| A new approximation of Fermi-Dirac integrals of order 1/2 for degenerate semiconductor devices A AlQurashi, CR Selvakumar Superlattices and Microstructures 118, 308-318, 2018 | 14 | 2018 |
| Quantitative analysis of semiconductor electrode voltammetry: A theoretical and operational framework for semiconductor ultramicroelectrodes M Lancaster, A AlQurashi, CR Selvakumar, S Maldonado The Journal of Physical Chemistry C 124 (9), 5021-5035, 2020 | 8 | 2020 |
| Physical modeling of asymmetric spacers resonant tunneling diodes (RTDs) A Alqurashi, M Missous 2021 IEEE Latin America Electron Devices Conference (LAEDC), 1-4, 2021 | 4 | 2021 |
| A New Approximation of Fermi-Dirac Integrals of Order 1/2 by Prony’s Method and Its Applications in Semiconductor Devices A AlQurashi University of Waterloo, 2017 | 3 | 2017 |
| New accurate approximation of the Einstein Relation for heavily-doped semiconductor devices A AlQurashi, CR Selvakumar Solid-State Electronics 172, 107869, 2020 | 1 | 2020 |
| Development of 100 GHz resonant tunnelling diodes based oscillator A Alqurashi, J Sexton, M Missous 2022 IEEE Latin America Electron Devices Conference (LAEDC), 2022 | | 2022 |
| Advanced tunneling diodes for high-frequency applications and wireless communication systems A Alqurashi PQDT-UK & Ireland, 2022 | | 2022 |
| InGaAs/AlAs Asymmetric Spacers RTDs for THz Imaging Applications A Alqurashi, M Missous Semiconductor and Integrated OptoElectronics (SIOE) Conference, 2021 | | 2021 |
| A new approximation of Fermi-Dirac integrals of order 1/2 for degenerate semiconductor devices (vol 118, pg 308, 2018) A AlQurashi, CR Selvakumar SUPERLATTICES AND MICROSTRUCTURES 145, 2020 | | 2020 |
| Corrigendum to" A new approximation of Fermi-Dirac integrals of order 1/2 for degenerate semiconductor devices"[Superlattice. Microst.(2018) 308-318] A AlQurashi, CR Selvakumar Superlattices and Microstructures 145, 106607, 2020 | | 2020 |
Mohamed MissousProfessor of Semiconductor Materials and Devicesยืนยันอีเมลแล้วที่ manchester.ac.uk