บทความที่มีข้อกำหนดการเข้าถึงสาธารณะ - Kei May Lauดูข้อมูลเพิ่มเติม
ไม่มีให้ใช้งานในทุกที่: 42
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
H Jiang, C Liu, Y Chen, X Lu, CW Tang, KM Lau
IEEE Transactions on Electron Devices 64 (3), 832-839, 2017
ข้อกำหนด: Research Grants Council, Hong Kong
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNxas Gate Dielectric
X Lu, K Yu, H Jiang, A Zhang, KM Lau
IEEE Transactions on Electron Devices 64 (3), 824-831, 2017
ข้อกำหนด: National Natural Science Foundation of China, Research Grants Council, Hong Kong
1300 V normally-OFF p-GaN gate HEMTs on Si with high ON-state drain current
H Jiang, Q Lyu, R Zhu, P Xiang, K Cheng, KM Lau
IEEE Transactions on Electron Devices 68 (2), 653-657, 2020
ข้อกำหนด: Research Grants Council, Hong Kong
Design and characterization of active matrix LED microdisplays with embedded visible light communication transmitter
X Li, L Wu, Z Liu, B Hussain, WC Chong, KM Lau, CP Yue
Journal of Lightwave Technology 34 (14), 3449-3457, 2016
ข้อกำหนด: Research Grants Council, Hong Kong
Enhancement-Mode GaN MOS-HEMTs With Recess-Free Barrier Engineering and High- ZrO2 Gate Dielectric
H Jiang, CW Tang, KM Lau
IEEE Electron Device Letters 39 (3), 405-408, 2018
ข้อกำหนด: Research Grants Council, Hong Kong
High-voltage p-GaN HEMTs with off-state blocking capability after gate breakdown
H Jiang, R Zhu, Q Lyu, KM Lau
IEEE Electron Device Letters 40 (4), 530-533, 2019
ข้อกำหนด: Research Grants Council, Hong Kong
Voltage-controlled GaN HEMT-LED devices as fast-switching and dimmable light emitters
Y Cai, X Zou, C Liu, KM Lau
IEEE Electron Device Letters 39 (2), 224-227, 2017
ข้อกำหนด: Research Grants Council, Hong Kong
Fully-and quasi-vertical GaN-on-Si pin diodes: High performance and comprehensive comparison
X Zhang, X Zou, X Lu, CW Tang, KM Lau
IEEE Transactions on Electron Devices 64 (3), 809-815, 2017
ข้อกำหนด: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Chemical and biological assessment of Jujube (Ziziphus jujuba)-containing herbal decoctions: Induction of erythropoietin expression in cultures
CTW Lam, PH Chan, PSC Lee, KM Lau, AYY Kong, AGW Gong, ML Xu, ...
Journal of Chromatography B 1026, 254-262, 2016
ข้อกำหนด: Research Grants Council, Hong Kong
High-speed InGaAs photodetectors by selective-area MOCVD toward optoelectronic integrated circuits
Y Geng, S Feng, AWO Poon, KM Lau
IEEE Journal of Selected Topics in Quantum Electronics 20 (6), 36-42, 2014
ข้อกำหนด: Research Grants Council, Hong Kong
Danggui Buxue Tang, Chinese herbal decoction containing Astragali Radix and Angelicae Sinensis Radix, induces production of nitric oxide in endothelial cells: signaling …
AGW Gong, KM Lau, LML Zhang, HQ Lin, TTX Dong, KWK Tsim
Planta medica 82 (05), 418-423, 2016
ข้อกำหนด: Research Grants Council, Hong Kong
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2Gate Dielectric
H Jiang, C Liu, KW Ng, CW Tang, KM Lau
IEEE Transactions on Electron Devices 65 (12), 5337-5342, 2018
ข้อกำหนด: Research Grants Council, Hong Kong
The volatile oil of Nardostachyos Radix et Rhizoma inhibits the oxidative stress-induced cell injury via reactive oxygen species scavenging and Akt activation in H9c2 cardiomyocyte
M Maiwulanjiang, J Chen, G Xin, AGW Gong, A Miernisha, CYQ Du, ...
Journal of Ethnopharmacology 153 (2), 491-498, 2014
ข้อกำหนด: Research Grants Council, Hong Kong
The estrogenic properties of Danggui Buxue Tang, a Chinese herbal decoction, are triggered predominantly by calycosin in MCF-7 cells
AGW Gong, KM Lau, ML Xu, HQ Lin, TTX Dong, KYZ Zheng, KJ Zhao, ...
Journal of ethnopharmacology 189, 81-89, 2016
ข้อกำหนด: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Enhancing ON-and OFF-state performance of quasi-vertical GaN trench MOSFETs on sapphire with reduced interface charges and a thick bottom dielectric
R Zhu, H Jiang, CW Tang, KM Lau
IEEE Electron Device Letters 43 (3), 346-349, 2022
ข้อกำหนด: Research Grants Council, Hong Kong
A novel 700 V monolithically integrated Si-GaN cascoded field effect transistor
J Ren, CW Tang, H Feng, H Jiang, W Yang, X Zhou, KM Lau, JKO Sin
IEEE Electron Device Letters 39 (3), 394-396, 2018
ข้อกำหนด: Research Grants Council, Hong Kong
In situ growth of SiNx as gate dielectric and surface passivation for AlN/GaN heterostructures by metalorganic chemical vapor deposition
J Ma, X Lu, H Jiang, C Liu, KM Lau
Applied Physics Express 7 (9), 091002, 2014
ข้อกำหนด: Research Grants Council, Hong Kong
High performance monolithically integrated GaN driving VMOSFET on LED
X Lu, C Liu, H Jiang, X Zou, KM Lau
IEEE Electron Device Letters 38 (6), 752-755, 2017
ข้อกำหนด: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate
X Lu, C Liu, H Jiang, X Zou, A Zhang, KM Lau
Applied Physics Express 9 (3), 031001, 2016
ข้อกำหนด: National Natural Science Foundation of China, Research Grants Council, Hong Kong
Effects of p-GaN body doping concentration on the ON-state performance of vertical GaN trench MOSFETs
R Zhu, H Jiang, CW Tang, KM Lau
IEEE Electron Device Letters 42 (7), 970-973, 2021
ข้อกำหนด: Research Grants Council, Hong Kong
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