014 | 108 | 2014 |
| First-Principles Modeling of Polaron Formation in TiO2 Polymorphs AR Elmaslmane, MB Watkins, KP McKenna Journal of chemical theory and computation 14 (7), 3740-3751, 2018 | 102 | 2018 |
| Origin of differences in the excess volume of copper and nickel grain boundaries JJ Bean, KP McKenna Acta Materialia 110, 246-257, 2016 | 92 | 2016 |
| Forming‐free grain boundary engineered hafnium oxide resistive random access memory devices S Petzold, A Zintler, R Eilhardt, E Piros, N Kaiser, SU Sharath, T Vogel, ... Advanced Electronic Materials 5 (10), 1900484, 2019 | 87 | 2019 |
| Two-Dimensional Polaronic Behavior in the Binary Oxides m-HfO2 and m-ZrO2 KP McKenna, MJ Wolf, AL Shluger, S Lany, A Zunger Physical Review Letters 108 (11), 116403, 2012 | 81 | 2012 |
| Evidence for Self-healing Benign Grain Boundaries and a Highly Defective Sb2Se3–CdS Interfacial Layer in Sb2Se3 Thin-Film Photovoltaics RE Williams, QM Ramasse, KP McKenna, LJ Phillips, PJ Yates, OS Hutter, ... ACS applied materials & interfaces 12 (19), 21730-21738, 2020 | 73 | 2020 |
| Inside powders: A theoretical model of interfaces between MgO nanocrystallites KP McKenna, PV Sushko, AL Shluger Journal of the American Chemical Society 129 (27), 8600-8608, 2007 | 70 | 2007 |
| Modelling of electron and hole trapping in oxides AL Shluger, KP McKenna, PV Sushko, DM Ramo, AV Kimmel Modelling and Simulation in Materials Science and Engineering 17 (8), 084004, 2009 | 69 | 2009 |
| Origin of the asymmetry in the magnitude of the statistical variability of n-and p-channel poly-Si gate bulk MOSFETs A Asenov, A Cathignol, B Cheng, KP McKenna, AR Brown, AL Shluger, ... Electron Device Letters, IEEE 29 (8), 913-915, 2008 | 69 | 2008 |
