บทความที่มีข้อกำหนดการเข้าถึงสาธารณะ - Yuh-Renn Wuดูข้อมูลเพิ่มเติม
ไม่มีให้ใช้งานในทุกที่: 7
Graphene/SnS2 van der Waals Photodetector with High Photoresponsivity and High Photodetectivity for Broadband 365–2240 nm Detection
Y Zhao, TY Tsai, G Wu, C Ó Coileáin, YF Zhao, D Zhang, KM Hung, ...
ACS applied materials & interfaces 13 (39), 47198-47207, 2021
ข้อกำหนด: National Natural Science Foundation of China
Enhancing the hole-injection efficiency of a light-emitting diode by increasing Mg doping in the p-AlGaN electron-blocking layer
CY Su, CG Tu, WH Liu, CH Lin, YF Yao, HT Chen, YR Wu, YW Kiang, ...
IEEE Transactions on Electron Devices 64 (8), 3226-3233, 2017
ข้อกำหนด: US Department of Defense
Revealing the mechanism of carrier transport in host-guest systems of organic materials with a modified Poisson and drift-diffusion solver
JY Huang, JH Lee, YR Wu, TY Chen, YC Chiu, JJ Huang, M Leung, ...
Physical Review Materials 4 (12), 125602, 2020
ข้อกำหนด: European Commission
Robust Anti-Ambipolar Behavior and Gate-Tunable Rectifying Effect in van der Waals p–n Junctions
Y Lv, CY Wu, Y Zhao, G Wu, M Abid, J Cho, M Choi, C Ó Coileáin, ...
ACS Applied Electronic Materials 4 (11), 5487-5497, 2022
ข้อกำหนด: National Natural Science Foundation of China
Analysis of Light‐Emission Polarization Ratio in Deep‐Ultraviolet Light‐Emitting Diodes by Considering Random Alloy Fluctuations with the 3D k· p Method
HT Shen, YC Chang, YR Wu
physica status solidi (RRL)–Rapid Research Letters 16 (2), 2100498, 2022
ข้อกำหนด: Agence Nationale de la Recherche
Modeling dislocation-related reverse bias leakage in GaN p–n diodes
KS Qwah, CA Robertson, YR Wu, JS Speck
Semiconductor Science and Technology 36 (7), 075001, 2021
ข้อกำหนด: US National Science Foundation, US Department of Energy
Defect-assisted hole transport through transition metal oxide-based injection layers for passivated nanocrystalline CsPbBr3 emissive thin films: A combined experimental and …
P Akhtar, HC Hung, HS Devi, YR Wu, M Singh
Journal of Applied Physics 135 (5), 2024
ข้อกำหนด: Department of Science & Technology, India
มีให้ใช้งานในบางที่: 33
The 2020 UV emitter roadmap
H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ...
Journal of Physics D: Applied Physics 53 (50), 503001, 2020
ข้อกำหนด: US National Science Foundation, US Department of Energy, German Research …
Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
CK Li, M Piccardo, LS Lu, S Mayboroda, L Martinelli, J Peretti, JS Speck, ...
Physical Review B 95 (14), 144206, 2017
ข้อกำหนด: US National Science Foundation, US Department of Energy
Localization landscape theory of disorder in semiconductors. I. Theory and modeling
M Filoche, M Piccardo, YR Wu, CK Li, C Weisbuch, S Mayboroda
Physical Review B 95 (14), 144204, 2017
ข้อกำหนด: US National Science Foundation, US Department of Energy
Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers
M Piccardo, CK Li, YR Wu, JS Speck, B Bonef, RM Farrell, M Filoche, ...
Physical Review B 95 (14), 144205, 2017
ข้อกำหนด: US Department of Energy, US Department of Defense
Giant gauge factor of Van der Waals material based strain sensors
W Yan, HR Fuh, Y Lv, KQ Chen, TY Tsai, YR Wu, TH Shieh, KM Hung, J Li, ...
Nature communications 12 (1), 2018, 2021
ข้อกำหนด: US Department of Veterans Affairs, National Natural Science Foundation of China
Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy
DA Browne, B Mazumder, YR Wu, JS Speck
Journal of Applied Physics 117 (18), 2015
ข้อกำหนด: US Department of Energy
The micro-LED roadmap: status quo and prospects
CC Lin, YR Wu, HC Kuo, MS Wong, SP DenBaars, S Nakamura, ...
Journal of Physics: Photonics 5 (4), 042502, 2023
ข้อกำหนด: National Natural Science Foundation of China
Efficient vertical charge transport in polycrystalline halide perovskites revealed by four-dimensional tracking of charge carriers
C Cho, S Feldmann, KM Yeom, YW Jang, S Kahmann, JY Huang, ...
Nature Materials 21 (12), 1388-1395, 2022
ข้อกำหนด: UK Engineering and Physical Sciences Research Council, European Commission
Disorder effects in nitride semiconductors: impact on fundamental and device properties
C Weisbuch, S Nakamura, YR Wu, JS Speck
Nanophotonics 10 (1), 3-21, 2020
ข้อกำหนด: US National Science Foundation, US Department of Energy
Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
W Hahn, JM Lentali, P Polovodov, N Young, S Nakamura, JS Speck, ...
Physical Review B 98 (4), 045305, 2018
ข้อกำหนด: US Department of Energy
Barriers to carrier transport in multiple quantum well nitride-based -plane green light emitting diodes
C Lynsky, AI Alhassan, G Lheureux, B Bonef, SP DenBaars, S Nakamura, ...
Physical Review Materials 4 (5), 054604, 2020
ข้อกำหนด: US National Science Foundation, US Department of Energy
Interwell carrier transport in InGaN/(In) GaN multiple quantum wells
S Marcinkevičius, R Yapparov, LY Kuritzky, YR Wu, S Nakamura, ...
Applied Physics Letters 114 (15), 2019
ข้อกำหนด: US Department of Energy
Efficiency and forward voltage of blue and green lateral LEDs with V-shaped defects and random alloy fluctuation in quantum wells
CH Ho, JS Speck, C Weisbuch, YR Wu
Physical Review Applied 17 (1), 014033, 2022
ข้อกำหนด: US National Science Foundation, US Department of Energy, Agence Nationale de …
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