บทความที่มีข้อกำหนดการเข้าถึงสาธารณะ - Connie H Liดูข้อมูลเพิ่มเติม
ไม่มีให้ใช้งานในทุกที่: 5
Charging effect at grain boundaries of MoS2
C Yan, X Dong, CH Li, L Li
Nanotechnology 29 (19), 195704, 2018
ข้อกำหนด: US National Science Foundation
Spin-Sensitive Epitaxial In2Se3 Tunnel Barrier in In2Se3/Bi2Se3 Topological van der Waals Heterostructure
CH Li, J Moon, OMJ van ‘t Erve, D Wickramaratne, ED Cobas, ...
ACS Applied Materials & Interfaces 14 (29), 34093-34100, 2022
ข้อกำหนด: US Department of Defense
Highly Efficient Spin–Orbit Torque Switching in Bi2Se3/Fe3GeTe2 van der Waals Heterostructures
M Lohmann, D Wickramaratne, J Moon, M Noyan, HJ Chuang, BT Jonker, ...
ACS nano 18 (1), 680-690, 2023
ข้อกำหนด: US Department of Defense
Magnetic Field-Induced Spin Nematic Phase Up to Room Temperature in Epitaxial Antiferromagnetic FeTe Thin Films Grown by Molecular Beam Epitaxy
J Moon, Q Zou, H Zhang, OMJ van ‘t Erve, NG Combs, L Li, CH Li
ACS nano 17 (17), 16886-16894, 2023
ข้อกำหนด: US Department of Energy, US Department of Defense
Room-Temperature Oxygen Transport in Nanothin BixOySez Enables Precision Modulation of 2D Materials
Z Hennighausen, BM Hudak, M Phillips, J Moon, KM McCreary, ...
ACS nano 16 (9), 13969-13981, 2022
ข้อกำหนด: US Department of Defense
มีให้ใช้งานในบางที่: 10
Electrical Characterization of Discrete Defects and Impact of Defect Density on Photoluminescence in Monolayer WS2
MR Rosenberger, HJ Chuang, KM McCreary, CH Li, BT Jonker
ACS nano 12 (2), 1793-1800, 2018
ข้อกำหนด: US Department of Defense
Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states
CH Li, OMJ van ‘t Erve, S Rajput, L Li, BT Jonker
Nature Communications 7 (1), 13518, 2016
ข้อกำหนด: US Department of Energy
Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions
D Tomer, S Rajput, LJ Hudy, CH Li, L Li
Nanotechnology 26 (21), 215702, 2015
ข้อกำหนด: US Department of Energy
Carrier transport in reverse-biased graphene/semiconductor Schottky junctions
D Tomer, S Rajput, LJ Hudy, CH Li, L Li
Applied physics letters 106 (17), 2015
ข้อกำหนด: US Department of Energy
Electrical Detection of the Helical Spin Texture in a p-type Topological Insulator Sb2Te3
CH Li, OMJ van ‘t Erve, YY Li, L Li, BT Jonker
Scientific reports 6 (1), 29533, 2016
ข้อกำหนด: US National Science Foundation
Thermal annealing and magnetic anisotropy of NiFe thin films on n+-Si for spintronic device applications
QH Lu, R Huang, LS Wang, ZG Wu, C Li, Q Luo, SY Zuo, J Li, DL Peng, ...
Journal of Magnetism and Magnetic Materials 394, 253-259, 2015
ข้อกำหนด: National Natural Science Foundation of China
Electrical Detection of Charge-to-spin and Spin-to-Charge Conversion in a Topological Insulator Bi2Te3 Using BN/Al2O3 Hybrid Tunnel Barrier
CH Li, OMJ van ‘t Erve, C Yan, L Li, BT Jonker
Scientific reports 8 (1), 10265, 2018
ข้อกำหนด: US Department of Energy
Reply to:“On the understanding of current-induced spin polarization of three-dimensional topological insulators”
CH Li, OMJ van ‘t Erve, S Rajput, L Li, BT Jonker
Nature communications 10 (1), 2523, 2019
ข้อกำหนด: US National Science Foundation, US Department of Energy, US Department of …
Interlayer Exciton–Phonon Bound State in Bi2Se3/Monolayer WS2 van der Waals Heterostructures
Z Hennighausen, J Moon, KM McCreary, CH Li, OMJ van’t Erve, ...
ACS nano 17 (3), 2529-2536, 2023
ข้อกำหนด: US Department of Defense
Electrical detection of current generated spin in topological insulator surface states: Role of interface resistance
CH Li, OMJ van ‘t Erve, C Yan, L Li, BT Jonker
Scientific Reports 9 (1), 6906, 2019
ข้อกำหนด: US Department of Energy, US Department of Defense
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