บทความที่มีข้อกำหนดการเข้าถึงสาธารณะ - Mohit Raghuwanshiดูข้อมูลเพิ่มเติม
ไม่มีให้ใช้งานในทุกที่: 3
Role of elemental intermixing at the In2S3/CIGSe heterojunction deposited using reactive RF magnetron sputtering
P Soni, M Raghuwanshi, R Wuerz, B Berghoff, J Knoch, D Raabe, ...
Solar Energy Materials and Solar Cells 195, 367-375, 2019
ข้อกำหนด: Federal Ministry of Education and Research, Germany
Palladium adjoined gold split-ring resonators: A prospective nanoplasmonic hydrogen sensor
GVP Kumar, M Raghuwanshi
Optics Communications 300, 65-68, 2013
ข้อกำหนด: Department of Science & Technology, India
Correlative APT/EBIC/EBSD show grain boundaries with different traits have different composition
M Raghuwanshi, J Keutgen, R Wuerz, O Cojocaru-Mirédin
2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 2727-2729, 2020
ข้อกำหนด: Federal Ministry of Education and Research, Germany
มีให้ใช้งานในบางที่: 18
Heavy Alkali Treatment of Cu(In,Ga)Se2 Solar Cells: Surface versus Bulk Effects
S Siebentritt, E Avancini, M Bär, J Bombsch, E Bourgeois, S Buecheler, ...
Advanced Energy Materials 10 (8), 1903752, 2020
ข้อกำหนด: European Commission
Metavalent bonding in crystalline solids: how does it collapse?
L Guarneri, S Jakobs, A von Hoegen, S Maier, M Xu, M Zhu, S Wahl, ...
Advanced Materials 33 (39), 2102356, 2021
ข้อกำหนด: National Fund for Scientific Research, Belgium, European Commission
Rubidium distribution at atomic scale in high efficient Cu (In, Ga) Se2 thin-film solar cells
A Vilalta-Clemente, M Raghuwanshi, S Duguay, C Castro, E Cadel, ...
Applied Physics Letters 112 (10), 2018
ข้อกำหนด: European Commission
Influence of RbF post deposition treatment on heterojunction and grain boundaries in high efficient (21.1%) Cu (In, Ga) Se2 solar cells
M Raghuwanshi, A Vilalta-Clemente, C Castro, S Duguay, E Cadel, ...
Nano Energy 60, 103-110, 2019
ข้อกำหนด: European Commission
Doping by design: enhanced thermoelectric performance of GeSe alloys through metavalent bonding
Y Yu, C Zhou, T Ghosh, CF Schön, Y Zhou, S Wahl, M Raghuwanshi, ...
Advanced Materials 35 (19), 2300893, 2023
ข้อกำหนด: German Research Foundation, State of Califonia
Grain Boundaries in Cu(In, Ga)Se2: A Review of Composition–Electronic Property Relationships by Atom Probe Tomography and Correlative Microscopy
O Cojocaru‐Mirédin, M Raghuwanshi, R Wuerz, S Sadewasser
Advanced Functional Materials 31 (41), 2103119, 2021
ข้อกำหนด: German Research Foundation, Fundação para a Ciência e a Tecnologia, Portugal …
Evidence of Enhanced Carrier Collection in Cu(In,Ga)Se2 Grain Boundaries: Correlation with Microstructure
M Raghuwanshi, B Thöner, P Soni, M Wuttig, R Wuerz, ...
ACS Applied Materials & Interfaces 10 (17), 14759-14766, 2018
ข้อกำหนด: Federal Ministry of Education and Research, Germany
Interconnection between Trait, Structure, and Composition of Grain Boundaries in Cu(In,Ga)Se2 Thin‐Film Solar Cells
M Raghuwanshi, R Wuerz, O Cojocaru‐Mirédin
Advanced Functional Materials 30 (31), 2001046, 2020
ข้อกำหนด: Federal Ministry of Education and Research, Germany
Sputtering as a viable route for In2S3 buffer layer deposition in high efficiency Cu(In,Ga)Se2 solar cells
P Soni, M Raghuwanshi, R Wuerz, B Berghoff, J Knoch, D Raabe, ...
Energy Science & Engineering 7 (2), 478-487, 2019
ข้อกำหนด: Federal Ministry of Education and Research, Germany
Scaling and confinement in ultrathin chalcogenide films as exemplified by gete
P Kerres, Y Zhou, H Vaishnav, M Raghuwanshi, J Wang, M Häser, ...
Small 18 (21), 2201753, 2022
ข้อกำหนด: German Research Foundation, Federal Ministry of Education and Research, Germany
Fingerprints Indicating Superior Properties of Internal Interfaces in Cu(In,Ga)Se2 Thin‐Film Solar Cells
M Raghuwanshi, M Chugh, G Sozzi, A Kanevce, TD Kühne, H Mirhosseini, ...
Advanced Materials 34 (37), 2203954, 2022
ข้อกำหนด: Federal Ministry of Education and Research, Germany
Propagation of light in serially coupled plasmonic nanowire dimer: Geometry dependence and polarization control
D Singh, M Raghuwanshi, GV Pavan Kumar
Applied Physics Letters 101 (11), 2012
ข้อกำหนด: Department of Science & Technology, India
Intense sulphurization process can lead to superior heterojunction properties in Cu (In, Ga)(S, Se) 2 thin-film solar cells
O Cojocaru-Mirédin, E Ghorbani, M Raghuwanshi, X Jin, D Pandav, ...
Nano Energy 89, 106375, 2021
ข้อกำหนด: Federal Ministry of Education and Research, Germany
Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
B Sundarapandian, DQ Tran, L Kirste, P Straňák, A Graff, M Prescher, ...
Applied Physics Letters 124 (18), 2024
ข้อกำหนด: Swedish Research Council, Vinnova, Sweden
Confinement‐Induced Phonon Softening and Hardening in Sb2Te3 Thin Films
J Mertens, P Kerres, Y Xu, M Raghuwanshi, D Kim, CF Schön, J Frank, ...
Advanced Functional Materials 34 (1), 2307681, 2024
ข้อกำหนด: German Research Foundation, Federal Ministry of Education and Research, Germany
Plasmonic nanowires arranged in Fibonacci number chain: Excitation angle-dependent optical properties
M Raghuwanshi, GV Kumar
AIP Advances 3 (2), 2013
ข้อกำหนด: Department of Science & Technology, India
The Physics of Twin Boundary Termination in Cu(In, Ga)Se2 Absorbers
M Raghuwanshi, J Keutgen, AM Mio, H Mirhosseini, TD Kühne, ...
Solar RRL 7 (7), 2201033, 2023
ข้อกำหนด: European Commission
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