| A capacitorless 1T-DRAM on SOI based on dynamic coupling and double-gate operation M Bawedin, S Cristoloveanu, D Flandre IEEE Electron Device Letters 29 (7), 795-798, 2008 | 219 | 2008 |
| High-performance GaN-based nanochannel FinFETs with/without AlGaN/GaN heterostructure KS Im, CH Won, YW Jo, JH Lee, M Bawedin, S Cristoloveanu, JH Lee IEEE Transactions on Electron Devices 60 (10), 3012-3018, 2013 | 130 | 2013 |
| A review of electrical characterization techniques for ultrathin FDSOI materials and devices S Cristoloveanu, M Bawedin, I Ionica Solid-State Electronics 117, 10-36, 2016 | 65 | 2016 |
| A new memory effect (MSD) in fully depleted SOI MOSFETs M Bawedin, S Cristoloveanu, JG Yun, D Flandre Solid-State Electronics 49 (9), 1547-1555, 2005 | 61 | 2005 |
| LDMOS in SOI technology with very-thin silicon film M Bawedin, C Renaux, D Flandre Solid-state electronics 48 (12), 2263-2270, 2004 | 61 | 2004 |
| A review of the Z2-FET 1T-DRAM memory: Operation mechanisms and key parameters S Cristoloveanu, KH Lee, MS Parihar, H El Dirani, J Lacord, S Martinie, ... Solid-State Electronics 143, 10-19, 2018 | 60 | 2018 |
| Innovating SOI memory devices based on floating-body effects M Bawedin, S Cristoloveanu, D Flandre Solid-State Electronics 51 (10), 1252-1262, 2007 | 49 | 2007 |
| Extended Analysis of the -FET: Operation as Capacitorless eDRAM C Navarro, J Lacord, MS Parihar, F Adamu-Lema, M Duan, N Rodriguez, ... IEEE Transactions on Electron Devices 64 (11), 4486-4491, 2017 | 46 | 2017 |
| Characteristics of GaN and AlGaN/GaN FinFETs KS Im, HS Kang, JH Lee, SJ Chang, S Cristoloveanu, M Bawedin, JH Lee Solid-state electronics 97, 66-75, 2014 | 43 | 2014 |
| Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors C Navarro, M Bawedin, F Andrieu, B Sagnes, F Martinez, S Cristoloveanu Journal of Applied Physics 118 (18), 2015 | 39 | 2015 |
| Floating-body SOI memory: Concepts, physics and challenges M Bawedin, S Cristoloveanu, D Flandre, F Udrea ECS Transactions 19 (4), 243, 2009 | 39 | 2009 |
| -FET as Capacitor-Less eDRAM Cell For High-Density Integration C Navarro, M Duan, MS Parihar, F Adamu-Lema, S Coseman, J Lacord, ... IEEE Transactions on Electron Devices 64 (12), 4904-4909, 2017 | 35 | 2017 |
| Evidence of supercoupling effect in ultrathin silicon layers using a four-gate MOSFET S Cristoloveanu, S Athanasiou, M Bawedin, P Galy IEEE Electron Device Letters 38 (2), 157-159, 2016 | 33 | 2016 |
| Experimental Demonstration of Operational Z2-FET Memory Matrix S Navarro, C Navarro, C Marquez, H El Dirani, P Galy, M Bawedin, ... IEEE Electron Device Letters 39 (5), 660-663, 2018 | 32 | 2018 |
| Interface coupled photodetector (ICPD) with high photoresponsivity based on silicon-on-insulator substrate (SOI) J Deng, J Shao, B Lu, Y Chen, A Zaslavsky, S Cristoloveanu, M Bawedin, ... IEEE Journal of the Electron Devices Society 6, 557-564, 2018 | 32 | 2018 |
| Thin film fully-depleted SOI four-gate transistors K Akarvardar, S Cristoloveanu, M Bawedin, P Gentil, BJ Blalock, ... Solid-State Electronics 51 (2), 278-284, 2007 | 32 | 2007 |
| Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications M Bawedin, S Cristoloveanu, D Flandre, F Udrea Solid-state electronics 54 (2), 104-114, 2010 | 30 | 2010 |
| Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET DH Son, YW Jo, V Sindhuri, KS Im, JH Seo, YT Kim, IM Kang, ... Microelectronic Engineering 147, 155-158, 2015 | 27 | 2015 |
| Mobility investigation by geometrical magnetoresistance in fully depleted MOSFETs and FinFETs SJ Chang, M Bawedin, S Cristoloveanu IEEE Transactions on Electron Devices 61 (6), 1979-1986, 2014 | 25 | 2014 |
| Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs A Hubert, M Bawedin, S Cristoloveanu, T Ernst Solid-state electronics 53 (12), 1280-1286, 2009 | 25 | 2009 |
Cristoloveanu, SorinGrenoble INPยืนยันอีเมลแล้วที่ grenoble-inp.fr